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UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE105 Lab Experiments Prelab 3 Bipolar Junction Transistor Characterization Name Lab Section 1 For the NPN device shown below in Figure 1 fill in IC IB and IE next to the current arrows Figure 1 A simple NPN device for warming up 2 What is in terms of IC and IB What is in terms of IC and IE Express in terms of IC IB IC IE 3 SPICE ICC VBB VCC Figure 2 Circuit to simulate in SPICE Write a SPICE netlist for the BJT test circuit shown in Figure 2 Refer to the HSPICE Tutorial if you have trouble with SPICE Use the 2N4401 SPICE model provided on the course website 1 2 Using the dc command sweep VCC from 0 V to 5 V in 0 01 V increments and step VBB from 0 6 V to 0 7 V in 0 025 V increments Run the simulation and check the output file for any errors If there are no errors plot ICC versus VCC and print out a copy of the plot Note If you notice that ICC is negative use Awaves to plot the absolute value of ICC ICC appears to be negative because SPICE defines ICC to be going out of the BJT 4 The configuration shown below in Figure 3 is known as the Darlington pair Assume Q1 has a DC current gain of 1 and Q2 has a DC current gain of 2 Derive the overall current gain tot IC2 IB1 as a function of 1 and 2 Do not neglect any currents IB1 Q1 IC2 Q2 Figure 3 Darlington configuration tot


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Berkeley ELENG 105 - Prelab 3: Bipolar Junction Transistor Characterization

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