Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science 6.002 – Electronic Circuits Spring 2007 Homework #6 Handout - S07-030 Issued 3/15/2007 – Due 3/23/2007 Reading: Section 7.7, and Sections 8.1-8.2 of A+L. Review Section 4.5 Exercise 6.1. Do Exercise 8.1 from A+L Chapter 8 (page 447). Exercise 6.2. Consider a two-terminal device formed by a MOSFET with its gate tied to its drain. The MOSFET is characterized by parameters VT and K, and its drain-to-source voltage and drain current are den oted as vR and iR, respectively. a. Write the vR - iR relation for this device operating under the saturation discipline (i.e. for vR ≥ VT ). b. Develop a small-signal model for this device about a dc operating point vR = VR, describing the relationship between vr and ir. Problem 6.1. Do Problem 7.5 from A+L Chapter 7 (pages 396-397) with the following changes: 2 1 • For part a., show that vOU T is related to vIN according to vOU T − 2(vIN − VT + RK )vOU T + (vIN − VT )2 = 0 instead of the equation listed in th e book. • For part b., only find the range fo r vIN . Do not find the corresponding range for vOU T . You should be able to do this without having to solve any quadratic equations. Problem 6.2. Do Problem 7.10 from A+L Chapter 7 (page 399). (Problem 6.3 on back) Cite as: Anant Agarwal and Jeffrey Lang, course materials for 6.002 Circuits and Electronics, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].RL VS -vOUT VS + vIN Figure 1: Amplifier Dual power supplies layout. Problem 6.3. In many amplifiers we use dual powe r supplies so we can obtain a 0 V offset at the output. An example is shown in Fig. 1. For this problem, us e VS + = +1.5 V, VS − = −1.5 V, and MOSFET parameters K =1 mA/V2 and VT = 0.5 V. Then : a. Find the value of RL such that vOU T = 0 V wh en vIN = 0 V. b. As vIN is increased, the output voltage vOU T decreases. For the value of RL found in part a., find the minimum output voltage vOU T such that the MOSFET will obey the saturation discipline. Cite as: Anant Agarwal and Jeffrey Lang, course materials for 6.002 Circuits and Electronics, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month
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