EE235 Carbon Nanotube Flash Memory DevicesMotivationMemories for MobilityFuture Perspectives of Non-volatile MemoryCNT- Memory - NanocrystalsCNT- Memory – Si/SiO2 interface trapsCNT Molecular MemoryReversible switching & Multi-bit Programming@ 4.2 KSlide 10Conclusionxlab.me.berkeley.eduxlab.me.berkeley.eduXlab Confidential – Internal OnlyEE235Carbon Nanotube Flash Memory DevicesVolker Sorgerxlab.me.berkeley.eduxlab.me.berkeley.edu2Xlab Confidential – Internal Only MotivationSymptomSymptomSourceSourceRobert Chau et. al, Intel Novel-Device-Group,Robert Chau et. al, Intel Novel-Device-Group,IEEE Nanotech.IEEE Nanotech. 2005 2005 G.; Fazio, A.; Mills, D.; Reaves B.G.; Fazio, A.; Mills, D.; Reaves B.Intel Technology J.Intel Technology J. Q4’97Q4’97xlab.me.berkeley.eduxlab.me.berkeley.edu3Xlab Confidential – Internal Only Memories for MobilityNon-volatile = low power neededNon-volatile = low power needed–power down to save powerpower down to save powerLow costLow cost–one memory for program & data storageone memory for program & data storage≠≠magnetic hard diskmagnetic hard diskSmall form factor & light in weightSmall form factor & light in weightxlab.me.berkeley.eduxlab.me.berkeley.edu4Xlab Confidential – Internal Only Future Perspectives of Non-volatile Memory Molecular Tunnel(HP)FeRAMCNT based(Nantero Inc)Resistance PolymerProgrammableMetallization cellOUMMRAM?xlab.me.berkeley.eduxlab.me.berkeley.edu5Xlab Confidential – Internal Only CNT- Memory - Nanocrystals‘‘0’0’‘‘1’1’Y. Zhang, APL, 2005 Y. Zhang, APL, 2005 Fit to Fit to =800s @ 300K=800s @ 300Ktox=5nmtox=5nmIIddVVggxlab.me.berkeley.eduxlab.me.berkeley.edu6Xlab Confidential – Internal Only CNT- Memory – Si/SiO2 interface trapsM. Radosavljevic, Nano Lett., 2002 M. Radosavljevic, Nano Lett., 2002 Lack the ability to engineer Device parametersLack the ability to engineer Device parametersxlab.me.berkeley.eduxlab.me.berkeley.edu7Xlab Confidential – Internal Only CNT Molecular MemoryIdea similar to floating gate Flash memory Control GateS D DS Control gate, Vp ~ 8Vtox~ 9 nmFloating gate= ‘hot’ electronsVp = 1 – 4 VVsd~ 5 – 8 VVsd= 0 VControl GateGate OxideLow static & dynamic Power Low static & dynamic Powerxlab.me.berkeley.eduxlab.me.berkeley.edu8Xlab Confidential – Internal Only Reversible switching & Multi-bit Programmingxlab.me.berkeley.eduxlab.me.berkeley.edu9Xlab Confidential – Internal Only @ 4.2 K0 8 160.00.51.0 I/I (t=0)t (hr)Single electron dischargingAPL 82, 1787 (2003)APL 82, 1787 (2003)xlab.me.berkeley.eduxlab.me.berkeley.edu10Xlab Confidential – Internal Only Results SensitivityChannel conductance vs. the gate voltage0e1e2eVVth th 0.28V per electron 0.28V per electronQdot=0,1e,2eVsd=0, VG=0.2VSiO2p++ SiPdPdCNTcharge dot (Rdot)dCNT~1.0nm, Lch=200nm, tbot=110nm, Rdot=0.3nm, Collaboration withCollaboration with• Y. Zhang – IntelY. Zhang – Intel• Jing Guo - Florida U.Jing Guo - Florida U.xlab.me.berkeley.eduxlab.me.berkeley.edu11Xlab Confidential – Internal Only Conclusion•Multi-bit programmable•Single electron sensitivity at low T•Low power consumption•Integration (?)~~~ Thank you for you attention ~~~~~~ Thank you for you attention
View Full Document
Unlocking...