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Berkeley ELENG 130 - Lecture 37

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Lecture #37Effective Mobilitymeff vs. Effective Normal FieldEE130 Lecture 37, Slide 1Spring 2007Lecture #37OUTLINE The MOSFET: •Effective mobilityReading: Chapter 17.2EE130 Lecture 37, Slide 2Spring 2007Effective MobilityFor small values of VDS (i.e. for VDS << VGVT), the NMOSFET can be modeled as a resistor:where eff is the effective carrier mobilityLVWQWQvWQIDSeffinveffinvinvDSDSDSDSIVR )(TGox eeffDSDSDSVVCWLIVREE130 Lecture 37, Slide 3Spring 2007Scattering mechanisms:• Coulombic scattering• phonon scattering• surface roughness scattering (Vgs + Vt + 0.2)/6Toxe(MV/cm)–(Vgs + 1.5Vt – 0.25)/6Tox e(MV/cm) (NFET) (PFET)eff vs. Effective Normal


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Berkeley ELENG 130 - Lecture 37

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