Berkeley ELENG 105 - Experiment 3 - Bipolar Junction Transistor Characterization (3 pages)

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Experiment 3 - Bipolar Junction Transistor Characterization



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Experiment 3 - Bipolar Junction Transistor Characterization

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Pages:
3
School:
University of California, Berkeley
Course:
Eleng 105 - Microelectronic Devices and Circuits
Microelectronic Devices and Circuits Documents

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UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE105 Lab Experiments Experiment 3 Bipolar Junction Transistor Characterization 1 Objective The BJT was invented in 1948 by William Shockley at Bell Labs and became the first mass produced transistor Having a good grasp of the physics of the BJT is key to understanding its operation and applications In this lab we will explore the BJT s four operation regions and determine its characteristic values DC current gain and Early voltage VA The transistor we will use is the 2N4401 an NPN device It is strongly suggested that you read and understand the section on BJT physics before beginning this experiment 2 Materials Component 2N4401 NPN BJT 1 M resistor 5 k resistor 100 resistor Quantity 2 1 1 1 Table 1 Components used in this lab 3 Procedure 3 1 Determining the Region of Operation 1 Set up the circuit shown in Figure 1 with RB 1 M RC 5 k and RE 100 Set VCC to 5 V 2 Increase VBB until IC 0 5 mA Measure VBE and VBC What is the region of operation of the transistor Warning Never set VBE higher than 5 V for any of the transistors we use Doing so will permanently damage the transistor 3 Now measure IB What is the value of 4 From the value found above calculate Use to calculate IE then measure IE and check if the values agree 5 Let s examine the temperature dependence of collector current Put two fingers around Q1 to heat it then measure IB and IC have your partner heat the BJT while you measure the currents if you re having trouble doing both at the same time How does IC compare to the value you measured before you heated the transistor 1 3 2 PROCEDURE RC IC IB RB VBB VCC RE IE Figure 1 BJT measurement setup for this lab 6 Explain using the equation you know for collector current how you d expect IC to vary with temperature Does this agree with your experimental results If not explain why this might be the case Hint IS depends on the intrinsic carrier



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