Nanocrystal Non-volatile Memory DevicesNV Memory DeviceQuantum Scale!FabricationPbSe or Co NanocrystalsNanocrystal Non-volatile Memory DevicesKedar PatelLiu et al (April 2006)Blauwe (Trans. on Nanotechnology, March 2002)Lin et al (TED, April 2006)NV Memory DeviceProgrammingChannel Hot Electron injection or Fowler-Nordheim tunneling into poly or nc-SiEraseFowler Nordheim tunneling to substrate or sourceQuantum Scale!For 50nm x 50nm memory cell (transistor) and 1012 cm-2 nanocrystal density: 25 nc per cellFor 32nm x 32nm memory cell (transistor) and 1012 cm-2 nanocrystal density: 10 nc per cellFabrication•Excess Si-Precipitation–Few 1-10keV, 1016 cm-2 Si implanted in SiO2 + 1000C N2 anneal 3-10nm nc-Si precipitates, ~1012 cm-2 •Aerosol Deposition–Pyrolysis of Silane (SiH4) at 950C•Direct Deposition–LPCVD of Poly-Si; stop shortly after nucleation of sites before a continuous film is formedPbSe or Co NanocrystalsTang et al (TED, March
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