1 of 6Experiment 10 Bipolar Junction Transistor CharacteristicsW.T. Yeung, W.Y. Leung, and R.T. HoweUC Berkeley EE 105Spring 20051.0 ObjectiveIn this lab, you will determine the IC - VCE characteristics of a BJT in several regions of operation. The large signal parameters will be determined experimentally. You will then derive the large signal model for the BJT in each region of operation. The key concepts introduced in this laboratory are:• The 4 regions of operations of the BJT• Determination of the region of operation based on the voltages VBE and VCE• Determination of large signal parameters such as β and VA.2.0 Prelab• H & S Chapters 7.1 - 7.4• Write down the complete Ebers-Moll Equations• Write down the simplified equations appropriate for the forward active and reverse active regions. From these equations, derive the Ebers-Moll large-signal model for each region of operation.3.0 ProcedureShown below is the complete Ebers-Moll model for the bipolar junction transistor. You will find all the parameters for this model in this experiment. You might find it useful to tabulate your data into a table such as Table1.Procedure2 of 6 Experiment 10 Bipolar Junction Transistor CharacteristicsFIGURE 1. Ebers-Moll Model for the npn Bipolar Junction Transistor3.1 Circuit Measurements1. Connect the M3500 (NPN1)on Lab Chip 2 as shown in Fig. 2. Let RC =5kΩ, RB = 1 MΩ, and RE = 100 Ω. Let VCC = 5V. Table 1: Regions of Operations and MeasurementsForward ActiveSaturation CutoffReverse ActiveVBEVBCIBICβ NA NAα NA NAIES or ICSNA NAαFIFαRIR[ICS][IES]CEBIBIRIEIFICProcedureExperiment 10 Bipolar Junction Transistor Characteristics 3 of 6FIGURE 2. BJT Test Circuit2.Increase VBB until IC = 0.5mA. Measure VBE and VBC. What region of operation is the transistor operating in? Measure IB, the base current and compare that to the collec-tor current. What is β? Once β is found, you can calculate α.It is often more convenient and sometimes, more accurate to measure the current by measuring the voltage across the resistor through which the current flows, using Ohm’s Law.3. Draw the simplified Ebers-Moll model for the BJT in this region of operation and find its parameters.4. While keeping the voltage VBB constant at 4V, vary VCC from 0V to 6V. This should take the transistor through 2 regions of operation. Note the base current IB. Make a careful plot of IC vs. VCE and the noise in the IC measurement. You will need to take many points at low VCE due to the steep slope of the curve. Note VBE , VBC, and IB at saturation. Draw the simplified Ebers-Moll model for the BJT in the saturation region. From this plot, find the early voltage VA. Does the Ebers-Moll model predict the correct behavior?5. Change VBB to -3V (VCC remains at 5 V) How much collector current flows? Does it agree with the Ebers-Moll model? What region of operation is this? What is VBE and VBC? Draw the simplified Ebers-Moll model for the BJT in this region of operation.Q1VBBREVCCRBRCIEIBICCOLLECTORPIN 20BASEPIN 19EMITTERPIN 18PIN 28GNDPIN 14Lab TipProcedure4 of 6 Experiment 10 Bipolar Junction Transistor Characteristics6.Interchange the collector and the emitter and let VBB be 4V. Measure VBE and VBC. What region of operation is the transistor operating in? Measure IB, the base current and compare that to the collector current. What is β? Draw the simplified Ebers-Moll model for the BJT in this region and find its parameters3.2 HP-4155 Measurements1. Load the program PBJT6 into the HP-41552. Place the Lab Chip 2 into the test fixture and connect with the SMUs.3. At the Source Setup Screen, change the start value of the base current to be the base current you found in procedure 3.1.4. Strictly speaking, the base current is not a constant in procedure 3.14.4. Run the test program and note the curves traced out by the 4155.5. Using the marker and cursor, find the Early voltage, VA for the curve corresponding to the base current you observed in procedure 3.1.4. FIGURE 3. Sample IC - VCE characteristics for a bipolar junction transistor. (extrapolated line in dark)6.You can find β by comparing the collector current with its corresponding base cur-rent. Find the value of β for the base current you found in procedure 3.1.4. How do they compare?7. Get a hardcopy of the IC - VCE curve.8. Interchange the connection for the collector and emitter and repeat the experiment. Find βR and VAR. Note: you will need to change the scaling manually to see the curves.9. Get a hardcopy of the IC - VCE curve.Optional ExperimentExperiment 10 Bipolar Junction Transistor Characteristics 5 of 610. Make hardcopies of both measurements. How do they compare?3.3 Diode Characteristics of BJT1. Load the default diode program for HP-4155.2. Connect the base and the emitter od Lab Chip 2 to the appropriate SMUs as described by the SOURCE SETUP SCREEN.3. The program will plot the current as a function of the base-emitter voltage on a log scale. Using the equation for a forward biased diode, determine IES.4. Interchange the connections and repeat the experiment to find ICS.5. Get a hardcopyFIGURE 4. BJT circuit for SPICE simulation4.0 Optional Experiment4.1 Circuit SimulationPerform a SPICE analysis using the parameters you found. The circuit is shown above. You will need to perform a nested sweep. VCC will vary from 0 to 5 V and IB will vary with the initial base current from procedure 3.1.4 in steps of 10 µA. Plot IC vs. VCE. Fill in the parameters for the M3500 in the data sheet in the Appendix.Using the program PBJT and PDIODE, modify them to find the parameters for the pnp transistor M3511 (PNP)on Lab Chip 1 (collector = pin 27, base = pin 26, emitter = pin 25).Q1VCC IBAppendix6 of 6 Experiment 10 Bipolar Junction Transistor Characteristics5.0 AppendixFIGURE 5. Data Sheet for M3500 and
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