EE 130 Quiz on MS Junctions Week 7 NotesProblem 1 (Pierret 14.3)An ideal rectifying contact is formed by depositing gold (ΦM = 5.10 eV) on an ND = 1015 cm-3 doped silicon substrate maintained at room temperature. Calculatea) ΦBb) Vbic) W under equilibrium conditionsd) |ε|max in the semiconductor under equilibrium conditionsProblem 2 (from Daniel)How do you find the doping of the semiconductor using CV?a) If Schottky theory applies, which metal will probably have the higher work function?b) Which line correspond to the more lightly doped semiconductor?N-type material. Metal – silicon voltage means positive terminal of voltage source is on metal side.x-intercept is a measure of V_bi. Metal 2 has the highest V_bi. Thus, it will have the most band-bending and highest metal work function.Lower doping = higher slope. Metal 1's semiconductor is lighter doped.Problem 3 (from Prof. Tsu-Jae King)The steady-state hole concentration profiles in two n-type Si samples maintained at 300K are shown below. Note that the excess holes are injected at x = 0.Is ____ larger in Sample A or Sample B?a) Doping concentration NDb) Hole diffusion current density at x = 0c) Hole lifetime,
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