� Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science 6.002 – Circuits & Electronics Spring 2007 Homework #7 Handout S07-036 Issued 03/22/2007 – Due 04/06/2007 Helpful readings for this homework: Chapter 8 Exercise 7.1: Exercise 8.2 from Chapter 8 of A&L (page 448). Exercise 7.2: Exercise 8.6 from Chapter 8 of A&L (page 449). Problem 7.1: VS VS R R vI vMID vO Figure 1: A two-stage non-inverting MOSFET amplifier is shown above. In this problem, VI is chosen such that VI = VMID = VO (a). Show that the input bias VI for which VI = VMID = VO is given by: −1 + 1 + 2KR(VS − VT )VI = VT + KR (b). Draw the small-signal circuit for the amplifier and use it to determine the small-signal gain G = vo/vi. Express G as a function of K, VT , VI and R. Problem 7.2: Parts (a), (b) and (c) of Problem 8.2 from Chapter 8 of A&L (page 450). In part (c), determine the small-signal gain in terms of gm = K(VIN − VOUT − VT ). 1 Cite as: Anant Agarwal and Jeffrey Lang, course materials for 6.002 Circuits and Electronics, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].Problem 7.3: This problem examines the behavior and application of a new field effect transistor (NewFET) with large-signal electrical characteristics as described in Figure 2. Here, it is assumed that vDS ≥ 0. Note that the coefficient K and the threshold voltage VT are both positive and constant. iD vGS vDS Figure 2: Large-signal characteristics of the NewFet. (a). An amplifier is constructed with the NewFET as shown in Figure 3. Note that this amplifier does not have a load at its output. Derive an expression for vOUT as a function of vIN , in terms of the power supply voltage VS , the resistance R, and th e NewFET parameters K and VT . Do so for 0 ≤ vIN ≤ VS assuming that 0 < VT < VS . Figure 3: The NewFet used as an amp lifier. (b). For the amplifier shown in Figure 3 and analyzed in part (a), sketch and clearly label a graph of vOUT versu s vIN for 0 ≤ vIN ≤ VS . (c). When the NewFET is biased into its active region, its small-signal model is as shown in Figure 4. Using the model shown in Figure 4, fi nd id in terms of gm, ro, vgs, and vds. (d). Assuming that the NewFET is biased into its active region, derive expressions for the small-signal-model parameters gm and ro in terms of the large-signal-model parameters K and VT , and the bias voltages VGS and VDS . 2 Cite as: Anant Agarwal and Jeffrey Lang, course materials for 6.002 Circuits and Electronics, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].Figure 4: Small-signal model of the NewFET when biased in its active region. 3 Cite as: Anant Agarwal and Jeffrey Lang, course materials for 6.002 Circuits and Electronics, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month
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