1Professor N Cheung, U.C. BerkeleyLecture 28EE143 S06Trends of IC MicrofabricationMaterialsSemiconductorEquipmentSemiconductorsSemiconductorsElectronic End EquipmentElectronic End EquipmentSource: SEMI, SIA, IC Insights; Rev. January 14, 2002SEMIMEMBERSHIP$990B2001Estimate2004$21B$28B$139B$879B$28B$46B$218B2Professor N Cheung, U.C. BerkeleyLecture 28EE143 S063Professor N Cheung, U.C. BerkeleyLecture 28EE143 S064Professor N Cheung, U.C. BerkeleyLecture 28EE143 S06Year of First Product ShipmentTechnology Generation1999180nm2001150nm2003130nm2006100nm200970nm201250nmMin. Logic Vdd(V) 1.8-1.51.5-1.21.5-1.21.2-0.90.9-0.60.6-0.5ToxEquivalent (nm) 3-4 2-3 2-3 1.5-2 <1.5 <1.0Equivalent Maximum E-field (MV/cm)5 5 5 >5 >5 >5Nominal Ion@ 25oC (mA/mm) (NMOS/PMOS)600/280600/280600/280600/280600/280600/280S/D Extension Junction Depth, Nominal (nm)36-72 30-60 26-52 20-40 15-30 10-20SIA roadmapMemory and Logic Technology Requirements5Professor N Cheung, U.C. BerkeleyLecture 28EE143 S066Professor N Cheung, U.C. BerkeleyLecture 28EE143 S06… we are already producing 1018transistors per year. Enough to supply every ant on the planet with ten transistors. Twenty years from now, if the trend continues, there will be more transistors than there will be cells in the total number of human bodies on Earth.Another Perspective on Moore’s Law7Professor N Cheung, U.C. BerkeleyLecture 28EE143 S06Channel Engineering8Professor N Cheung, U.C. BerkeleyLecture 28EE143 S06Equivalent Oxide ThicknessTox(eq)Qs→ high k-dielectricgives lower electrical thickness.oxoxXCε∝Gate Stack TechnologyMaterials:Ta205BZTAl2O39Professor N Cheung, U.C. BerkeleyLecture 28EE143 S0610Professor N Cheung, U.C. BerkeleyLecture 28EE143 S06Self-limiting surface reactions of suitable precursor compounds A and B, which form the desired product S in a binary reaction cycle consisting of two sequential half-reactions.High-K dielectric by Atomic Layer DepositionFor an extensive list of precursors,see Ritala and Leskela, Handook of Thin FilmMaterials, Vol.1, Chap 2 (2002)11Professor N Cheung, U.C. BerkeleyLecture 28EE143 S06Elevated Source/Drain12Professor N Cheung, U.C. BerkeleyLecture 28EE143 S0613Professor N Cheung, U.C. BerkeleyLecture 28EE143 S0614Professor N Cheung, U.C. BerkeleyLecture 28EE143 S06Thin-Body MOSFET•Tox= 2 nm•Lgate= 25 nm•Vdd= 1 VIds vs. Vgs1.E-111.E-101.E-091.E-081.E-071.E-061.E-051.E-041.E-0300.150.30.450.60.750.9Vgs (Volts)log Id (A/um)Tsi=25ATsi=50ATsi=75Atsi=100A• Thin body to control short-channel effects• Elevated S/D to reduce Rsd15Professor N Cheung, U.C. BerkeleyLecture 28EE143 S06Dual Gate MOSFET16Professor N Cheung, U.C. BerkeleyLecture 28EE143 S06Fin-FETHuang et al, IEDM, 1999Scanning Electron MicrographGateSourceDrain20 nm10 nm15 nm FinFETScanning Electron MicrographGateSourceDrainScanning Electron MicrographGateSourceDrain20 nm20 nm10 nm10 nm15 nm FinFET17Professor N Cheung, U.C. BerkeleyLecture 28EE143 S061. Four stress techniques — dual stress liners, stress memorization (SM) and an embedded SiGe S/D — were fully integrated on a partially depleted SOI substrate. (Source: IBM and AMD)18Professor N Cheung, U.C. BerkeleyLecture 28EE143 S0619Professor N Cheung, U.C. BerkeleyLecture 28EE143 S0620Professor N Cheung, U.C. BerkeleyLecture 28EE143 S06Candidates to replace the CMOS switch (after 2020)Source: ITRS21Professor N Cheung, U.C. BerkeleyLecture 28EE143 S06Williams, E. D., Ayres, R. U. & Heller, M. The 1-7 kilogram microchip: energy and material use in the production of semiconductor devices. Environmental Science and Technology, Published online (2002).Interesting Facts about Chip Manufacturing• A typical 2-gram silicon chip requires 1.6 kilograms of fossil fuel, 72 grams of chemicals and 32 kilograms of water to manufacture.• To make the high-grade silicon needed for the chips requires 160 times the energy used to produce raw silicon. This accounts for about half of the total energy used by the chip. Only a quarter is consumed during its processing life.• Because a chip's components are so tiny and precisely engineered, far more materials, such as fuels and solvents, are needed for theirmanufacture than for more traditional goods.• The mass of these secondary materials outweighs the product by afactor of 600. In contrast, making a typical car requires only about twice its weight in fossil fuels.22Professor N Cheung, U.C. BerkeleyLecture 28EE143 S06Environmental Impact of the Semiconductor IndustryOutput from the Fab Input to the Fab Liquid Waste 75 Gal/in^2 Water 30 gal/in^2 Hazardous Waste 0.1 Kg/in^2 Electricity 10 KWhr/in^2 Toxic Releases 0.01 Kg/in^2 Chemicals 0.2 kg/in^2 Impact per square inch of Si23Professor N Cheung, U.C. BerkeleyLecture 28EE143 S06Download from www.icknowledge.com for full color
View Full Document
Unlocking...