1EE105 - Fall 2005Microelectronic Devices and CircuitsProf. Borivoje NikolićTu-Th 3:30-5pm277 Cory2What is this class all about?Introduction to semiconductor devices and integrated circuits.Circuit analysis and design techniques. Time and frequency domain analysis. PN junctions and bipolar transistors. MOSFET physics and modeling. Integrated passives. Single stage amplifiers. Differential amplifiers. Introduction to feedback. Frequency response of amplifiers. Multistage AmpsWhat will you learn?Understanding, designing, and optimizing analog integrated circuits. Understanding the operation of semiconductor devices.23Practical InformationInstructorProf. Borivoje Nikolic570 Cory Hall, 643-9297, bora@eecsOffice hours: Mo 10:00am-12pm, Th 5:00pm-6:00pmTAs:Jessica Pannequin, jessicap@eecs, OH: W 3-4pm, 382 CoryJesse Richmond, jar@eecs, OH: F 1-2, 382 CorySeung-Bum Suh, sbsuh@eecs, OH: Tu 9-10am, 382 CoryHiu-Yung Wong, hywong2@eecs, OH: M: 3-4pm, 382 CoryWeb page: http://www-inst.eecs.berkeley.edu/~ee105 4Discussions and LabsDiscussion sessionsM 9-10am, Jessica Pannequin, 289 Cory Tu 10-11am, Seung-Bum Suh, 241 CoryW 5-6pm, Jesse Richmond, 237 CoryF 11am-12pm Hiu-Yung Wong, 293 CorySame material in all sessions!Labs (353 Cory)M 12-3pmTu 12:30-3:30pmW 9am-12pm, 12-3pm, 3-6pmF 10am-1pmPlease choose one lab session and stick with it!Cancelled!35TAmtngMTWRF89101112123456LabTBA353 CoryLabTBA353 CoryLabTBA353 CoryOHBora570 CoryDISC*(Jessica)289 CoryDISC*(Hiu)293 CoryLec(Bora)521 CoryProblemSets DueLec(Bora)521 Cory* Discussion sections will cover identical materialOHBora570 CoryOHJesse382 CoryYour EECS105 WeekOHHiu382 CoryOHSeung-Bum382 CoryDISC*Seung-Bum289 CoryLabTBA353 CoryLabTBA353 CoryOHJessica382 CoryDISC*(Jesse)289 Cory6Class Organization10 Assignments~10 Labs2 midterms, 1 finalMidterm 1: Thursday, October 13, evening Midterm 2: Tuesday, November 17, eveningFinal: Tuesday, December 20, 12:30-3:30pm (last day of exams)47Some Important AnnouncementsPlease don’t bring food/drinks to 353 CoryPlease use the newsgroup to ask questions (ucb.class.ee105)Labs done in pairs, individual measurements, individual reportsHomework is done individuallyDon’t even think about cheating!8Grading PolicyHomeworks: 15%Labs: 15%Midterms: 30%Final: 40%59Class MaterialTextbook: “Microelectronics: An Integrated Approach”, by R. Howe, C. SodiniClass notes: Web pageLab Reader:Available on the web page!Selected material will be made available from Copy CentralCheck web page for the availability of tools10The Web SiteClass and lecture notesAssignments and solutionsLab manualPast exams, earlier class web pagesMany other goodies …The sole source of informationhttp://www-inst.eecs.berkeley.edu/~ee105Print only what you need: Save a tree!611SoftwareHSPICE Industry standardOnline tutorialsThere are free versions of WinSpice and PSPICE that you can use at home12Getting StartedAssignment 1: Due next Tuesday, September 5, 5pmNO discussion sessions or labs this week.First discussion sessions in Week 2First lab in Week 3713EECS 105: Course OverviewSemiconductor physics (1 week)PN Junction / BJT Physics/Model (1.5 weeks)MOSFET Physics/Model (1 week)Integrated Passives (R, C, L) (1 week)Circuit analysis techniques (2 weeks)Single Stage Amplifiers (2 weeks)Feedback and Diff Amps (1 week)Freq Resp of Single Stage Amps (1 week)Multistage Amps (2.5 weeks)Freq Resp of Multistage Amps (1 week)14EECS 105 in the Grand Scheme815EECS 105 in the Grand Scheme Example: Cell Phone16The First Integrated Circuits Bipolar logic1960’sECL 3-input GateMotorola 1966917Intel Pentium 4 Microprocessor90nm CMOS technology18EECS 105: Emphasis in Analog14-bit analog-to-digital converterY. Chiu, IEEE Int’l Solid-State Circuits Conference 2004.1019Transistors are BricksTransistors are the building blocks (bricks) of the modern electronic world:Focus of course:Understand device physicsBuild analog circuitsLearn electronic prototyping and measurementLearn simulations tools such as SPICEAnalog “Amp”DigitalGateMOS CapPN JunctionVariableCapacitor20SPICESPICE = Simulation Program with IC EmphasisInvented at Berkeley (released in 1972).DC: Find the DC operating point of a circuit.TRAN: Solve the transient response of a circuit (solve a system of generally non-linear ordinary differential equations via adaptive time-step solver).AC: Find steady-state response of circuit to a sinusoidal excitation* Example netlistQ1 1 2 0 npnmodR1 1 3 1kVdd 3 0 3v.tran 1u 100u SPICESPICEstimulusnetlistresponse1121BSIMTransistors are complicated. Accurate sim requires 2D or 3D numerical sim (TCAD) to solve coupled PDEs (quantum effects, electromagnetics, etc)This is slow … a circuit with one transistor will take hours to simulationHow do you simulate large circuits (100s-1000s of transistors)?Use compact models. In EECS 105 we will derive the so called “level 1” model for a MOSFET.The BSIM family of models are the industry standard models for circuit simulation of advanced process transistors.BSIM = Berkeley Short Channel IGFET Model22Lecture OutlineSemiconductors Si Diamond StructureBond Model Intrinsic Carrier ConcentrationDoping by Ion Implantation1223Resistivity for a Few MaterialsPure copper, 273K 1.56×10-6 ohm-cmPure copper, 373 K 2.24×10-6 ohm-cmPure germanium, 273 K 200 ohm-cmPure germanium, 500 K .12 ohm-cmPure water, 291 K 2.5×107 ohm-cmSeawater 25 ohm-cmWhat gives rise to this enormous range?Why are some materials semi-conductive?Why the strong temp dependence?24Electronic Properties of SiliconSilicon is in Group IV (atomic number 14)Atom electronic structure: 1s22s22p63s23p2Crystal electronic structure: 1s22s22p63(sp)4Diamond lattice, with 0.235 nm bond lengthVery poor conductor at room temperature: why?(1s)2(2s)2(2p)6(3sp)4Hybridized State1325Periodic Table of Elements26The Diamond Structure3sp tetrahedral bondoA43.5oA35.21427States of an AtomQuantum Mechanics: The allowed energy levels for an atom are discrete (2 electrons with opposite spin can occupy a state)When atoms are brought into close contact, these energy levels splitIf there are a large number of atoms, the discrete energy levels form a “continuous” bandEnergyE1E2...E3Forbidden Band GapAllowedEnergyLevelsLattice ConstantAtomic Spacing28Energy Band DiagramThe gap between the conduction and valence band determines the conductive properties of the materialMetalnegligible band gap or overlapInsulator large band gap, ~ 8 eVSemiconductormedium sized gap, ~ 1 eVValence
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