TSUPREM4 Process Simulation Results for EE143 MOSFET Device Fall 2002 In courtesy of Daewon Ha EE143 Microfabrication Week 1 Fall 2002 Initial 3 100 WF Si substrate EE143 Microfabrication Week 1 Fall 2002 Boron Implantation 11B 3 0x1012 cm 2 60KeV RP 0 2 m Si substrate EE143 Microfabrication Week 2 Fall 2002 Field Oxidation 1050C 5 70 min dry wet O2 SiO2 5200 A Si substrate EE143 Microfabrication Week 2 Fall 2002 Substrate Doping Concentration after Field Oxidation SiO2 5200 A Si substrate EE143 Microfabrication Week 3 Fall 2002 Active Formation 1 PR Coating PR SiO2 5200 A Si substrate EE143 Microfabrication Week 3 Fall 2002 Active Formation 2 PR Expose Develop PR PR SiO2 5200 A Si substrate EE143 Microfabrication Week 3 Fall 2002 Active Formation 3 SiO2 Wet Etching PR PR SiO2 5200 A Si substrate EE143 Microfabrication Week 3 Fall 2002 Active Formation 4 PR Ashing SiO2 5200 A Si substrate Field Active Region Field EE143 Microfabrication Week 4 Fall 2002 Gate Oxidation Tox 720 A Si substrate Field Oxide Gate Oxide EE143 Microfabrication Week 4 Fall 2002 Substrate Doping Concentration after Gate Oxidation Si substrate EE143 Microfabrication Week 5 Fall 2002 Gate Poly silicon Deposition Tpoly 3500 A Si substrate EE143 Microfabrication Week 6 Fall 2002 Gate Formation 1 PR Coating PR Poly Si 3500 A SiO2 5200 A Si substrate EE143 Microfabrication Week 6 Fall 2002 Gate Formation 2 Expose Develop PR Poly Si 3500 A SiO2 5200 A Si substrate EE143 Microfabrication Week 6 Fall 2002 Gate Formation 3 Poly Si Etch PR Poly Si 3500 A SiO2 5200 A Si substrate EE143 Microfabrication Week 6 Fall 2002 Gate Formation 4 Gate Ox Etch PR Poly Si 3500 A SiO2 5200 A Si substrate EE143 Microfabrication Week 6 Fall 2002 Gate Formation 5 PR Ashing PR Poly Si 3500 A SiO2 5200 A Si substrate EE143 Microfabrication Week 7 Fall 2002 N S D Formation Interlayer Oxidation ILD Oxide 2000A Gate N S D p n junction P substrate EE143 Microfabrication Week 7 Fall 2002 Substrate Doping Concentration after S D Drive ILD Oxidation N S D p n junction Xj 1 1 m P substrate EE143 Microfabrication Week 8 Fall 2002 Contact Formation 1 PR Coating P substrate EE143 Microfabrication Week 8 Fall 2002 Contact Formation 2 Expose Develop ILD Oxide 2000A P substrate EE143 Microfabrication Week 8 Fall 2002 Contact Formation 3 Oxide Etching ILD Oxide 2000A P substrate EE143 Microfabrication Week 8 Fall 2002 Contact Formation 4 PR Strip Contact hole P substrate EE143 Microfabrication Week 9 Fall 2002 Metal Al Deposition Al 8000A P substrate EE143 Microfabrication Week 10 Fall 2002 Metal Al Formation 1 PR Coating Al 8000A P substrate EE143 Microfabrication Week 10 Fall 2002 Metal Al Formation 2 Expose Develop Al 8000A P substrate EE143 Microfabrication Week 10 Fall 2002 Metal Al Formation 3 Al Etching Al 8000A P substrate EE143 Microfabrication Week 10 Fall 2002 Metal Al Formation 4 PR Strip Al 8000A P substrate EE143 Microfabrication Week 10 Fall 2002 Cross section of NMOS Al Gate N S D Field Ox N S D ILD Oxide P substrate READY FOR CHARACTERIZATION
View Full Document
Unlocking...