EE 130 PN Junction IV Characteristics Week 5 NotesMini-lecture, then quiz (courtesy of Pierret, Prof. Ali Javey, and Prof. Tsu-Jae King), and quiz solutionsProblem 1a) Which side is more heavily doped? Explain.b) What is the net dopant concentration on the lighter doped side?c) Is the junction forward or reverse biased? Justify.d) Sketch the equilibrium E-field distribution on the left graph.e) Complete the energy-band diagram on the right graph. Problem 2Indicate how and why the following characteristics of a one-sided Si pn junction maintained at T=300K would change if the dopant concentration on the more lightly doped side were to be increased slightly. Forward-bias current (I for a given VA)Reverse-bias current (I for a given VA)Reverse breakdown voltage (VBR)Problem 3Identify the source of non-idealities (A, B, C, D, and E) in the I-V characteristic of a room temperature Si diode. Notice the forward bias region is on a semi-log plot and the reverse bias region is on a linear scale.ABCIdealDElog IVA-VA-I1. Thermal recombination in the depletion region2. Avalanching and/or Zener process3. Thermal generation in the depletion region4. Series resistance5. High level
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