 Semiconductor Components Industries, LLC, 2004September, 2004 − Rev. 51 Publication Order Number:2N6071/D2N6071A/B SeriesPreferred Device Sensitive Gate TriacsSilicon Bidirectional ThyristorsDesigned primarily for full-wave AC control applications, such aslight dimmers, motor controls, heating controls and power supplies; orwherever full-wave silicon gate controlled solid-state devices areneeded. Triac type thyristors switch from a blocking to a conductingstate for either polarity of applied anode voltage with positive ornegative gate triggering.Features• Pb−Free Package is Available*• Sensitive Gate Triggering Uniquely Compatible for Direct Couplingto TTL, HTL, CMOS and Operational Amplifier Integrated CircuitLogic Functions• Gate Triggering: 4 Mode − 2N6071A, B; 2N6073A, B; 2N6075A, B• Blocking Voltages to 600 V• All Diffused and Glass Passivated Junctions for Greater ParameterUniformity and Stability• Small, Rugged, Thermopad Construction for Low ThermalResistance, High Heat Dissipation and Durability• Device Marking: Device Type, e.g., 2N6071A, Date Code*For additional information on our Pb−Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.TRIACS4.0 A RMS, 200 − 600 VPreferred devices are recommended choices for future useand best overall value.TO−225CASE 077STYLE 5123MT1GMT2See detailed ordering and shipping information in the packagedimensions section on page 2 of this data sheet.ORDERING INFORMATIONx = 1, 3, 5y = A, BY = YearWW = Work WeekMARKING DIAGRAMYWW2N60xyREAR VIEWSHOW TAB1. MT12. MT23. Gatehttp://onsemi.com2N6071A/B Serieshttp://onsemi.com2MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)RatingSymbol Value Unit*Peak Repetitive Off-State Voltage (Note 1)(TJ = 40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open)2N6071A,B2N6073A,B2N6075A,BVDRM,VRRM200400600V*On-State RMS Current (TC = 85°C) Full Cycle Sine Wave 50 to 60 Hz IT(RMS)4.0 A*Peak Non−repetitive Surge Current (One Full cycle, 60 Hz, TJ = +110°C) ITSM30 ACircuit Fusing Considerations (t = 8.3 ms) I2t 3.7 A2s*Peak Gate Power (Pulse Width ≤ 1.0 s, TC = 85°C) PGM10 W*Average Gate Power (t = 8.3 ms, TC = 85°C) PG(AV)0.5 W*Peak Gate Voltage (Pulse Width ≤ 1.0 s, TC = 85°C) VGM5.0 V*Operating Junction Temperature Range TJ−40 to +110 °C*Storage Temperature Range Tstg−40 to +150 °CMounting Torque (6-32 Screw) (Note 2) − 8.0 in. lb.Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limitvalues (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,damage may occur and reliability may be affected.1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source suchthat the voltage ratings of the devices are exceeded.2. Torque rating applies with use of a compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermalresistance. Main terminal 2 and heatsink contact pad are common.THERMAL CHARACTERISTICSCharacteristic Symbol Max Unit*Thermal Resistance, Junction−to−Case R JC3.5 °C/WThermal Resistance, Junction−to−Ambient R JA75 °C/WMaximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL260 °C*Indicates JEDEC Registered Data.ORDERING INFORMATIONDevice Package Shipping†2N6071A TO−225 500 Units / Box2N6071B TO−225 500 Units / Box2N6071BG TO−225(Pb−Free)500 Units / Box2N6071BT TO−225 50 Units / Rail2N6073A TO−225 500 Units / Box2N6073B TO−225 500 Units / Box2N6075A TO−225 500 Units / Box2N6075B TO−225 500 Units / Box†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.2N6071A/B Serieshttp://onsemi.com3ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)CharacteristicSymbol Min Typ Max UnitOFF CHARACTERISTICS*Peak Repetitive Blocking Current(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°CTJ = 110°CIDRM,IRRM−−−−102AmAON CHARACTERISTICS*Peak On-State Voltage (Note 3) (ITM = 6.0 A Peak) VTM− − 2 V*Gate Trigger Voltage (Continuous DC), All Quadrants(Main Terminal Voltage = 12 Vdc, RL = 100 , TJ = −40°C)VGT− 1.4 2.5VGate Non−Trigger Voltage, All Quadrants(Main Terminal Voltage = 12 Vdc, RL = 100 , TJ = 110°C)VGD0.2 − −V*Holding Current(Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 1 Adc)TJ = −40°CTJ = 25°CIH−−−−3015mATurn-On Time (ITM = 14 Adc, IGT = 100 mAdc) tgt− 1.5 − sQUADRANT(Maximum Value)Type IGT @ TJImAIImAIIImAIVmAGate Trigger Current (Continuous DC)(Main Terminal Voltage = 12 Vdc RL= 100 )2N6071A2N6073A+25°C 5 5 5 10(Main Terminal Voltage = 12 Vdc, RL = 100 ) 2N6073A2N6075A−40°C 20 20 20 302N6071B2N6073B+25°C 3 3 3 52N6073B2N6075B−40°C 15 15 15 20DYNAMIC CHARACTERISTICSCritical Rate of Rise of Commutation Voltage@ VDRM, TJ = 85°C, Gate Open, ITM = 5.7 A, Exponential Waveform,Commutating di/dt = 2.0 A/msdv/dt(c) − 5 − V/s3. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.*Indicates JEDEC Registered Data.Trigger devices are recommended for gating on Triacs. They provide:1. Consistent predictable turn-on points.2. Simplified circuitry.3. Fast turn-on time for cooler, more efficient and reliable operation.SAMPLE APPLICATION:TTL-SENSITIVE GATE 4 AMPERE TRIACTRIGGERS IN MODES II AND III0 V−VEEVEE = 5.0 VMC7400147+5102N6071ALOAD4115 VAC60 Hz2N6071A/B Serieshttp://onsemi.com4+ Current+ VoltageVTMIHSymbol ParameterVDRMPeak Repetitive Forward Off State VoltageIDRMPeak Forward Blocking CurrentVRRMPeak Repetitive Reverse Off State VoltageIRRMPeak Reverse Blocking CurrentVoltage Current Characteristic of Triacs(Bidirectional Device)IDRM at VDRMon stateoff stateIRRM at VRRMQuadrant 1MainTerminal 2 +Quadrant 3MainTerminal 2 −VTMIHVTMMaximum On State VoltageIHHolding CurrentMT1(+) IGTGATE(+) MT2REFMT1(−) IGTGATE(+) MT2REFMT1(+) IGTGATE(−) MT2REFMT1(−) IGTGATE(−) MT2REF−MT2 NEGATIVE(Negative Half Cycle)MT2 POSITIVE(Positive Half Cycle)+Quadrant III Quadrant IVQuadrant II Quadrant IQuadrant Definitions for a TriacIGT − + IGTAll polarities are referenced to MT1.With in−phase