1. Department, number and title of course: Electrical Engineering and Computer Sciences: EE 105 – Microelectronic Devices and Circuits 2. Catalog Description: (4 units) Three hours of lecture, one hour of discussion, and three hours of laboratory per week. This course covers the fundamental circuit and device concepts needed to understand analog integrated circuits. After an overview of the basic properties of semiconductors, the p-n junction and MOS capacitors are described and the MOSFET is modeled as a large-signal device. Two port small-signal amplifiers and their realization using single stage and multistage CMOS building blocks are discussed. Sinusoidal steady-state signals are introduced and the techniques of phasor analysis are developed, including impedance and the magnitude and phase response of linear circuits. The frequency responses of single and multi-stage amplifiers are analyzed. Differential amplifiers are introduced. 3. Prerequisites: EE40. 4. Textbooks and/or other required material: R. T. Howe and C. G. Sodini, Microelectronics: an Integrated Approach, Prentice-Hall, 1997. 5. Course objectives: This course introduces the basic theory of semiconductor devices and circuits, and the basic circuit analysis skills for large-signal, small-signal, and ac frequency response. Its intention is to promote rigorous thinking about semiconductor devices and circuits through precise modeling. 6. Topics Covered: Introduction; Semiconductors – Microelectronics; Moore's Law; Semiconductor basics: Intrinsic silicon, electrons, holes, charge neutrality; Doping: Donors, acceptors, compensation. Charge transport and the IC resistor – Transport: Drift, drift current density, Ohm's law, velocity saturation; IC resistor: Lateral drift current. IC Fabrication – IC resistor: Non-linear resistor; IC resistor: Capacitance (interconnect); Approximate passive models: Extraction; Diffusion currents. Electrostatics Review – 1-D Gauss's law and boundary conditions; Metal-metal capacitor layout; Charge, fields, and capacitance. pn Junctions: Thermal equilibrium – Depletion approximation; Potential vs. doping: The built-in potential; Charge, field, potential for pn junction. pn Junctions: Reverse bias, Forward bias, and Capacitance – Charge, field, potential in reverse bias: qJ = f(vD); pn Junction capacitance: Cj = dqJ / dvD; pn Diode in forward bias: A first pass and the i-v relationship. MOS Capacitors – Surface charge in thermal equilibrium; Depletion, accumulation, and inversion; qG = f(vGS) and Cg = dqG / dvGS . MOSFETs: Large-signal Model – Symbols and drain characteristics; Triode and saturation regions; Backgate effect. MOSFET Sample & Hold Circuit – Graphical analysis; Analytical solution; SPICE. Common Source Amplifier (Resistive Load) – Large-signal transfer curve; Small-signal operation: Motivate small-signal model. MOSFET Small-Signal Model –Transconductance, including backgate output resistance, capacitances. Small-Signal Analysis – Body effect; PMOS model. MOSFET Current Sources (and Sinks) – Diode-connected MOSFET as voltage source; Current mirror concept; Audio Digital-to-Analog Converter Example.Two-Port Models – Four amplifier types: Voltage, current, trans-G, trans-R tests to find amplifier parameters. Common-Drain Amplifier – Voltage gain, input and output resistances. Common-Gate Amplifier – Current gain, input and output resistances. Frequency Response, MOSFET ac Models – Transfer functions; Poles and zeroes; Bode plot techniques. Frequency Response – Phasor analysis for sinusoidal steady-state signals; Bode plots. Frequency Analysis, Second-Order Circuits Second-Order Circuits, Amplifier Response – Unity gain frequency, gain-bandwidth product. Frequency-Domain Analysis Insight & Approximations – Feedforward zero Miller approximation; Method of time constants. Common Gate, Common Drain Frequency Response, Multi-Stage Amplifiers – Boostrapping of gate-source capacitance; Multi-stage amplifiers. Multistage Amplifiers: The cascode – Two-port models; Current and voltage bias design; ac Analysis. Forward-Biased pn Junction, Bipolar Junction Transistor – Modes of operation of a BJT. Bipolar Junction Transistor – Principle of operation. Bipolar Junction Transistor – Transistor action; Ebers-Moll model; Large-signal model. Bipolar Junction Transistor (cont.) – Small-signal model; CE, CB, CC amplifiers; BJT versus MOSFET; Emitter degeneration. Frequency Dependence of Input and Output Impedances – Frequency response of CC amplifier; figures of merit (gm/IC, fT). 7. Class/laboratory schedule: Two one-and-half-hour lectures and one three-hour laboratory per week. 8. Contribution of course meeting the professional component: This course covers engineering topics. It provides introductory laboratory experience. It is approximately 90% science and 10% design. 9. Relationship of course to program objectives: EECS 105 requires students to apply a fundamental knowledge of mathematics, science and engineering to solve electrical and computer engineering problems. Students learn modern skills, techniques and engineering tools. 10. Prepared by: Professor Ming Wu, 1 April
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