Nanowire Size Dependency on TSNWFETIntroductionID-VG CharacteristicsCurrent DrivabilityShort Channel ControlCapacitanceMobilityConclusionNanowire Size Dependency on TSNWFETRef.: S. D. Suk et al., “Investigation of nanowire size dependency on TSNWFET”, IEDM Tech. Dig., pp. 891-894, 2007.Xin SunApril 16, 2008IntroductionGate-all-around nanowire MOSFET• High performance• Ideal gate controllabilitydNW splits from 0nm to 11nmID-VG CharacteristicsAs dNW decreases, • VTH increases due to conduction band increase in limited dimension of nanowire channel.• ION decreaseCurrent DrivabilitySurface and phonon scattering increaseShort Channel Control• Minority carriers can be easily trapped to gate oxide by larger vertical electric field on surface.• Influence of surface conditions to channel can be enhanced with smaller nanowire.Capacitance100x100 arraysVolume inversionMobilityRight part: volume inversion effect exceeds scattering effect.Left part: scatterings are dominant.Conclusion•Volume inversion is first confirmed by capacitance measurement on TSNWFET with various channel size.•4nm is the optimal channel
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