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Berkeley ELENG 105 - Bipolar Junction Transistor Small Signal Models

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1EE105 - Fall 2005Microelectronic Devices and CircuitsLecture 27Bipolar Junction TransistorSmall Signal Models2AnnouncementsHomework 12 (the last one!) due next TuesdayLab 9 (the last one!) this weekReading: Chapter 7 (7.4-5)3Lecture MaterialLast lectureBipolar junction transistorCollector currentThis lectureBipolar junction transistorSmall-signal models18BJT CapacitancesBase-charging capacitance Cb: due to minority carrier charge storage (mostly electrons in the base)FmbgC τ=Base-emitter depletion capacitance: CjE= 1.4 CjEoTotal B-E capacitance: Cπ= CjE+ Cb19Complete Small-Signal Model20Bipolar AmplifiersCommon-emitter amplifier: Biasing: adjustVBIAS= VBEsothat IC= ISUP.(Note: this could be tricky!)221Small-Signal Two-Port ModelParameters:Rin= Rout=


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Berkeley ELENG 105 - Bipolar Junction Transistor Small Signal Models

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