Lab QuestionsUNIVERSITY OF CALIFORNIA AT BERKELEYCollege of EngineeringDepartment of Electrical Engineering and Computer SciencesEE105 Lab ExperimentsReport 6: Biasing CircuitryName:Lab Section:1 Lab Questions3.1.4 What is RCwhen VOU T= 650 mV?RC=3.1.5 Roughly sketch ICvs. VOU Tfor the transistor and for the resistor, showing the fixed point solutionfor VOU T. How would we adjust the resistor to increase VOU T?3.1.6 Roughly sketch a graph of IOU Tvs. VOU T.3.1.7 Does the voltage sour c e become better or worse (better as defined by being closer to an ideal source)as the resistor dec reases? Why?3.1.8 Output impeda nce :Rout=11 LAB QUESTIONS 23.1.9 Now, suppose you want to make your voltage source output 1.3 V. Clearly, putting 1.3 V on VBEofthe diode connected BJT is not a good idea (please, don’t even try). Dr aw a circuit topology to achievethis voltage without requiring a BJT to have an extremely high VBE.3.2.2 Short circuit current:IOU T=3.2.3 Roughly sketch IOU Tvs. VOU T. Find Routin terms of the small-signal characteristics.Theoretical Rout=3.2.4 What happens to the output impedance as VOU Tnears 5 V?3.2.5 Output impeda nce at VOU T= 2.5 VMeasured Rout=3.2.6–8 Transistors in pa rallel with VOU T= 2.5 V:IOU T=Rout=Explain the effect of the second transistor on the output impedance.1 LAB QUESTIONS 33.3.2–6 Properties of the CE amp with curre nt mirr or:VIN=Av=IC2=IC3=Rin=Rout=3.3.7 How do the impedances and gain compare with a common emitter biased with a resistor instead?3.3.8 Explain this effect using what you know about BJT temperature effects. How may this be an advantageof BJT biasing over resistive
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