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Berkeley ELENG 143 - TSUPREM4 Process Simulation Results for EE143 MOSFET Device

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TSUPREM4 Process Simulation Results for EE143 MOSFET DeviceFall 2002In courtesy of Daewon HaSi substrateInitial 3” <100> WFEE143 Microfabrication Week 1, Fall 2002Boron Implantation(11B, 3.0x1012cm-2, 60KeV)RP~ 0.2 µmSi substrateEE143 Microfabrication Week 1, Fall 2002Si substrateField Oxidation (1050C, 5-70 min, dry-wet O2)SiO2 (~5200 A)EE143 Microfabrication Week 2, Fall 2002Si substrateSubstrate Doping Concentration (after Field Oxidation )SiO2 (~5200 A)EE143 Microfabrication Week 2, Fall 2002Si substrateActive Formation1.PR CoatingSiO2 (~5200 A)PREE143 Microfabrication Week 3, Fall 2002Si substrateActive Formation2.PR Expose & DevelopSiO2 (~5200 A)PRPREE143 Microfabrication Week 3, Fall 2002Si substrateActive Formation3.SiO2 Wet EtchingSiO2 (~5200 A)PRPREE143 Microfabrication Week 3, Fall 2002Si substrateActive Formation4.PR AshingSiO2 (~5200 A)Active RegionFieldFieldEE143 Microfabrication Week 3, Fall 2002EE143 Microfabrication Week 4, Fall 2002Si substrateGate OxidationGate OxideFieldOxideTox (~720 A)EE143 Microfabrication Week 4, Fall 2002Substrate Doping Concentration (after Gate Oxidation )Si substrateEE143 Microfabrication Week 5, Fall 2002Gate Poly-silicon DepositionTpoly (~3500 A)Si substrateEE143 Microfabrication Week 6, Fall 2002Gate Formation1. PR CoatingSi substratePRSiO2 (~5200 A)Poly Si (3500 A)EE143 Microfabrication Week 6, Fall 2002Gate Formation2.Expose & DevelopSi substratePRSiO2 (~5200 A)Poly Si (3500 A)EE143 Microfabrication Week 6, Fall 2002Gate Formation3.Poly-Si EtchSi substratePRSiO2 (~5200 A)Poly Si (3500 A)EE143 Microfabrication Week 6, Fall 2002Gate Formation4.Gate-Ox EtchSi substratePRSiO2 (~5200 A)Poly Si (3500 A)EE143 Microfabrication Week 6, Fall 2002Gate Formation5. PR AshingSi substratePRSiO2 (~5200 A)Poly Si (3500 A)EE143 Microfabrication Week 7, Fall 2002N+ S/D Formation & Interlayer OxidationP-substrateGateILD Oxide(~ 2000A)p-n junctionN+ S/DEE143 Microfabrication Week 7, Fall 2002P-substrateN+ S/DSubstrate Doping Concentration (after S/D Drive & ILD Oxidation )p-n junction(Xj~ 1.1 µm)EE143 Microfabrication Week 8, Fall 2002Contact Formation1. PR CoatingP-substrateEE143 Microfabrication Week 8, Fall 2002Contact Formation2. Expose & DevelopP-substrateILD Oxide (~ 2000A)EE143 Microfabrication Week 8, Fall 2002Contact Formation3. Oxide EtchingP-substrateILD Oxide (~ 2000A)EE143 Microfabrication Week 8, Fall 2002Contact Formation4. PR StripP-substrateContact holeEE143 Microfabrication Week 9, Fall 2002Metal (Al) DepositionAl (~ 8000A)P-substrateEE143 Microfabrication Week 10, Fall 2002Metal (Al) Formation1. PR CoatingP-substrateAl (~ 8000A)EE143 Microfabrication Week 10, Fall 2002Metal (Al) Formation2. Expose & DevelopP-substrateAl (~ 8000A)EE143 Microfabrication Week 10, Fall 2002Metal (Al) Formation3. Al EtchingP-substrateAl (~ 8000A)EE143 Microfabrication Week 10, Fall 2002Metal (Al) Formation4. PR StripP-substrateAl (~ 8000A)EE143 Microfabrication Week 10, Fall 2002Cross-section of NMOSP-substrateAl GateN+ S/DField OxILD OxideN+ S/DREADY FOR CHARACTERIZATIONREADY FOR


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Berkeley ELENG 143 - TSUPREM4 Process Simulation Results for EE143 MOSFET Device

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