1Professor N Cheung, U.C. BerkeleyLecture 29EE143 S05Trends of IC MicrofabricationMaterialsSemiconductorEquipmentSemiconductorsSemiconductorsElectronic End EquipmentElectronic End EquipmentSource: SEMI, SIA, IC Insights; Rev. January 14, 2002SEMIMEMBERSHIP$990B2001Estimate2004$21B$28B$139B$879B$28B$46B$218B2Professor N Cheung, U.C. BerkeleyLecture 29EE143 S053Professor N Cheung, U.C. BerkeleyLecture 29EE143 S054Professor N Cheung, U.C. BerkeleyLecture 29EE143 S055Professor N Cheung, U.C. BerkeleyLecture 29EE143 S05Year of First Product ShipmentTechnology Generation1999180nm2001150nm2003130nm2006100nm200970nm201250nmMin. Logic Vdd(V)1.8-1.51.5-1.21.5-1.21.2-0.90.9-0.60.6-0.5ToxEquivalent (nm) 3-4 2-3 2-3 1.5-2 <1.5 <1.0Equivalent Maximum E-field (MV/cm)5 5 5 >5 >5 >5Nominal Ion@ 25oC (mA/mm) (NMOS/PMOS)600/280600/280600/280600/280600/280600/280S/D Extension Junction Depth, Nominal (nm)36-72 30-60 26-52 20-40 15-30 10-20SIA roadmapMemory and Logic Technology Requirements6Professor N Cheung, U.C. BerkeleyLecture 29EE143 S057Professor N Cheung, U.C. BerkeleyLecture 29EE143 S05… we are already producing 1018transistors per year. Enough to supply every ant on the planet with ten transistors. Twenty years from now, if the trend continues, there will be more transistors than there will be cells in the total number of human bodies on Earth.Another Perspective on Moore’s Law8Professor N Cheung, U.C. BerkeleyLecture 29EE143 S05Channel Engineering9Professor N Cheung, U.C. BerkeleyLecture 29EE143 S05Equivalent Oxide ThicknessTox(eq)Qs→ high k-dielectricgives lower electrical thickness.oxoxXCε∝Gate Stack TechnologyMaterials:Ta205BZTAl2O310Professor N Cheung, U.C. BerkeleyLecture 29EE143 S0511Professor N Cheung, U.C. BerkeleyLecture 29EE143 S0512Professor N Cheung, U.C. BerkeleyLecture 29EE143 S05Step Coverage(Al2O3)13Professor N Cheung, U.C. BerkeleyLecture 29EE143 S05Elevated Source/Drain14Professor N Cheung, U.C. BerkeleyLecture 29EE143 S0515Professor N Cheung, U.C. BerkeleyLecture 29EE143 S0516Professor N Cheung, U.C. BerkeleyLecture 29EE143 S0517Professor N Cheung, U.C. BerkeleyLecture 29EE143 S05Thin-Body MOSFET•Tox= 2 nm•Lgate= 25 nm•Vdd= 1 VIds vs. Vgs1.E-111.E-101.E-091.E-081.E-071.E-061.E-051.E-041.E-0300.150.30.450.60.750.9Vgs (Volts)log Id (A/um)Tsi=25ATsi=50ATsi=75Atsi=100A• Thin body to control short-channel effects• Elevated S/D to reduce Rsd18Professor N Cheung, U.C. BerkeleyLecture 29EE143 S05Dual Gate MOSFET19Professor N Cheung, U.C. BerkeleyLecture 29EE143 S05Fin-FETHuang et al, IEDM, 1999Scanning Electron MicrographGateSourceDrain20 nm10 nm15 nm FinFETScanning Electron MicrographGateSourceDrainScanning Electron MicrographGateSourceDrain20 nm20 nm10 nm10 nm15 nm FinFET20Professor N Cheung, U.C. BerkeleyLecture 29EE143 S05Strained Silicon21Professor N Cheung, U.C. BerkeleyLecture 29EE143 S05TEM micrographs of 45 nm p-type and n-type MOSFET. Image courtesy of ScottThompson, Intel.22Professor N Cheung, U.C. BerkeleyLecture 29EE143 S05New Manufacturing and Fabrication Initiatives• 300mm equipment• Processing chemistries• Alliances• Advanced Process Control• Integrated metrology• Fabless - FoundriesNew Materials• Copper Interconnects• Silicon-On-Insulator (SOI)• Low-k• Silicon Germanium (SiGe)• Strained SiliconNew Packages• Flip Chip• Wafer Scale Packaging•3D• System in a packageNew Circuits and Architectures • System-on-Chip (SOC)• Magnetoresistive RAM• Double-gate Transistors• Carbon NanotubeTransistors• Biological and Molecular Self-assemblySource: FSI International, Inc.New Technologies23Professor N Cheung, U.C. BerkeleyLecture 29EE143 S05Environmental Impact of the Semiconductor IndustryOutput from the Fab Input to the Fab Liquid Waste 75 Gal/in^2 Water 30 gal/in^2 Hazardous Waste 0.1 Kg/in^2 Electricity 10 KWhr/in^2 Toxic Releases 0.01 Kg/in^2 Chemicals 0.2 kg/in^2 Impact per square inch of Si24Professor N Cheung, U.C. BerkeleyLecture 29EE143 S05Download from www.icknowledge.com for full color
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