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Berkeley ELENG 105 - Problem Set

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UNIVERSITY OF CALIFORNIACollege of EngineeringDepartment of Electrical Engineering and Computer SciencesCostas J. SpanosProblem Set #11Due Wednesday, November 11th, 1998EECS105 FALL 1998Default values to use on this problem set: VTn = -VTp = 1 V, VDD = 5 V, µNCOX = 50 µA/V2, µPCOX = 25µA/V2, VGS,sat = 1.5 V, VCE,sat = .2 V, and VBE,sat = .7 V1. Examine the circuit in Figure 1.a. What is the circuit’s purpose?b. What is the minimum vOUT that can be sustained and still have all devices operating in their constantcurrent region?2. Check out the totem pole in Figure 2. It is decreed that W/L = 10/2 and IS = 10-15 A. You may neglect basecurrent and backgate effect. Assume all devices are operating in their constant-current region.a. Solve for VOUT1, VOUT2, and VOUT3.b. Maintaining the same VOUT1 as part (a), change the W/L of device M2 so that V OUT2 = 2.4 V.c. How does implementing part (b) change the value of VOUT33. Take a good close look at Figure 3. MR has a device sizing of W/L = 10/2. Assume all devices are operatingin the constant current region (surprise!), and neglect backgate effect.a. Find (W/L)1 such that IOUT1 = 60 µA.b. Find (W/L)2 such that IOUT2 = 120 µA.c. Find (W/L)3 such that IOUT3 = 300 µA.Over->24. For the next stage in your education you will compare a bipolar and MOS voltage source. The two sourcesare shown in Figure 4. IREF = 100 µA, and the device characteristics are as follows:BJT Characteristics: IS = 10-15 A, βF = β0 = 100, VA = 20 V.MOS Characteristics: W/L = 20/2, VTn = 0.7 V, λn = 0.03 V-1a. Find an expression for VOUT as a function of Iout in the bipolar case, and find it’s explicit value forIout = 0. This time do NOT neglect IB.b. Now solve for VOUT in the MOS case.c. Solve for the incremental source resistance in the BJT.d. Solve for the incremental source resistance in the MOS.5. Last but not least, inspect the cascode current source in Figure 5. For the questions, assume that the W/Lratio of all devices is 10 and that IOUT = 100 µA. The PMOS device characteristics are as follows: VTp = -0.7V and λp = 0.03 V-1. Assume that all bulk connections are tied to the source.a. Calculate the incremental source resistance of the current source.b. If IOUT is required to be 20 µA, what is the new W/L of devices M2 and M2B assuming that IREFremains at 100 µA?c. Assuming part (b) is implemented, what is the new incremental source resistance?Notice the new Date and Time for the 2nd Midterm: Friday 6-7:30pm, 20th of November in SibleyFor the latest news, visit our web site: http://www-inst.EECS.Berkeley.EDU/~ee105/Please post your questions on our newsgroup: ucb.class.ee105Please return your homework in 558 Cory Hall, to Cheryl Craigwell (cmc@eecs, 642-1237,fax 642-2739), or in class by 11:10am of the due date. Late homeworks will not be


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Berkeley ELENG 105 - Problem Set

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