EE105 Fall 2006 Microelectronic Devices and Circuits Prof Jan M Rabaey jan eecs Lecture 29 Review and Perspectives Lecture Material Last lecture The semester at a glance Review 2 1 Administrativia Final We December 13 12 30 3 30pm 105 North Gate TA s have posted extra office hours please check Homeworks 10 and graded and available for pick up Check your homework grades on the web 3 What we learned Devices Basic properties of semiconductor materials Some words about semiconductor manufacturing Diode MOS and Bipolar transistor operation Large signal small signal and SPICE model Frequency domain behavior Basic Components Resistors Capacitors Transistors Voltage and Current Sources 4 2 What we learned Amplifiers Two port models Input and output resistance Voltage or Current Gain Transconductance Transresistance Frequency domain analysis Bode plots Miller capacitance open circuit time constants Three basic configurations Common source emitter gate base collector drain Derivation of two port models Biasing Frequency domain response Differential amplifier Intro 5 What we learned Second order circuits Resonance Frequency domain response quality factor Q Transient response damping 6 3 Material covered Howe and Sodini Chapter 2 and 3 Semiconductor physics and electrostatics Chapter 6 Diode operation Chapter 4 MOS transistor Chapter 7 Bipolar transistor For each of the above ignore the second pass sections Chapter 8 Amplifiers Chapter 9 Multi stage amplifiers Chapter 10 Frequency response of amplifiers Chapter 11 1 and 11 2 Differential amplifier 7 EECS 105 in the Grand Scheme 8 4 EECS 105 in the Grand Scheme Example Cell Phone 9 5
View Full Document
Unlocking...