Resources for HW#1 (Part 2)Feb 11, 2008EE C235 / NSE C203 2Spring 2007Photoresist FactsEE C235 / NSE C203 3Spring 2007Wet and Dry Etching FactsEE C235 / NSE C203 4Spring 2007Wet Thermal Oxidation in VCSEL FabricationP-type DBR (mirror)N-type DBR (mirror)Resonant CavityAlGaAs layer w/ very high Al composition (>97%) for oxidationOther AlGaAs layers in the DBR region (Al composition ~ 80%)EE C235 / NSE C203 5Spring 2007Wet Thermal Oxidation in VCSEL FabricationEE C235 / NSE C203 6Spring 2007Wet Thermal Oxidation in VCSEL FabricationEE C235 / NSE C203 7Spring 2007Absorption in Bulk SemiconductorsEmptyConduction bandFullValence bandEE C235 / NSE C203 8Spring 2007Gain in Bulk Semiconductors – Under PumpingSome electrons inConduction bandSome holes inValence bandEE C235 / NSE C203 9Spring 2007Gain-Guided Edge-Emitting Semiconductor LaserEE C235 / NSE C203 10Spring 2007Index-Guided Edge-Emitting Semiconductor
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