EE 235/NSE 203Nanoscale FabricationProf. Connie Chang-Hasnain263M Cory HallEECS Department2008/1/28 Prof. Chang-Hasnain EE 235/ NSE 203 Fall 2005 2Course Description• Co-listed between EE and NSE• 4 unit • This course discusses various top-down and bottom-up approaches to synthesize and process nanostructured materials. • The topics include:– Self assembly: nanowire and nanotube synthesis, quantum dot synthesis (strain patterned and colloidal), – Lithography: electron beam lithography, nanoimprint– Post-synthesis modification and etching techniques. • We will discuss new electronic, optical, thermal, mechanical and chemical properties brought forth by the very small sizes.2008/1/28 Prof. Chang-Hasnain EE 235/ NSE 203 Fall 2005 3Class Format• Participation is important• Guest lecturers• Grading policy– Active participation and attendance (10%)–HW (20%)– Two individual presentations (30%)– Term paper presentation (20%) – team of 3– Term paper (20%) – team of 32008/1/28 Prof. Chang-Hasnain EE 235/ NSE 203 Fall 2005 4Teaching Staff• Prof. Chang-Hasnain – Office: 263 M Cory– Tel: 510 642-4315–Email: [email protected]– Office Hours: Wednesday 11-12• TA: Linus Chuang– Office: 253M Cory Hall– Tel: 510 642-1023• Discussion session: TBD–1stsession start from week 32008/1/28 Prof. Chang-Hasnain EE 235/ NSE 203 Fall 2005 5Putting it in Scale2008/1/28 Prof. Chang-Hasnain EE 235/ NSE 203 Fall 2005 6Moore’s Law and Technology Trend34.3617.188.594.294.292.151.07DRAM Chip Capacity (Gbits)76746830818913010161Interconnect Delay (ps)11162232456590Technology Node (nm)‘16‘14‘12‘10‘08‘06‘04High Volumn ManufacturingSource: ITRS 20042008/1/28 Prof. Chang-Hasnain EE 235/ NSE 203 Fall 2005 7Why is Nano Hot?2008/1/28 Prof. Chang-Hasnain EE 235/ NSE 203 Fall 2005 8How to make nanostructures !Bottom-up Top-downAtom by atomMolecule by moleculeStart with a full 3-D and ”carve” itNano-craft2008/1/28 Prof. Chang-Hasnain EE 235/ NSE 203 Fall 2005 9Materials Synthesis TemplatesReinforcement for composite materialsModel systems for novel physicsNanoprobesDevicesNano-XBio- and Medical devicesfillingcoatingconvertingDetectors, ModulatorsNEMSSensorsTransistorsDiode lasers FunctionalizedAnd high aspect ratio SPM probesNano-X ApplicationsField Emission DisplaySolar Cells 2008/1/28 Prof. Chang-Hasnain EE 235/ NSE 203 Fall 2005 10Axioms of Nano- DevicesCCH Opinions• Electrical input or output(s) are necessary.– Synthesis is not the only step; processing is also necessary.– Self assembly per se may not be sufficient– Need to form desirable electrical contacts• Leveraging either of the two advantages– Quantization effect– Large surface-to-volume ratio• Uniformity is important – requirement may vary from 1 ppm to 10%.• Controllability is important– Size, site, doping, contact, X property (electrical, optical, mechanical, etc.)• Must be able to compete with incumbent technologies.2008/1/28 Prof. Chang-Hasnain EE 235/ NSE 203 Fall 2005 111948 - 1958First point-contact transistor invented at Bell Labs. (Source: Bell Labs.) The first monolithic integrated circuit, about the size of a finger tip, was documented and developed at Texas Instruments by Jack Kilby in 1958. The IC was a chip of a single Ge crystal containing one transistor, one capacitor, and one resistor. (Source: Texas Instruments) 2008/1/28 Prof. Chang-Hasnain EE 235/ NSE 203 Fall 2005 121990sA contemporary transistor, shown in profile through a transmission electron microscope, measures about two micron across and has elements as small as 0.4 micron. (From article entitled "Toward Point One" in Scientific American, February 1995, Page 90.) SEM view of three levels of copper interconnect metallization in IBM's new faster CMOS integrated circuits (Photograph courtesy of IBM Corporation, 1997.)2008/1/28 Prof. Chang-Hasnain EE 235/ NSE 203 Fall 2005 13Multilayer Interconnects2008/1/28 Prof. Chang-Hasnain EE 235/ NSE 203 Fall 2005 14InterconnectsHighly magnified scanning electron microscope (SEM) view of IBM's six-level copper interconnect technology in an integrated circuit chip. The aluminum in transistor interconnections in a silicon chip has been replaced by copper that has a higher conductivity (by nearly 40%) and also a better ability to carry higher current densities without electromigration. Lower copper interconnect resistance means higher speeds and lower RC constants. (Photograph courtesy of IBM Corporation, 1997.)2008/1/28 Prof. Chang-Hasnain EE 235/ NSE 203 Fall 2005 15But… question what you read!Bell Labs scientists Hendrik Schon and Zhenan Bao are part of a team that made molecular-scale organic transistors, setting the stage for a new era of easily assembled and potentially inexpensive molecular electronics that may provide an alternative to silicon-based electronics. Scientific fraud found at Bell LabsStar researcher fired for falsifying dataBy LINDA A. JOHNSONTHE ASSOCIATED PRESSTRENTON, N.J. -- A series of extraordinary advances claimed by scientists at Bell Labs are based on fraudulent data, a committee investigating the matter reported yesterday. The findings, in effect, dismiss as fiction results from more than a dozen papers that had been promoted as major breakthroughs in physics, including claims last fall that Bell Labs had created molecular-scale transistors.Jan Hendrik Schon, a star researcher in electronics, was fired after the outside committee found he falsified experimental data.The review committee concluded Schon, 32, made up or altered data at least 16 times between 1998 and 2001 -- the first case of scientific fraud in the 77-year history of the Nobel Prize-winning laboratory, Lucent Technologies said yesterday. Bell Labs is the research arm of Lucent, which makes telecommunications gear; the labs used to be part of AT&T.2008/1/28 Prof. Chang-Hasnain EE 235/ NSE 203 Fall 2005 16Principle of Monolithic Process Integration2008/1/28 Prof. Chang-Hasnain EE 235/ NSE 203 Fall 2005 17Process
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