1 Lab Report 2 Table of Contents 1. Measurements (20 points) 2. Parameter Extraction (30 points) 3. Calculations (35 points) 4. Discussion (15 points) 5. MEMS discussion (5 points) [Bonus] 6. Device Discussion (5 points) [Bonus] TOTAL = 100 points (+ 10 points) This report will summarize characterization of your test structures. The two purposes of characterization are to teach you how to use the equipment and techniques common to semiconductor device analysis, and to compare the actual behavior of your devices with that predicted theoretically. Each group of two (or three) students will submit one joint report. Please follow the outline given in the table of contents above, which will allow the TAs to grade the reports clearly based on the within-section point values described below. Working vs. Non-working devices We understand that some of your devices may not work for a variety of reasons. If this is the case for your group, you are allowed to borrow a wafer from other groups to get functioning device characteristics. However, if your devices do not display precisely the same characteristics as shown in the Device Characterization Outine, do not panic. Keep in mind that the point of this lab report is for you to compare your results to the reference and explore which fabrication steps might have caused that problem. If particular devices do not work in your entire lab section’s wafers, please talk to your TA about the procedure to proceed with the parameter extractions and discussions for this report. Report Submission date Lab report 2 is due by 3pm on Friday, May 8, 2006. This is a firm deadline. Please turn in the report to Rosita in 253 Cory. Removed parts We removed some parts of the characterization to relieve you from being overwhelmed. Please know that your lab report doesn’t have to include the following devices: Capacitors (device #6); transistors (device #12, 13); Circuits (device#15, 16); MEMS (device #17,19, 20,21)2 1. Measurements (20 points): The measurements you are responsible for taking and analyzing, are described in the Device Characterization page. They can be split up into 2 groups by the kind of electrical equipment required: Grading for this section: 14 points for 34 plots, 3 points for correct labels and titles and 3 points for device diagrams. 1. HP4155B: Semiconductor Parameter Analyzer (3 stations): EXPECTED total of 24 PLOTS. Extract the data and make the plots for the: § Resistors (1 plot from each of devices #2 a and b) (1points) ( total 2 plots) § Contact-Chain Resistors (1 plot from each of devices #2 c and d) (1 point) (total 2 plots) § Diode (1 plot-forward (normal) operation only; 1 plot–reverse operation specifically showing the breakdown region and breakdown voltage—from device #7) (1point) (total 2 plots) § MOSFETs (4 plots—described at the Device Characterization page—from each of devices #8 b-d, and 3 plots from each of devices#9 a-c, and 1 plot from each of devices #10 and #11) (8.5points) (12 plots + 9 plots + 2 plots = total 23 plots) § Inverter (1 plot from device #14) (0.5point) 2. HP4284A: Precision LCR Meter (1 station): EXPECTED total of 4 PLOTS Extract the data and make the plots for the § Field Oxide Capacitor (1 plot from device #3), (0.5 points) § Gate Oxide Capacitor (2 plots from device #4—one each lights on/off), (1 point) § Intermediate Oxide Capacitor (1 plot from device #5) (0.5 point) § Remember to remove the intrinsic capacitance of the HP4284A and wires from your data before plotting! NOTE: Label ALL plots and indicate corresponding device number. NOTE: Correct labeling and giving title to plots (title should specify the corresponding device number clearly) will be worth 0.5 point for each device type (6major device types). NOTE: There is NO PARTIAL CREDIT for this because correct labeling means that ALL axes of a plot should have the correct labels. For each of the 6 major device types (resistor, contact-chain resistor, diode, MOSFET, and inverter), include a top down picture of the device, and a brief description of what (if any) stimulus was applied and what (if any) measurements were taken at each of the contact pads. Note that for the MOSFET, this will require three diagrams—one for each of the three plots you generated for each device. For example, the contact-chain resistor would look like:3 Again, each correctly labeled, titled device diagram will be worth 0.5 point. 2. Parameter Extraction (30 points) From the data taken above, find the following device parameters. Show all procedures and calculations and include a circuit representation of the device (no circuit for line widths). To make life easier, follow the hints at the Device Characterization page… I. Line Width and Misalignment 2 pts Measure the line widths on the test patterns for each lithography step. Create a table of all the line widths. Measure the misalignment for each lithography step (with precision, using the Verniers). (This section can basically be copied over from lab report 1, if a thorough job was done) You only need to provide tables one each for final line widths measurements (after etching) and misalignment for each layer (Vernier measurement value and calculated misalignment for each layer). Please do not provide any pictures. They carry no credit. II. Resistors (2a, b) 3 pts Extract the resistance of each structure. Use the final measured line width data (and therefore, the overetch/underetch data) from the above problem, to calculate the dimensions of the poly resistor, 2b. Calculate the sheet resistance for each structure. For 2a, use the junction depth value calculated in Lab Report 1 to determine the doping concentration and electron mobility from standard tables in Muller and Kamins. For the poly resistor 2b, calculate the polysilicon resistivity in (ohm-cm). If data was bad for your wafer and you used data from another wafer, explain why your devices did not work. III. Contact-chain resistors (2c, d) 3 pts Extract the resistance of each structure. Calculate the contact resistance for the contacts of each structure, using the sheet resistance values from the previous calculations section (resistors).4 If data was bad for your wafer and you used data from another wafer, explain why your devices did not work. IV. Capacitors 5 pts Field Ox Cap (3)—determine the capacitance in the accumulation region (close to
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