Lab Report 2 Table of Contents I II III IV V Procedure 3 points Data 12 points Analysis 30 points Theory 35 points Discussion 20 points TOTAL 100 points This report will summarize characterization of your test structures The two purposes of characterization are to teach you how to use the equipment and techniques common to semiconductor device analysis and to compare the actual behavior of your devices with that predicted theoretically Each group of two or three students will submit one joint report Please follow the outline given in the table of contents above which will allow the TAs to grade the reports clearly based on the within section point values described below Working vs Non working devices We understand that some of your devices may not work for a variety of reasons If this is the case for your group you are allowed to borrow a wafer from other groups to get functioning device characteristics However if your devices do not display precisely the same characteristics as shown in the Device Characterization Outine do not panic Keep in mind that the point of this lab report is for you to compare your results to the reference and explore which fabrication steps might have caused that problem If particular devices do not work in your entire lab section s wafers please talk to your TA about the procedure to proceed with the parameter extractions and discussions for this report Report Submission date Thursday May 7 2009 last class day at the beginning of the class Please also submit an electronic copy to your teaching assistant by the same deadline There is a 10 point deduction per day for late reports 1 Tips for writing your report 1 The objective of your report is to convince the reader of the following You measured the data required You plotted the data correctly You extracted parameters from the plots You carried out accurate calculations and gave a convincing discussion of how the results of these calculations differ from theory and why 2 Your lab report MUST follow the structure given below even if you think you have a better plan for organizing your analysis stick to ours so that we may grade your efforts fairly Following the exact format will ensure fair grading You will be deducted 5 points if you do not within reason follow the given outline 3 Refer to the following documents on the lab website They can answer most of your questions Characterization Manual http www inst eecs berkeley edu ee143 fa05 lab device characterization pdf Chip Layout http www inst eecs berkeley edu ee143 fa05 lab mems html Process Flow http www inst eecs berkeley edu ee143 fa05 lab NMOS process flow pdf 4 MOST IMPORTANT When things don t turn out perfectly present a plausible explanation of why and where in the process things went wrong Also explain what should have happened and what you would have done Do not fudge data Well thought out explanations and insight into the problems in IC devices are worth more than perfect devices 5 Unlike Lab Report 1 this report does not need to be paper style Do answer the questions in complete sentences and follow all instructions related to figures tables etc 2 Report Sections Title Page Include course name and number semester lab section and group number member names lab GSI s name and professor s name Please insert this grading rubric at the bottom Part 1 Procedures Part 2 Data Part 3 Analysis Part 4 Theory Part 5 Discussion Total score 3 12 30 35 20 100 Contributions In this section you should list how each member contributed to each section of the report Each group member should have at least some contribution to every section Also include the following academic honesty page near the front of your report 3 EE143 Lab Report 2 Spring 2009 In signing below I attest to the fact that I have read and have adhered to the policies and guidelines discussed in the EECS Departmental Policy on Academic Dishonesty as found at http www inst eecs berkeley edu ee143 fa05 policy html Lab session Signature Name Print last first Department Signature Name Print last first Department Signature Name Print last first Department 4 I Procedures 3 points The measurements you are responsible for taking and analyzing are described in the Device Characterization page For each of the major device types resistor contact chain resistor diode MOSFET inverter and capacitors include a a top down picture of the device b a brief description of what stimulus was applied and what measurements were taken at each of the contact pads Note that for the MOSFET this will require at least two diagrams one Id Vds and one for Id Vg you generated for each device The diode will require two diagrams for forward bias and reverse bias For example the contact chain resistor would look like The drawings should be more heavily annotated that the ones in the lab manual but otherwise this section should be very brief II Data 12 points For each of the required devices extract the data and make plots of the relevant I V or C V curves Please do not just paste your raw data from ICS metrics You must correctly label axes and title each plot to specify the corresponding device number and the measurement which you performed For some devices you should have more than one measurement If you perform fits to your data in Part III you may include them here in these plots for brevity Measurements are split up into 2 groups by the kind of electrical equipment required 1 HP4155B Semiconductor Parameter Analyzer Required Devices 15 Total DEVICES 2a 2b Resistors 1 plot each total 2 plots 5 2c 2c Contact Chain Resistors 1 plot each total 2 plots 7 Diode 1 plot forward operation 1 plot reverse operation showing the breakdown region and breakdown voltage if measured total 2 plots 8a d MOSFETs of Varying Length Id Vds Vg 1 plot each total 4 plots Id Vg Vb 1 plot each total 4 plots Don t forget that you need to take Id Vd and Id Vg sweeps for ten 8d devices for yield calculations No need to show them here though 9a c MOSFETs of Varying Width Id Vds Vg 1 plot each total 4 plots Id Vg Vb 1 plot each total 4 plots 10 Large Area MOSFET Id Vds Vg 1 plot total 1 plot 11 Field Oxide MOSFET Id Vds Vg 1 plot total 1 plot 14 Inverter Vin vs Vout Vdd 2 HP4284A Precision LCR Meter 1 station EXPECTED total of 4 PLOTS Required Devices 3 Total 3 Field Oxide Capacitor Total 1 Plot 4 Gate Oxide Capacitor Light On Light Off Total 2 plots 5 Intermediate Oxide Capacitor Total 1 Plot 3 Measurement Issues Discuss the data obtained from any non
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