EE1411EE1411EECS141-S04EE141EE141--Spring 2004Spring 2004Digital Integrated Digital Integrated CircuitsCircuitsLecture 9Lecture 9CMOS scalingCMOS scalingIntroduction to wiresIntroduction to wiresEE1412EECS141-S04Administrative StuffAdministrative Stuff Office hours today: 4-5:30pm (511 Cory) Lab 4 this week – Mo lab to be made up next week Brian’s discussion session and OH this week: Discussion: We 10-11am in 353 Cory OH: 5-6pm in 353 Cory Homework #4 due 2/19 Midterm 1 is next Thursday,Febr 26, 6:30-8pm 277 Cory Review session Febr 25, 6-7:30pm TBD Material up to Lecture 9 (Scaling) – Ch 1, Ch2 (partial), Ch 3 (partial), Ch4 Open book, open notes No labs next week No new homework next week Past midterms posted on the webEE1413EECS141-S04Last LectureLast Lecture Last lecture Buffer sizing Power dissipation Today’s lecture CMOS scaling Introduction to wiresEE1414EECS141-S04Impact ofImpact ofTechnology ScalingTechnology ScalingEE1412EE1415EECS141-S04Goals of Technology ScalingGoals of Technology Scaling Make things cheaper: Want to sell more functions (transistors) per chip for the same money Build same products cheaper, sell the same part for less money Price of a transistor has to be reduced But also want to be faster, smaller, lower powerEE1416EECS141-S04Technology ScalingTechnology Scaling Technology generation spans 2-3 years Benefits of scaling the dimensions by 30%: Reduce gate delay by 30% (increase operating frequency by 43%) Double transistor density Reduce energy per transition by 65% (50% power savings @ 43% increase in frequency Die size used to increase by 14% per generationEE1417EECS141-S04Technology GenerationsTechnology GenerationsEE1418EECS141-S04Technology RoadmapTechnology RoadmapInternational Technology Roadmap for Semiconductors2002 dataNode years: 2007/65nm, 2010/45nm, 2013/32nm, 2016/22nmYear 2001 2003 2005 2007 2010 2013 2016 DRAM ½ pitch [nm] 130 100 80 65 45 32 22 MPU transistors/chip 97M 153M 243M 386M 773M 1.55G 3.09G Wiring levels 8 8 10 10 10 11 11 High-perf. phys. gate [nm] 65 45 32 25 18 13 9 High-perf. VDD [V] 1.2 1.0 0.9 0.7 0.6 0.5 0.4 Local clock [GHz] 1.7 3.1 5.2 6.7 11.5 19.3 28.8 High-perf. power [W] 130 150 170 190 218 251 288 Low-power phys. gate [nm] 90 65 45 32 22 16 11 Low-power VDD [V] 1.2 1.1 1.0 0.9 0.8 0.7 0.6 Low-power power [W] 2.4 2.8 3.2 3.5 3.0 3.0 3.0EE1413EE1419EECS141-S04ITRS Technology Roadmap ITRS Technology Roadmap Acceleration ContinuesAcceleration ContinuesEE14110EECS141-S04Technology Scaling (1)Technology Scaling (1)Minimum Feature SizeMinimum Feature Size1960 1970 1980 1990 2000 201010-210-1100101102YearMinimum Feature Size (micron)EE14111EECS141-S04Technology Scaling (2) Technology Scaling (2) Number of components per chipNumber of components per chipEE14112EECS141-S04Technology Scaling (3)Technology Scaling (3)Propagation DelayPropagation Delaytpdecreases by 30%/yearf increases by 43%EE1414EE14113EECS141-S04Technology Scaling (4)Technology Scaling (4)(a) Power dissipation vs. year.959085800.010.1110100YearPower Dissipation (W)x4 / 3 yearsMPU DSPx1.4 / 3 yearsScaling Factor κ （normalized by 4µm design rule）1011101001000∝ κ 3Power Density (mW/mm2)∝ κ 0.7(b) Power density vs. scaling factor.From KurodaEE14114EECS141-S04Technology Scaling Models Technology Scaling Models • Full Scaling (Constant Electrical Field)• Fixed Voltage Scaling• General Scalingideal model — dimensions and voltage scaletogether by the same factor Smost common model until recently —only dimensions scale, voltages remain constantmost realistic for todays situation —voltages and dimensions scale with different factorsEE14115EECS141-S04Scaling Relationships for Long Channel DevicesScaling Relationships for Long Channel DevicesEE14116EECS141-S04Transistor ScalingTransistor Scaling(Velocity(Velocity--Saturated Devices)Saturated Devices)EE1415EE14117EECS141-S04µµProcessorProcessorScalingScalingS. Borkar, IEEE Micro 1999.P.Gelsinger: µProcessors for the New Millenium, ISSCC 200140048008808080858086286386486Pentium® procP60.0010.010.111010010001970 1980 1990 2000 2010YearTransistors (MT)2X growth in 1.96 years!EE14118EECS141-S04µµProcessorProcessorPowerPowerS. Borkar, IEEE Micro 1999.P.Gelsinger: µProcessors for the New Millenium, ISSCC 20015KW 18KW 1.5KW 500W 40048008808080858086286386486Pentium® proc0.11101001000100001000001971 1974 1978 1985 1992 2000 2004 2008YearPower (Watts)EE14119EECS141-S04µµProcessorProcessorPerformancePerformanceP.Gelsinger: µProcessors for the New Millenium, ISSCC 2001EE14120EECS141-S042010 Outlook2010 Outlook Performance 2X/16 months 1 TIP (terra instructions/s) 30 GHz clock Size No of transistors: 2 Billion Die: 40*40 mm Power 10kW!! Leakage: 1/3 of total PowerP.Gelsinger: µProcessors for the New Millenium, ISSCC 2001EE1416EE14121EECS141-S04Some interesting questionsSome interesting questions What will cause this model to break? When will it break? Will the model gradually slow down? Power and power density Leakage Process VariationEE14122EECS141-S04WiresWiresEE14123EECS141-S04The WireThe Wiretransm ittersreceiversschematicsphysicalEE14124EECS141-S04Interconnect Impact on ChipInterconnect Impact on ChipEE1417EE14125EECS141-S04Wire ModelsWire ModelsAll-inclusive modelCapacitance-onlyEE14126EECS141-S04Impact of Interconnect Impact of Interconnect ParasiticsParasitics Interconnect parasitics reduce reliability affect performance and power consumption Classes of parasitics Capacitive Resistive InductiveEE14127EECS141-S0410 100 1,000 10,000 100,000Length (u)No of nets(Log Scale)Pentium Pro (R)Pentium(R) IIPentium (MMX)Pentium (R)Pentium (R) IINature of InterconnectNature of InterconnectLocal InterconnectGlobal InterconnectSLocal = STechnologySGlobal= SDieSource: IntelEE14128EECS141-S04INTERCONNECTINTERCONNECTEE1418EE14129EECS141-S04Capacitance of Wire InterconnectCapacitance of Wire InterconnectVDDVDDVinVoutM1M2M3M4Cdb2Cdb1Cgd12CwCg4Cg3Vout2FanoutInterconnectVoutVinCLSimplifiedModelEE14130EECS141-S04Capacitance: The Parallel Plate ModelCapacitance: The Parallel Plate ModelDiele ctricSubstrateLWHtdiElectrical-field linesCurre nt flowWLtcdidiintε=LLCwireSSSSS1=⋅=EE14131EECS141-S04PermittivityPermittivityEE14132EECS141-S04Fringing CapacitanceFringing CapacitanceW -
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