EE143 S06 Lecture 28 Trends of IC Microfabrication 2001 Electronic End Equipment 879B Semiconductors SEMI MEMBERSHIP Semiconductor Equipment 139B 28B Estimate 2004 990B 218B 46B Materials 21B 28B Source SEMI SIA IC Insights Rev January 14 2002 Professor N Cheung U C Berkeley 1 EE143 S06 Professor N Cheung U C Berkeley Lecture 28 2 EE143 S06 Professor N Cheung U C Berkeley Lecture 28 3 EE143 S06 Lecture 28 SIA roadmap Memory and Logic Technology Requirements Year of First Product Shipment Technology Generation 1999 180 nm 2001 150 nm 2003 130 nm 2006 100 nm 2009 70 nm 2012 50 nm Min Logic Vdd V 1 81 5 1 51 2 1 51 2 1 20 9 0 90 6 0 60 5 Tox Equivalent nm 3 4 2 3 2 3 1 5 2 1 5 1 0 Equivalent Maximum E field MV cm 5 5 5 5 5 5 Nominal Ion 25oC mA mm NMOS PMOS 600 2 80 600 2 80 600 2 80 600 2 80 600 2 80 600 2 80 S D Extension Junction Depth Nominal nm 36 72 30 60 26 52 20 40 15 30 10 20 Professor N Cheung U C Berkeley 4 EE143 S06 Professor N Cheung U C Berkeley Lecture 28 5 EE143 S06 Lecture 28 Another Perspective on Moore s Law we are already producing 1018 transistors per year Enough to supply every ant on the planet with ten transistors Twenty years from now if the trend continues there will be more transistors than there will be cells in the total number of human bodies on Earth Professor N Cheung U C Berkeley 6 EE143 S06 Lecture 28 Channel Engineering Professor N Cheung U C Berkeley 7 EE143 S06 Lecture 28 Gate Stack Technology Equivalent Oxide Thickness Tox eq Qs Materials high k dielectric Ta205 gives lower electrical thickness BZT Al2O3 Cox Professor N Cheung U C Berkeley X ox 8 EE143 S06 Professor N Cheung U C Berkeley Lecture 28 9 EE143 S06 Lecture 28 High K dielectric by Atomic Layer Deposition Self limiting surface reactions of suitable precursor compounds A and B which form the desired product S in a binary reaction cycle consisting of two sequential half reactions For an extensive list of precursors see Ritala and Leskela Handook of Thin Film Materials Vol 1 Chap 2 2002 Professor N Cheung U C Berkeley 10 EE143 S06 Lecture 28 Elevated Source Drain Professor N Cheung U C Berkeley 11 EE143 S06 Professor N Cheung U C Berkeley Lecture 28 12 EE143 S06 Professor N Cheung U C Berkeley Lecture 28 13 EE143 S06 Lecture 28 Thin Body MOSFET Tox 2 nm Lgate 25 nm Vdd 1 V Thin body to control shortchannel effects Elevated S D to reduce Rsd Ids vs Vgs 1 E 03 1 E 04 log Id A um 1 E 05 1 E 06 Tsi 25A 1 E 07 Tsi 50A 1 E 08 Tsi 75A 1 E 09 tsi 100A 1 E 10 Professor N Cheung U C Berkeley 9 0 75 0 6 0 45 0 3 0 15 0 0 1 E 11 Vgs Volts 14 EE143 S06 Lecture 28 Dual Gate MOSFET Professor N Cheung U C Berkeley 15 EE143 S06 Lecture 28 Fin FET Scanning Electron Micrograph 20 nm Gate Drain 10 nm 15 nm FinFET Source Huang et al IEDM 1999 Professor N Cheung U C Berkeley 16 EE143 S06 Lecture 28 1 Four stress techniques dual stress liners stress memorization SM and an embedded SiGe S D were fully integrated on a partially depleted SOI substrate Source IBM and AMD Professor N Cheung U C Berkeley 17 EE143 S06 Professor N Cheung U C Berkeley Lecture 28 18 EE143 S06 Professor N Cheung U C Berkeley Lecture 28 19 EE143 S06 Lecture 28 Candidates to replace the CMOS switch after 2020 Source ITRS Professor N Cheung U C Berkeley 20 EE143 S06 Lecture 28 Interesting Facts about Chip Manufacturing A typical 2 gram silicon chip requires 1 6 kilograms of fossil fuel 72 grams of chemicals and 32 kilograms of water to manufacture To make the high grade silicon needed for the chips requires 160 times the energy used to produce raw silicon This accounts for about half of the total energy used by the chip Only a quarter is consumed during its processing life Because a chip s components are so tiny and precisely engineered far more materials such as fuels and solvents are needed for their manufacture than for more traditional goods The mass of these secondary materials outweighs the product by a factor of 600 In contrast making a typical car requires only about twice its weight in fossil fuels Williams E D Ayres R U Heller M The 1 7 kilogram microchip energy and material use in the production of semiconductor devices Environmental Science and Technology Published online 2002 Professor N Cheung U C Berkeley 21 EE143 S06 Lecture 28 Environmental Impact of the Semiconductor Industry Impact per square inch of Si Output from the Fab Liquid Waste Hazardous Waste Toxic Releases Professor N Cheung U C Berkeley 75 Gal in 2 0 1 Kg in 2 0 01 Kg in 2 Input to the Fab Water Electricity Chemicals 30 gal in 2 10 KWhr in 2 0 2 kg in 2 22 EE143 S06 Lecture 28 Download from www icknowledge com for full color page Professor N Cheung U C Berkeley 23
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