Optical trapping and integration of semiconductor nanowire assemblies in waterOptical Tweezers PrinciplesTrapping ProcedureTrapping of a SnO2 NanoribbonApplications: 1. Construction of HeterosructuresApplications: 2. OthersScanning of GaN nanowire on HeLa CellSummaryOptical trapping and integration of semiconductor nanowire assemblies in waterPeter J. Pauzauskie, Aleksandra Radenovic, Eliane Trepagnier, Hari Shroff, Peidong Yang and Jan LiphardtNature Materials, Feb. 2006, Vol. 5Optical Tweezers PrinciplesRayleigh LimitParticle size << λParticle treated as a dipole in inhomogenous E-fieldMie LimitParticle size >> λParticles refract the light→ Change of momentum→ Equal and opposite momentumD.G. Grier, Nature 2003Trapping ProcedureTrapping of a SnO2 NanoribbonLaser SpotNanoribbonApplications:1. Construction of HeterosructuresGaN nanowire laser-fusedTo SnO2 nanoribbonConstruction of 3-dimensional structuresGold dropletsgeneratedfrom coverslipApplications:2. OthersGaN non-specificallyattached to HeLa cell membraneExcitation of fluorescent beadsBead TouchingThe nanoribbonBead 500nmaway from nanoribbonScanning of GaN nanowire on HeLa CellSummary•Advantages –Trapping of single nanowires of different material with diameters as small as 10 nm–Three dimensional assembly of nanowires•Limitations–Difficulty in trapping metallic nanowires–Small working area (100 μm×100 μm)–Large optical power density (107
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