Lab Report 2Table of ContentsTOTAL = 100 pointsSummary of Device ParametersSummary of MOSFET ParametersLab Report 2Table of ContentsI. Procedure (3 points)II. Data (12 points)III. Analysis (30 points)IV. Theory (35 points)V. Discussion (20 points) TOTAL = 100 pointsThis report will summarize characterization of your test structures. The two purposes of characterization areto teach you how to use the equipment and techniques common to semiconductor device analysis, and tocompare the actual behavior of your devices with that predicted theoretically. Each group of two (or three)students will submit one joint report. Please follow the outline given in the table of contents above, whichwill allow the TAs to grade the reports clearly based on the within-section point values described below. Working vs. Non-working devicesWe understand that some of your devices may not work for a variety of reasons. If this is the case for yourgroup, you are allowed to borrow a wafer from other groups to get functioning device characteristics.However, if your devices do not display precisely the same characteristics as shown in the DeviceCharacterization Outine, do not panic. Keep in mind that the point of this lab report is for you to compareyour results to the reference and explore which fabrication steps might have caused that problem. Ifparticular devices do not work in your entire lab section’s wafers, please talk to your TA about the procedureto proceed with the parameter extractions and discussions for this report. Report Submission dateWill be announced.Please also submit an electronic copy to your teaching assistant by the same deadline.There is a 10 point deduction per day for late reports1Tips for writing your report1. The objective of your report is to convince the reader of the following: You measured the data required. You plotted the data correctly. You extracted parameters from the plots. You carried out accurate calculations and gave a convincing discussion of how the results ofthese calculations differ from theory, and why.2. Your lab report MUST follow the structure given below—even if you think you have a betterplan for organizing your analysis, stick to ours so that we may grade your efforts fairly.Following the exact format will ensure fair grading.You will be deducted 5 points if you do not (within reason) follow the given outline.3. Refer to the following documents on the lab website. They can answer most of your questions:Characterization Manual:http://www-inst.eecs.berkeley.edu/~ee143/fa05/lab/device_characterization.pdfChip Layouthttp://www-inst.eecs.berkeley.edu/~ee143/fa05/lab/mems.htmlProcess Flow:http://www-inst.eecs.berkeley.edu/~ee143/fa05/lab/NMOS-process-flow.pdf4. MOST IMPORTANT: When things don't turn out perfectly, present a plausible explanation ofwhy and where in the process, things went wrong. Also explain what should have happened andwhat you would have done. Do not fudge data. Well thought out explanations and insight intothe problems in IC devices are worth more than perfect devices.5. Unlike Lab Report 1, this report does not need to be paper-style. Do answer the questions incomplete sentences and follow all instructions related to figures, tables, etc.2Report Sections:Title PageInclude course name and number, semester, lab section and group number, member names, lab GSI's name, and professor's name. Please insert this grading rubric at the bottom:Part 1: Procedures /3Part 2: Data /12Part 3: Analysis /30Part 4: Theory /35Part 5: Discussion /20Total score /100ContributionsIn this section, you should list how each member contributed to each section of the report.Each group member should have at least some contribution to every section.Also, include the following academic honesty page near the front of your report.3EE143 Lab Report 2 - Spring 2009In signing below, I attest to the fact that I have read and have adhered to the policiesand guidelines discussed in the EECS Departmental Policy on Academic Dishonesty, as found at: http://www-inst.eecs.berkeley.edu/~ee143/fa05/policy.htmlLab session: ___________________________________________Signature: ____________________________Name (Print) ____________________ __________________________ (last) (first)Department____________________________________________Signature: ____________________________Name (Print) ____________________ __________________________ (last) (first)Department____________________________________________Signature: ____________________________Name (Print) ____________________ __________________________ (last) (first)Department____________________________________________4I. Procedures (3 points): The measurements you are responsible for taking and analyzing, are described in the Device Characterization page. For each of the major device types (resistor, contact-chain resistor, diode, MOSFET, inverter, and capacitors), include:(a) a top down picture of the device(b) a brief description of what stimulus was applied and what measurements were taken at each of the contact pads. Note that for the MOSFET, this will require at least two diagrams—one Id-Vds and one for Id-Vg you generated for each device. The diode will require two diagrams for forward bias and reverse bias. For example, the contact-chain resistor would look like: The drawings should be more heavily annotated that the ones in the lab manual, but otherwise, this section should be very brief. II. Data (12 points)- For each of the required devices, extract the data and make plots of the relevant I-V or C-V curves. Please do not just paste your raw data from ICS metrics. - You must correctly label axes and title each plot to specify the corresponding device number, and the measurement which you performed. For some devices, you should have more than one measurement.- If you perform fits to your data in Part III, you may include them here in these plots for brevity- Measurements are split up into 2 groups by the kind of electrical equipment required:1. HP4155B: Semiconductor Parameter Analyzer:Required Devices: (15 Total DEVICES)- [2a, 2b] Resistors: 1 plot each [total 2 plots]- [2c, 2c] Contact-Chain Resistors: 1 plot each [total
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