EE143 S05 Lecture 29 Trends of IC Microfabrication 2001 Electronic End Equipment 879B Semiconductors SEMI MEMBERSHIP Semiconductor Equipment 139B 28B Estimate 2004 990B 218B 46B Materials 21B 28B Source SEMI SIA IC Insights Rev January 14 2002 Professor N Cheung U C Berkeley 1 EE143 S05 Professor N Cheung U C Berkeley Lecture 29 2 EE143 S05 Professor N Cheung U C Berkeley Lecture 29 3 EE143 S05 Professor N Cheung U C Berkeley Lecture 29 4 EE143 S05 Lecture 29 SIA roadmap Memory and Logic Technology Requirements Year of First Product Shipment Technology Generation 1999 180 nm 2001 150 nm 2003 130 nm 2006 100 nm 2009 70 nm 2012 50 nm Min Logic Vdd V 1 81 5 1 51 2 1 51 2 1 20 9 0 90 6 0 60 5 Tox Equivalent nm 3 4 2 3 2 3 1 5 2 1 5 1 0 Equivalent Maximum E field MV cm 5 5 5 5 5 5 Nominal Ion 25oC mA mm NMOS PMOS 600 2 80 600 2 80 600 2 80 600 2 80 600 2 80 600 2 80 S D Extension Junction Depth Nominal nm 36 72 30 60 26 52 20 40 15 30 10 20 Professor N Cheung U C Berkeley 5 EE143 S05 Professor N Cheung U C Berkeley Lecture 29 6 EE143 S05 Lecture 29 Another Perspective on Moore s Law we are already producing 1018 transistors per year Enough to supply every ant on the planet with ten transistors Twenty years from now if the trend continues there will be more transistors than there will be cells in the total number of human bodies on Earth Professor N Cheung U C Berkeley 7 EE143 S05 Lecture 29 Channel Engineering Professor N Cheung U C Berkeley 8 EE143 S05 Lecture 29 Gate Stack Technology Equivalent Oxide Thickness Tox eq Qs Materials high k dielectric Ta205 gives lower electrical thickness BZT Al2O3 Cox Professor N Cheung U C Berkeley X ox 9 EE143 S05 Professor N Cheung U C Berkeley Lecture 29 10 EE143 S05 Professor N Cheung U C Berkeley Lecture 29 11 EE143 S05 Lecture 29 Step Coverage Al2O3 Professor N Cheung U C Berkeley 12 EE143 S05 Lecture 29 Elevated Source Drain Professor N Cheung U C Berkeley 13 EE143 S05 Professor N Cheung U C Berkeley Lecture 29 14 EE143 S05 Professor N Cheung U C Berkeley Lecture 29 15 EE143 S05 Professor N Cheung U C Berkeley Lecture 29 16 EE143 S05 Lecture 29 Thin Body MOSFET Tox 2 nm Lgate 25 nm Vdd 1 V Thin body to control shortchannel effects Elevated S D to reduce Rsd Ids vs Vgs 1 E 03 1 E 04 log Id A um 1 E 05 1 E 06 Tsi 25A 1 E 07 Tsi 50A 1 E 08 Tsi 75A 1 E 09 tsi 100A 1 E 10 Professor N Cheung U C Berkeley 9 0 75 0 6 0 45 0 3 0 15 0 0 1 E 11 Vgs Volts 17 EE143 S05 Lecture 29 Dual Gate MOSFET Professor N Cheung U C Berkeley 18 EE143 S05 Lecture 29 Fin FET Scanning Electron Micrograph 20 nm Gate Drain 10 nm 15 nm FinFET Source Huang et al IEDM 1999 Professor N Cheung U C Berkeley 19 EE143 S05 Lecture 29 Strained Silicon Professor N Cheung U C Berkeley 20 EE143 S05 Lecture 29 TEM micrographs of 45 nm p type and n type MOSFET Image courtesy of ScottThompson Intel Professor N Cheung U C Berkeley 21 EE143 S05 Lecture 29 New Technologies New Materials Copper Interconnects Silicon On Insulator SOI Low k Silicon Germanium SiGe Strained Silicon New Manufacturing and Fabrication Initiatives 300mm equipment Processing chemistries Alliances Advanced Process Control Integrated metrology Fabless Foundries New Circuits and Architectures System on Chip SOC Magnetoresistive RAM Double gate Transistors Carbon Nanotube Transistors Biological and Molecular Selfassembly New Packages Source FSI International Inc Professor N Cheung U C Berkeley Flip Chip Wafer Scale Packaging 3D System in a package 22 EE143 S05 Lecture 29 Environmental Impact of the Semiconductor Industry Impact per square inch of Si Output from the Fab Liquid Waste Hazardous Waste Toxic Releases Professor N Cheung U C Berkeley 75 Gal in 2 0 1 Kg in 2 0 01 Kg in 2 Input to the Fab Water Electricity Chemicals 30 gal in 2 10 KWhr in 2 0 2 kg in 2 23 EE143 S05 Lecture 29 Download from www icknowledge com for full color page Professor N Cheung U C Berkeley 24
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