Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science 6.012 Microelectronic Devices and Circuits Spring 2007 February 14, 2007 - Homework #1 Due - February 21, 2007 _____________________________________________________________ Problem 1 A piece of silicon is doped with Na = 2x1015 cm-3 and Nd = 1x1015 cm-3 a) What is the majority carrier? Is the silicon type n or type p? b) Find the electron and hole concentration and mobility at room temperature. c) We want increase the electron concentration to 1x1017 cm-3. What is the additional dopant type and concentration? What is the new electron mobility? Problem 2 A piece of silicon is doped with Nd = 1x1015 cm-3. Below is a table for the intrinsic electron concentration for three different temperatures. ni Temperature 1x1010 cm-3 300 K (room temp.) 1x1015 cm-3 600 K 1x1017 cm-3 1150 K Calculate the total hole and electron concentration for all three temperatures. Problem 3 Given a uniformly n-type ion-implanted layer with thickness t = 1 um and doping concentration Nd = 1017 cm-3. a) What is the sheet resistance? b) What is the resistance of the layout shown below? Assume that the contacts each contribute .65 squares. c) By adding additional dopants, we make a new n-type ion-implanted resistor with an average doping concentration Nd1 = 2x1017 cm-3 over the depth 0 < d < 0.5 µm and Nd2 = 1017 cm-3 over the depth 0.5 µm < d < 1 µm. Find the new sheet resistance.Problem 4 A slab of silicon has the following electron distribution. a) Assume thermal equilibrium. Plot the potential φ as a function of x. b) What is the electron diffusion current density? Hole diffusion current density? Assume Dn = 2 x Dp = 26 cm2/s c) The hole and electron diffusion current densities do not sum to zero; however, the silicon cannot have a net current since it is an open circuit. Explain what is happening. Silicon
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