Section 3.3 Input/Output StatementsMedici User’s Manual 3-176 Confidential and Proprietary MD 1999.2Draft 7/29/99PLOT.1DThe PLOT.1D statement plots a specific quantity along a line segment throughthe device, or plots terminal characteristics from data accumulated in a log file orread in from a previous log file.PLOT.1D Distance Plot Quantities { ( { POTENTIA | QFN | QFP | VALENC.B | CONDUC.B | VACUUM | E.FIELD | ARRAY1 | ARRAY2 | ARRAY3 | TRAPS | TRAP.OCC | DOPING | ELECTRON | HOLES | NIE | NET.CHAR | NET.CARR | J.CONDUC | J.ELECTR | J.HOLE | J.DISPLA | J.TOTAL | RECOMBIN | N.RECOMB | P.RECOMB | II.GENER | BB.GENER | ( PHOTOGEN [WAVE.NUM=<n>] ) | N.MOBILI | P.MOBILI | SIGMA | ELE.TEMP | HOL.TEMP | ELE.VEL | HOL.VEL | J.EFIELD | G.GAMN | G.GAMP | G.GAMT | G.IN | G.IP | G.IT | IMPURITY=<c> | OTHER=<c> Lattice Temperature AAM Parameters | LAT.TEMP Heterojunction Device AAM Parameters | X.MOLE } AC Small-Signal Analysis Quantity Parameters [ {AC.REAL | AC.IMAG | AC.MAGN | AC.PHAS} ] Distance Plot Parameters [X.COMPON] [Y.COMPON] X.START=<n> Y.START=<n> X.END=<n> Y.END=<n> [HORZ.STA=<n>] [ {FIND.MIN | FIND.MAX} [SEMICOND] [INSULATO] [FIND.DIS=<n>] ] ) Terminal Characteristics Plot Parameters | ( X.AXIS=<c> Y.AXIS=<c> [ORDER] [IN.FILE=<c>] [X.MIN=<n>] [X.MAX=<n>] [CONDITIO=<c>] ) }( PLOT.1D, continued next page)Medici User’s ManualPLOT.1DMD 1999.2 Confidential and Proprietary 3-177Draft 7/29/99(PLOT.1D, continued from previous page) Plot Controls [ SPLINE [NSPLINE=<n>] ] [LEFT=<n>] [RIGHT=<n>] [BOTTOM=<n>] [TOP=<n>] [UNCHANGE] [ {Y.LOGARI | S.LOGARI | INTEGRAL} ] [ABSOLUTE] [NEGATIVE] [CLEAR] [AXES] [LABELS] [MARKS] [TITLE=<c>] [T.SIZE=<n>] [X.OFFSET=<n>] [X.LENGTH=<n>] [X.SIZE=<n>] [X.LOGARI] [Y.OFFSET=<n>] [Y.LENGTH=<n>] [Y.SIZE=<n>] [CURVE] [ {SYMBOL=<n> | POINTS} ] [C.SIZE=<n>] [LINE.TYP=<n>] [COLOR=<n>] [DEVICE=<c>] [PAUSE] [PLOT.OUT=<c>] [PLOT.BIN=<c>] [PRINT] [OUT.FILE=<c>] [TIMESTAM [TIME.SIZ=<n>] ] Circuit Analysis AAM Parameters [STRUCTUR=<c>]Parameter Type Definition Default UnitsDistance Plot QuantitiesPOTENTIA logical Specifies that midgap potential in volts is plotted versus distance alongthe specified line through the device.falseQFN logical Specifies that the electron quasi-Fermi potential in volts is plotted versusdistance along the specified line through the device.falseQFP logical Specifies that the hole quasi-Fermi potential in volts is plotted versusdistance along the specified line through the device.falseVALENC.B logical Specifies that the valence band potential in volts is plotted versus dis-tance along the specified line through the device.falseCONDUC.B logical Specifies that the conduction band potential in volts is plotted versus dis-tance along the specified line through the device.falseVACUUM logical Specifies that the vacuum potential in volts is plotted versus distancealong the specified line through the device.falseE.FIELD logical Specifies that the magnitude of electric field in volts per centimeter isplotted versus distance along the specified line through the device.falseARRAY1 logical Specifies that the user generated array number 1 is to be plotted alongthe specified line. Refer to the EXTRACT statement for more informa-tion.falseARRAY2 logical Specifies that the user generated array number 2 is to be plotted alongthe specified line. Refer to the EXTRACT statement for more informa-tion.falseARRAY3 logical Specifies that the user generated array number 3 is to be plotted alongthe specified line. Refer to the EXTRACT statement for more informa-tion.falseTRAPS logical Specifies that the trap density in number per cubic centimeter is to beplotted along the specified line.falseTRAP.OCC logical Specifies that the filled trap density in number per cubic centimeter is tobe plotted along the specified line.falseSection 3.3 Input/Output StatementsMedici User’s Manual 3-178 Confidential and Proprietary MD 1999.2Draft 7/29/99DOPING logical Specifies that the net impurity concentration in number per cubic centi-meter is plotted versus distance along the specified line through thedevice. The net impurity concentration is the donor impurity concentra-tion minus the acceptor impurity concentration.falseELECTRON logical Specifies that electron concentration in number per cubic centimeter isplotted versus distance along the specified line through the device.falseHOLES logical Specifies that hole concentration in number per cubic centimeter is plot-ted versus distance along the specified line through the device.falseNIE logical Specifies that effective intrinsic carrier concentration in number percubic centimeter is plotted versus distance along the specified linethrough the device.falseNET.CHAR logical Specifies that the net charge concentration in number per cubic centime-ter is plotted versus distance along the specified line through the device.The net charge concentration is the sum of the donor impurity concen-tration and hole concentration minus the sum of the acceptor impurityconcentration and electron concentration plus the concentration of anytrapped charge.falseNET.CARR logical Specifies that the net carrier concentration in number per cubic centime-ter is plotted versus distance along the specified line through the device.The net carrier concentration is the hole concentration minus the elec-tron concentration.falseJ.CONDUC logical Specifies that conduction current in amps per square centimeter is plot-ted versus distance along the specified line through the device.falseJ.ELECTR logical Specifies that electron current in amps per square centimeter is plottedversus distance along the specified line through the device.falseJ.HOLE logical Specifies that hole current in amps per square centimeter is plotted ver-sus distance along the specified line through the device.falseJ.DISPLA logical Specifies that displacement current in amps per square centimeter isplotted versus distance along the specified line through the device.falseJ.TOTAL logical Specifies that total current in amps per square centimeter is plotted ver-sus distance along the specified line through the device.falseRECOMBIN logical Specifies that net recombination in number per cubic centimeter per sec-ond is plotted versus distance along the specified line through the device.For unequal electron and hole recombination, RECOMBIN is
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