Berkeley ELENG 105 - Report 6: Biasing Circuitry (3 pages)

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Report 6: Biasing Circuitry



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Report 6: Biasing Circuitry

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Pages:
3
School:
University of California, Berkeley
Course:
Eleng 105 - Microelectronic Devices and Circuits
Microelectronic Devices and Circuits Documents

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UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE105 Lab Experiments Report 6 Biasing Circuitry Name Lab Section 1 Lab Questions 3 1 4 What is RC when VOUT 650 mV RC 3 1 5 Roughly sketch IC vs VOUT for the transistor and for the resistor showing the fixed point solution for VOUT How would we adjust the resistor to increase VOUT 3 1 6 Roughly sketch a graph of IOUT vs VOUT 3 1 7 Does the voltage source become better or worse better as defined by being closer to an ideal source as the resistor decreases Why 3 1 8 Output impedance Rout 1 1 LAB QUESTIONS 2 3 1 9 Now suppose you want to make your voltage source output 1 3 V Clearly putting 1 3 V on VBE of the diode connected BJT is not a good idea please don t even try Draw a circuit topology to achieve this voltage without requiring a BJT to have an extremely high VBE 3 2 2 Short circuit current IOUT 3 2 3 Roughly sketch IOUT vs VOUT Find Rout in terms of the small signal characteristics Theoretical Rout 3 2 4 What happens to the output impedance as VOUT nears 5 V 3 2 5 Output impedance at VOUT 2 5 V Measured Rout 3 2 6 8 Transistors in parallel with VOUT 2 5 V IOUT Rout Explain the effect of the second transistor on the output impedance 1 LAB QUESTIONS 3 3 3 2 6 Properties of the CE amp with current mirror VIN Av IC2 IC3 Rin Rout 3 3 7 How do the impedances and gain compare with a common emitter biased with a resistor instead 3 3 8 Explain this effect using what you know about BJT temperature effects How may this be an advantage of BJT biasing over resistive biasing



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