EECS 100 MultiSim Laboratory B Boser LAB REPORT Lab Session Name 1 SID Name 2 SID 1 Component characteristics Use MultiSim to produce a plot of the I V characteristics of a diode symbol for V 0 1V Use logarithmic spacing for the current right click the axis in the MultiSim plot window to set logarithmic spacing Suggestion use a voltage source in series with the diode as an ampere meter and plot its branch current Use your plot to determine by what amount the voltage across the diode must be increased to increase the current from 10 A to 100 A Simulated Value mV of 10 M It turns out that this value usually referred to by the term subthreshold slope has great importance for the power dissipation of electronic circuits it tells how well circuits can be turned off to conserve power The value obtained above from simulation is characteristic for transistors used today Finding new types of devices for which this value is lower is an area of intense research and opportunity for great fame and wealth Page 1 EECS 100 MultiSim Laboratory B Boser 2 Node voltage analysis Calculate the value of voltage Vx in the circuit below and use MultiSim to verify your result Calculated value for Vx V of 20 P Simulated value for Vx V of 10 M Vx 1k 4k 3k 5V 2k 4k 3mA Page 2 9k 2k EECS 100 MultiSim Laboratory B Boser SUGGESTIONS AND FEEDBACK Time for completing prelab Time for completing lab Please explain difficulties you had and suggestions for improving this laboratory Be specific e g refer to paragraphs or figures in the write up Explain what experiments should be added modified how or dropped Page 3 EECS 100 MultiSim Laboratory B Boser PRELAB SUMMARY Lab Session Name 1 SID Name 2 SID Summarize your prelab P results here and turn this in at the beginning of the lab session Problem 2 Result V Page 4
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