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Berkeley ELENG 105 - Lecture Notes

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Lecture 20 OUTLINE Review of MOSFET Amplifiers MOSFET Cascode Stage MOSFET Current Mirror Reading Chapter 9 EE105 Spring 2008 Lecture 20 Slide 1 Prof Wu UC Berkeley Review MOSFET Amplifier Design A MOSFET amplifier circuit should be designed to 1 ensure that the MOSFET operates in the saturation region 2 allow the desired level of DC current to flow and 3 couple to a small signal input source and to an output load Proper DC biasing is required DC analysis using large signal MOSFET model Key amplifier parameters AC analysis using small signal MOSFET model Voltage gain Av vout vin Input resistance Rin resistance seen between the input node and ground with output terminal floating Output resistance Rout resistance seen between the output node and ground with input terminal grounded EE105 Spring 2008 Lecture 20 Slide 2 Prof Wu UC Berkeley MOSFET Models The large signal model is used to determine the DC operating point VGS VDS ID of the MOSFET The small signal model is used to determine how the output responds to an input signal EE105 Spring 2008 Lecture 20 Slide 3 Prof Wu UC Berkeley Comparison of Amplifier Topologies Common Source Large Av 0 degraded by RS Large Rin determined by biasing circuitry Rout RD ro decreases Av Rout but impedance seen looking into the drain can be boosted by source degeneration EE105 Spring 2008 Common Gate Large Av 0 degraded by RS Small Rin decreased by RS Rout RD ro decreases Av Rout but impedance seen looking into the drain can be boosted by source degeneration Lecture 20 Slide 4 Source Follower 0 Av 1 Large Rin determined by biasing circuitry Small Rout decreased by RS ro decreases Av Rout Prof Wu UC Berkeley Common Source Stage 0 RD R1 R2 Av RG R1 R2 1 R S gm Rin R1 R2 Rout R D EE105 Spring 2008 0 Rout RD rO g m rO RS Lecture 20 Slide 5 Prof Wu UC Berkeley Common Gate Stage 0 RS 1 gm Av gm RD RS 1 gm RG 1 Rin RS gm 0 Rout R D Rout RD rO g m rO RS EE105 Spring 2008 Lecture 20 Slide 6 Prof Wu UC Berkeley Source Follower 0 0 Av RS Av 1 RS gm Rin RG Rout 1 rO RS gm Rin R G 1 RS gm EE105 Spring 2008 rO RS Rout Lecture 20 Slide 7 1 ro RS gm Prof Wu UC Berkeley CS Stage Example 1 M1 is the amplifying device M2 and M3 serve as the load Equivalent circuit for small signal analysis showing resistances connected to the drain 1 Av g m1 rO3 rO 2 rO1 g m3 1 Rout rO3 rO 2 rO1 g m3 EE105 Spring 2008 Lecture 20 Slide 8 Prof Wu UC Berkeley CS Stage Example 2 M1 is the amplifying device M3 serves as a source degeneration resistance M2 serves as the load Equivalent circuit for small signal analysis 1 0 rO2 Av 1 1 rO3 gm1 gm3 EE105 Spring 2008 Lecture 20 Slide 9 Prof Wu UC Berkeley CS Stage vs CG Stage With the input signal applied at different locations these circuits behave differently although they are identical in other aspects Common gate amplifier Common source amplifier 1 0 2 0 Av gm1 1 gm2rO2 RS rO2 rO1 EE105 Spring 2008 Lecture 20 Slide 10 Av rO1 1 RS gm2 Prof Wu UC Berkeley Composite Stage Example 1 By replacing M1 and the current source with a Thevenin equivalent circuit and recognizing the right side as a CG stage the voltage gain can be easily obtained 1 0 EE105 Spring 2008 2 0 Av Lecture 20 Slide 11 RD 1 1 g m 2 g m1 Prof Wu UC Berkeley Composite Stage Example 2 This example shows that by probing different nodes in a circuit different output signals can be obtained Vout1 is a result of M1 acting as a source follower whereas Vout2 is a result of M1 acting as a CS stage with degeneration 1 rO2 vout1 g m2 1 1 vin rO2 gm1 gm2 1 0 vout2 vin EE105 Spring 2008 Lecture 20 Slide 12 1 rO3 rO4 g m3 1 1 rO2 gm1 gm2 Prof Wu UC Berkeley NMOS Cascode Stage Rout 1 g m1rO1 rO 2 rO1 Rout g m1rO1rO 2 Unlike a BJT cascode the output impedance is not limited by EE105 Spring 2008 Lecture 20 Slide 13 Prof Wu UC Berkeley PMOS Cascode Stage Rout 1 g m1rO1 rO 2 rO1 Rout g m1rO1rO 2 EE105 Spring 2008 Lecture 20 Slide 14 Prof Wu UC Berkeley Short Circuit Transconductance The short circuit transconductance is a measure of the strength of a circuit in converting an input voltage signal into an output current signal iout Gm vin The voltage gain of a linear circuit is vout 0 Av Gm Rout Rout is the output resistance of the circuit EE105 Spring 2008 Lecture 20 Slide 15 Prof Wu UC Berkeley Transconductance Example Gm g m1 EE105 Spring 2008 Lecture 20 Slide 16 Prof Wu UC Berkeley MOS Cascode Amplifier Av Gm Rout Av g m1 1 g m 2 rO 2 rO1 rO 2 Av g m1rO1 g m 2 rO 2 EE105 Spring 2008 Lecture 20 Slide 17 Prof Wu UC Berkeley PMOS Cascode Current Source as Load A large load impedance can be achieved by using a PMOS cascode current source RoN g m 2 rO 2 rO1 RoP g m 3 rO 3 rO 4 Rout RoN RoP EE105 Spring 2008 Lecture 20 Slide 18 Prof Wu UC Berkeley MOS Current Mirror The motivation behind a current mirror is to duplicate a scaled version of the golden current to other locations Current mirror concept Generation of required VGS 1 W 2 I REF nCox VX VTH 2 L REF VX EE105 Spring 2008 2 I REF VTH 1 nCox W L 1 Lecture 20 Slide 19 Current Mirror Circuitry I copy1 1 W nCox VX VTH 2 2 L 1 W L 1 I copy1 W L REF I REF Prof Wu UC Berkeley MOS Current Mirror NOT This is not a current mirror because the relationship between VX and IREF is not clearly defined The only way to clearly define VX with IREF is to use a diode connected MOS since it provides square law I V relationship EE105 Spring 2008 Lecture 20 Slide 20 Prof Wu UC Berkeley Example Current Scaling MOS current mirrors can be used to scale IREF up or down I1 0 2mA I2 0 5mA 0 EE105 Spring 2008 Lecture 20 Slide 21 Prof Wu UC Berkeley Impact of Channel Length Modulation 0 1 W nCox VX VTH 2 1 VDS1 VD sat 2 L 1 1 W 2 nCox VX VTH 1 VDS1 VGS VTH 2 L 1 I copy1 1 W 2 I REF nCox VX VTH 1 VGS VD sat 2 L REF 1 W 2 nCox VX VTH 1 VTH 2 L REF W L 1 I copy1 W L REF EE105 Spring 2008 VDS 1 VGS 1 VDS 1 VGS VTH W L 1 I REF I REF 1 W L REF 1 VTH 1 …


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Berkeley ELENG 105 - Lecture Notes

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