MIT 6 012 - Study Guide (3 pages)

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Study Guide



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Study Guide

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School:
Massachusetts Institute of Technology
Course:
6 012 - Microelectronic Devices and Circuits
Microelectronic Devices and Circuits Documents

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MASSACHUSETTS INSTITUTE OF TECHNOLOGY Department of Electrical Engineering and Computer Science 6 012 Microelectronic Devices and Circuits Homework 6 Problem 1 You are given an npn bipolar transistor which has uniform doping concentrations NdE 1019 cm 3 NaB 1017 cm 3 NdC 1016 cm 3 Assume the base width is 1 m from the B E junction to the B C junction The area of the emitter and collector is 10 6 cm2 n 1000 cm2 V sec p 500 cm2 V sec Ignore the depletion region width of forward biased junctions a Given VBE 0 66V and VBC 3V sketch the minority carrier concentration vs x in all three regions of the device b Calculate xn and xp at the base collector junction c Find the emitter width WE such that F 200 d Find the collector width WC such that R 5 e Calculate IS 2 Problem 2 You are given the npn transistor with the parameters and operating point from Problem 1 above with the additional information that Van 20V a Find the transconductance gm b Find the input resistance r c Find the output resistance ro d What is the minority electron storage QNB e Find C f At what frequency does 1 j C r Problem 3 Silicon Germanium bipolar transistors were developed in the late 1980 s to improve the current gain F over that of conventional silicon transistors When the emitter is made of this material we can assume that the intrinsic carrier concentration in the emitter is reduced to109 cm 3 This transistor is biased in the forward active region and has a collector current IC 100 A Use the same dimensions and doping concentrations as Problem 1 for this problem a Calculate the new VBE such that IC 10 A b Find the forward active current gain F c Determine the base doping level that will yield the same value of F as the transistor would have if its emitter were silicon instead of SiGe Problem 4 Howe and Sodini P7 6 MIT OpenCourseWare http ocw mit edu 6 012 Microelectronic Devices and Circuits Spring 2009 For information about citing these materials or our Terms of Use visit http ocw mit edu terms



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