1 Department number and title of course Electrical Engineering and Computer Sciences EE 105 Microelectronic Devices and Circuits 2 Catalog Description 4 units Three hours of lecture one hour of discussion and three hours of laboratory per week This course covers the fundamental circuit and device concepts needed to understand analog integrated circuits After an overview of the basic properties of semiconductors the p n junction and MOS capacitors are described and the MOSFET is modeled as a large signal device Two port small signal amplifiers and their realization using single stage and multistage CMOS building blocks are discussed Sinusoidal steady state signals are introduced and the techniques of phasor analysis are developed including impedance and the magnitude and phase response of linear circuits The frequency responses of single and multi stage amplifiers are analyzed Differential amplifiers are introduced 3 Prerequisites EE40 4 Textbooks and or other required material R T Howe and C G Sodini Microelectronics an Integrated Approach PrenticeHall 1997 5 Course objectives This course introduces the basic theory of semiconductor devices and circuits and the basic circuit analysis skills for large signal small signal and ac frequency response Its intention is to promote rigorous thinking about semiconductor devices and circuits through precise modeling 6 Topics Covered Introduction Semiconductors Microelectronics Moore s Law Semiconductor basics Intrinsic silicon electrons holes charge neutrality Doping Donors acceptors compensation Charge transport and the IC resistor Transport Drift drift current density Ohm s law velocity saturation IC resistor Lateral drift current IC Fabrication IC resistor Non linear resistor IC resistor Capacitance interconnect Approximate passive models Extraction Diffusion currents Electrostatics Review 1 D Gauss s law and boundary conditions Metal metal capacitor layout Charge fields and capacitance pn Junctions Thermal equilibrium Depletion approximation Potential vs doping The built in potential Charge field potential for pn junction pn Junctions Reverse bias Forward bias and Capacitance Charge field potential in reverse bias qJ f vD pn Junction capacitance Cj dqJ dvD pn Diode in forward bias A first pass and the i v relationship MOS Capacitors Surface charge in thermal equilibrium Depletion accumulation and inversion qG f vGS and Cg dqG dvGS MOSFETs Large signal Model Symbols and drain characteristics Triode and saturation regions Backgate effect MOSFET Sample Hold Circuit Graphical analysis Analytical solution SPICE Common Source Amplifier Resistive Load Large signal transfer curve Smallsignal operation Motivate small signal model MOSFET Small Signal Model Transconductance including backgate output resistance capacitances Small Signal Analysis Body effect PMOS model MOSFET Current Sources and Sinks Diode connected MOSFET as voltage source Current mirror concept Audio Digital to Analog Converter Example Two Port Models Four amplifier types Voltage current trans G trans R tests to find amplifier parameters Common Drain Amplifier Voltage gain input and output resistances Common Gate Amplifier Current gain input and output resistances Frequency Response MOSFET ac Models Transfer functions Poles and zeroes Bode plot techniques Frequency Response Phasor analysis for sinusoidal steady state signals Bode plots Frequency Analysis Second Order Circuits Second Order Circuits Amplifier Response Unity gain frequency gain bandwidth product Frequency Domain Analysis Insight Approximations Feedforward zero Miller approximation Method of time constants Common Gate Common Drain Frequency Response Multi Stage Amplifiers Boostrapping of gate source capacitance Multi stage amplifiers Multistage Amplifiers The cascode Two port models Current and voltage bias design ac Analysis Forward Biased pn Junction Bipolar Junction Transistor Modes of operation of a BJT Bipolar Junction Transistor Principle of operation Bipolar Junction Transistor Transistor action Ebers Moll model Large signal model Bipolar Junction Transistor cont Small signal model CE CB CC amplifiers BJT versus MOSFET Emitter degeneration Frequency Dependence of Input and Output Impedances Frequency response of CC amplifier figures of merit gm IC fT 7 Class laboratory schedule Two one and half hour lectures and one three hour laboratory per week 8 Contribution of course meeting the professional component This course covers engineering topics It provides introductory laboratory experience It is approximately 90 science and 10 design 9 Relationship of course to program objectives EECS 105 requires students to apply a fundamental knowledge of mathematics science and engineering to solve electrical and computer engineering problems Students learn modern skills techniques and engineering tools 10 Prepared by Professor Ming Wu 1 April 2006
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