EECS 100 MultiSim Laboratory B. Boser Page 1 LAB REPORT Lab Session: Name 1: SID: Name 2: SID: 1. Component characteristics Use MultiSim to produce a plot of the I/V characteristics of a diode (symbol ) for V = 0 … 1V. Use logarithmic spacing for the current (right click the axis in the MultiSim plot window to set logarithmic spacing). Suggestion: use a voltage source in series with the diode as an “ampere meter” and plot its branch current. Use your plot to determine by what amount the voltage across the diode must be increased to increase the current from 10μA to 100μA? Simulated Value: _____ mV ___ of 10 M It turns out that this value (usually referred to by the term “subthreshold slope”) has great importance for the power dissipation of electronic circuits: it tells how well circuits can be turned off to conserve power. The value obtained above from simulation is characteristic for transistors used today. Finding new types of devices for which this value is lower is an area of intense research and opportunity for great fame and wealth!EECS 100 MultiSim Laboratory B. Boser Page 2 2. Node voltage analysis Calculate the value of voltage Vx in the circuit below and use MultiSim to verify your result. Calculated value for Vx: _____ V ___ of 20 P Simulated value for Vx: _____ V ___ of 10 M 5V1k2k3k 4k4k9k 2kVx3mAEECS 100 MultiSim Laboratory B. Boser Page 3 SUGGESTIONS AND FEEDBACK Time for completing prelab: Time for completing lab: Please explain difficulties you had and suggestions for improving this laboratory. Be specific, e.g. refer to paragraphs or figures in the write-up. Explain what experiments should be added, modified (how?), or dropped.EECS 100 MultiSim Laboratory B. Boser Page 4 PRELAB SUMMARY Lab Session: Name 1: SID: Name 2: SID: Summarize your prelab (P) results here and turn this in at the beginning of the lab session. Problem Result 2
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