PIN Photodiodes1Publication date: April 2004 SHE00037BEDPNZ323B (PN323B)Silicon planar typeFor optical control systems■ Features• Fast response which is well suited to high speed modulated lightdetection: tr , tf = 50 ns (typ.)• High sensitivity, high reliability• Peak emission wavelength matched with infrared light emittingdiodes: λp = 970 nm (typ.)• Wide detection area, wide half-power angle: θ = 70° (typ.)• Adoption of visible light cutoff resin■ Absolute Maximum Ratings Ta = 25°CParameter Symbol Rating UnitReverse voltage VR30 VPower dissipation PD100 mWOperating ambient temperature Topr−30 to +85 °CStorage temperature Tstg−40 to +100 °CParameter Symbol Conditions Min Typ Max UnitDark current IDVR = 10 V 5 50 nAPhotocurrent *1ILVR = 10 V, L = 1 000 lx 31 µASensitivity to infrared radiation *2SIRVR = 5 V, H = 0.1 mW/cm23.2 4.0 µAPeak emission wavelength λpVR = 10 V 970 nmRise time *3trVR = 10 V, RL = 1 kΩ 50 nsFall time *3tf50 nsRise time *3trVR = 10 V, RL = 100 kΩ 5 µsFall time *3tf5 µsTerminal capacitance CtVR = 0 V, f = 1 MHz 70 pFHalf-power angle θ The angle from which photocurrent 70 °becomes 50%■ Electrical-Optical Characteristics Ta = 25°C ± 3°CNote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.3. This device is designed be disregarded radiation.4.*1: Source: Tungsten (color temperature 2 856 K)*2: Source: Infrared radiation (λ = 940 nm)*3: Switching time measurement circuitUnit: mm1: Anode2: CathodeLSRLR102NC-001 Package(2.3)Chip4.6±0.2Not soldered 1.5 max.(0.5) (1.0)(2)7.5±0.25.5±0.26.0±0.231.25±1.01.5±0.222.25±1.0(1.5)0.5(1.32)(2.54)123.8±0.2(2.3)0.6±0.1(2-0.6±0.1)50 ΩλP = 900 nmtr: Rise timetf:Fall time Sig. inRLVRSig. out(Input pulse)(Output pulse)10%90%trtfNote) The part number in the parenthesis shows conventional part number.PNZ323B2SHE00037BED∆IL TaSpectral sensitivity characteristics Directivity characteristicsPD TaIL LID TaCt VRtr , tf RLID VRTerminal capacitance Ct (pF)Reverse voltage VR (V)Dark current ID (nA)Reverse voltage VR (V)Rise time tr , Fall time tf (µs)Load resistance RL (kΩ)Power dissipation PD (mW)Ambient temperature Ta (°C)Relative photocurrent ∆IL (%)Ambient temperature Ta (°C)Dark current ID (nA)Ambient temperature Ta (°C)Photocurrent IL (µA)Illuminance L (lx)Relative sensitivity ∆S (%)Wavelength λ (nm)Relative sensitivity ∆S (%)Half-power angle θ (°)1201008060402000 20406080100−301601208040800400−40VR = 10 VL = 1 000 lxT = 2 856 KVR = 10 VTa = 25°C100806040200600 700 800 900 1 2001 1001 000VR = 10 VTa = 25°CT = 2 856 KTa = 25°C10310210110210410310−1101031021104008010−110210110−1−40VR = 10 V1008060402080 40 0 40 80010080604020010−210−111010210210110−1110 0 4840322416810210−210−1Request for your special attention and precautions in using the technical informationand semiconductors described in this material(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any ofthe products or technical information described in this material and controlled under the "Foreign Exchangeand Foreign Trade Law" is to be exported or taken out of Japan.(2) The technical information described in this material is limited to showing representative characteristics andapplied circuits examples of the products. It neither warrants non-infringement of intellectual property rightor any other rights owned by our company or a third party, nor grants any license.(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technicalinformation as described in this material.(4) The products described in this material are intended to be used for standard applications or general elec-tronic equipment (such as office equipment, communications equipment, measuring instruments and house-hold appliances).Consult our sales staff in advance for information on the following applications:• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-tion equipment, life support systems and safety devices) in which exceptional quality and reliability arerequired, or if the failure or malfunction of the products may directly jeopardize life or harm the humanbody.• Any applications other than the standard applications intended.(5) The products and product specifications described in this material are subject to change without notice formodification and/or improvement. At the final stage of your design, purchasing, or use of the products,therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-tions satisfy your requirements.(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will notbe liable for any defect which may arise later in your equipment.Even when the products are used within the guaranteed values, take into the consideration of incidence ofbreak down and failure mode, possible to occur to semiconductor products. Measures on the systems suchas redundant design, arresting the spread of fire or preventing glitch are recommended in order to preventphysical injury, fire, social damages, for example, by using the products.(7) When using products for which damp-proof packing is required, observe the conditions (including shelf lifeand amount of time let standing of unsealed items) agreed upon when specification sheets are individuallyexchanged.(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior writtenpermission of Matsushita Electric Industrial Co., Ltd.2003
View Full Document
Unlocking...