What is this class all about Introduction to semiconductor devices and integrated circuits EE105 Fall 2005 Microelectronic Devices and Circuits Circuit analysis and design techniques Time and frequency domain analysis PN junctions and bipolar transistors MOSFET physics and modeling Integrated passives Single stage amplifiers Differential amplifiers Introduction to feedback Frequency response of amplifiers Multistage Amps Prof Borivoje Nikoli Tu Th 3 30 5pm 277 Cory What will you learn Understanding designing and optimizing analog integrated circuits Understanding the operation of semiconductor devices 2 Practical Information Discussions and Labs Instructor Discussion sessions Prof Borivoje Nikolic M 9 10am Jessica Pannequin 289 Cory Tu 10 11am Seung Bum Suh 241 Cory W 5 6pm Jesse Richmond 237 Cory F 11am 12pm Hiu Yung Wong 293 Cory Same material in all sessions 570 Cory Hall 643 9297 bora eecs Office hours Mo 10 00am 12pm Th 5 00pm 6 00pm TAs Jessica Pannequin jessicap eecs OH W 3 4pm 382 Cory Jesse Richmond jar eecs OH F 1 2 382 Cory Seung Bum Suh sbsuh eecs OH Tu 9 10am 382 Cory Hiu Yung Wong hywong2 eecs OH M 3 4pm 382 Cory Labs 353 Cory M 12 3pm Tu 12 30 3 30pm Cancelled W 9am 12pm 12 3pm 3 6pm F 10am 1pm Web page Please choose one lab session and stick with it http www inst eecs berkeley edu ee105 3 Your EECS105 Week 8 M T W 9 10 11 DISC Jessica 289 Cory 12 Class Organization 1 2 4 OH Bora Lab TBA OH Hiu 353 Cory 382 Cory Lab TBA 289 Cory 353 Cory 353 Cory 382 353Cory Cory DISC Lab Hiu TBA OH Jesse 382 Cory 6 10 Assignments Problem Sets Due 10 Labs 2 midterms 1 final Midterm 1 Thursday October 13 evening Midterm 2 Tuesday November 17 evening Final Tuesday December 20 12 30 3 30pm last day of exams 521 Cory OH Lab Jessica TBA 293 353 Cory 5 Lec Bora Lab TBA R F 3 570 Cory DISC OH Seung Bum Seung Bum 382 Cory 4 DISC Jesse 289 Cory Lec Bora OH Bora 521 Cory 570 Cory TA mtng Discussion sections will cover identical material 5 6 1 Some Important Announcements Grading Policy Please don t bring food drinks to 353 Cory Homeworks 15 Please use the newsgroup to ask questions ucb class ee105 Labs done in pairs individual measurements individual reports Homework is done individually Don t even think about cheating Labs 15 Midterms 30 Final 40 7 Class Material 8 The Web Site Textbook Microelectronics An Integrated Approach by R Howe C Sodini Class notes Web page Lab Reader Class and lecture notes Assignments and solutions Lab manual Past exams earlier class web pages Many other goodies Available on the web page Selected material will be made available from Copy Central Check web page for the availability of tools The sole source of information http www inst eecs berkeley edu ee105 Print only what you need Save a tree 9 Software 10 Getting Started HSPICE Assignment 1 Due next Tuesday September 5 5pm Industry standard Online tutorials NO discussion sessions or labs this week There are free versions of WinSpice and PSPICE that you can use at home First discussion sessions in Week 2 First lab in Week 3 11 12 2 EECS 105 Course Overview EECS 105 in the Grand Scheme Semiconductor physics 1 week PN Junction BJT Physics Model 1 5 weeks MOSFET Physics Model 1 week Integrated Passives R C L 1 week Circuit analysis techniques 2 weeks Single Stage Amplifiers 2 weeks Feedback and Diff Amps 1 week Freq Resp of Single Stage Amps 1 week Multistage Amps 2 5 weeks Freq Resp of Multistage Amps 1 week 13 14 The First Integrated Circuits EECS 105 in the Grand Scheme Example Cell Phone Bipolar logic 1960 s ECL 3 input Gate Motorola 1966 15 Intel Pentium 4 Microprocessor 16 EECS 105 Emphasis in Analog 90nm CMOS technology 14 bit analog to digital converter 17 Y Chiu IEEE Int l Solid State Circuits Conference 2004 18 3 Transistors are Bricks SPICE Transistors are the building blocks bricks of the modern electronic world Example netlist Q1 1 2 0 npnmod R1 1 3 1k Vdd 3 0 3v tran 1u 100u MOS Cap Analog Amp Digital Gate Variable Capacitor stimulus netlist response SPICE Simulation Program with IC Emphasis Invented at Berkeley released in 1972 PN Junction Focus of course DC Find the DC operating point of a circuit TRAN Solve the transient response of a circuit solve a system of generally non linear ordinary differential equations via adaptive time step solver AC Find steady state response of circuit to a sinusoidal excitation Understand device physics Build analog circuits Learn electronic prototyping and measurement Learn simulations tools such as SPICE SPICE 19 BSIM 20 Lecture Outline Transistors are complicated Accurate sim requires 2D or 3D numerical sim TCAD to solve coupled PDEs quantum effects electromagnetics etc This is slow a circuit with one transistor will take hours to simulation Semiconductors Si Diamond Structure Bond Model Intrinsic Carrier Concentration Doping by Ion Implantation How do you simulate large circuits 100s 1000s of transistors Use compact models In EECS 105 we will derive the so called level 1 model for a MOSFET The BSIM family of models are the industry standard models for circuit simulation of advanced process transistors BSIM Berkeley Short Channel IGFET Model 21 22 Electronic Properties of Silicon Resistivity for a Few Materials Pure copper 273K 1 56 10 6 ohm cm Silicon is in Group IV atomic number 14 Pure copper 373 K 2 24 10 6 ohm cm Pure germanium 273 K Pure germanium 500 K Pure water 291 K 200 ohm cm 12 ohm cm 2 5 107 ohm cm Atom electronic structure 1s22s22p63s23p2 Crystal electronic structure 1s22s22p63 sp 4 Seawater 25 ohm cm What gives rise to this enormous range Why are some materials semi conductive Why the strong temp dependence Diamond lattice with 0 235 nm bond length Very poor conductor at room temperature why 1s 2 2s 2 2p 6 23 3sp 4 Hybridized State 24 4 The Diamond Structure Periodic Table of Elements 3sp tetrahedral bond o 2 35 A o 5 43 A 25 States of an Atom Energy Band Diagram E3 E2 Energy 26 The gap between the conduction and valence band determines the conductive properties of the material Metal Conduction Band Allowed Energy Levels Forbidden Band Gap E1 Atomic Spacing negligible band gap or overlap Lattice Constant Quantum Mechanics The allowed energy levels for an atom are discrete 2 electrons with opposite spin can occupy a state When atoms are brought into close contact these energy levels split If there are a large number of atoms the discrete energy levels form a continuous band Valence Band Conduction Band Insulator band gap large band gap 8 eV Valence
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