© Semiconductor Components Industries, LLC, 2006March, 2006 − Rev. 31 Publication Order Number:P2N2222A/DP2N2222AAmplifier TransistorsNPN SiliconFeatures• Pb−Free Packages are Available*MAXIMUM RATINGS (TA = 25°C unless otherwise noted)CharacteristicSymbol Value UnitCollector−Emitter Voltage VCEO40 VdcCollector−Base Voltage VCBO75 VdcEmitter−Base Voltage VEBO6.0 VdcCollector Current − Continuous IC600 mAdcTotal Device Dissipation @ TA = 25°CDerate above 25°CPD6255.0mWmW/°CTotal Device Dissipation @ TC = 25°CDerate above 25°CPD1.512WmW/°COperating and Storage JunctionTemperature RangeTJ, Tstg−55 to+150°CTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to AmbientRqJA200 °C/WThermal Resistance, Junction to CaseRqJC83.3 °C/WStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.*For additional information on our Pb−Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.TO−92(T0−226AA)CASE 29−11STYLE 17MARKINGDIAGRAMhttp://onsemi.com(Note: Microdot may be in either location)123P2N2222AAYWW GGP2N2 = Device Code222A = Specific DeviceA = Assembly LocationY = YearWW = Work WeekG = Pb−Free PackageP2N2222ARL1 TO−925000 Units / BulkP2N2222ARL1G TO−92(Pb−Free)5000 Units / BulkDevice Package Shipping†P2N2222A TO−922000 / Tape & AmmoP2N2222AG TO−92(Pb−Free)2000 / Tape & AmmoORDERING INFORMATIONCOLLECTOR12BASE3EMITTERP2N2222AZL1 TO−92P2N2222AZL1G TO−92(Pb−Free)2000 / Tape & Reel2000 Units / Tube†For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationBrochure, BRD8011/D.P2N2222Ahttp://onsemi.com2ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)CharacteristicSymbol Min Max UnitOFF CHARACTERISTICSCollector−Emitter Breakdown Voltage(IC = 10 mAdc, IB = 0)V(BR)CEO40 − VdcCollector−Base Breakdown Voltage(IC = 10 mAdc, IE = 0)V(BR)CBO75 − VdcEmitter−Base Breakdown Voltage(IE = 10 mAdc, IC = 0)V(BR)EBO6.0 − VdcCollector Cutoff Current(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)ICEX− 10 nAdcCollector Cutoff Current(VCB = 60 Vdc, IE = 0)(VCB = 60 Vdc, IE = 0, TA = 150°C)ICBO−−0.0110mAdcEmitter Cutoff Current(VEB = 3.0 Vdc, IC = 0)IEBO− 10 nAdcCollector Cutoff Current(VCE = 10 V)ICEO− 10 nAdcBase Cutoff Current(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)IBEX− 20 nAdcON CHARACTERISTICSDC Current Gain(IC = 0.1 mAdc, VCE = 10 Vdc)(IC = 1.0 mAdc, VCE = 10 Vdc)(IC = 10 mAdc, VCE = 10 Vdc)(IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C)(IC = 150 mAdc, VCE = 10 Vdc) (Note 1)(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 1)(IC = 500 mAdc, VCE = 10 Vdc) (Note 1)hFE355075351005040−−−−300−−−Collector−Emitter Saturation Voltage (Note 1)(IC = 150 mAdc, IB = 15 mAdc)(IC = 500 mAdc, IB = 50 mAdc)VCE(sat)−−0.31.0VdcBase−Emitter Saturation Voltage (Note 1)(IC = 150 mAdc, IB = 15 mAdc)(IC = 500 mAdc, IB = 50 mAdc)VBE(sat)0.6−1.22.0VdcSMALL−SIGNAL CHARACTERISTICSCurrent−Gain − Bandwidth Product (Note 2)(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)CfT300 − MHzOutput Capacitance(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)Cobo− 8.0 pFInput Capacitance(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)Cibo− 25 pFInput Impedance(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)hie2.00.258.01.25kWVoltage Feedback Ratio(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)hre−−8.04.0X 10− 4Small−Signal Current Gain(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)hfe5075300375−Output Admittance(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)hoe5.02535200mMhosCollector Base Time Constant(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)rb′Cc− 150 psNoise Figure(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz)NF− 4.0 dB1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.2. fT is defined as the frequency at which |hfe| extrapolates to unity.P2N2222Ahttp://onsemi.com3ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)CharacteristicSymbol Min Max UnitSWITCHING CHARACTERISTICSDelay Time(VCC = 30 Vdc, VBE(off) = −2.0 Vdc,IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)td− 10 nsRise Time tr− 25 nsStorage Time(VCC = 30 Vdc, IC = 150 mAdc,IB1 = IB2 = 15 mAdc) (Figure 2)ts− 225 nsFall Time tf− 60 nsFigure 1. Turn−On Time Figure 2. Turn−Off TimeSWITCHING TIME EQUIVALENT TEST CIRCUITSScope rise time < 4 ns*Total shunt capacitance of test jig,connectors, and oscilloscope.+16 V−2 V< 2 ns01.0 to 100 ms,DUTY CYCLE ≈ 2.0%1 kW+30 V200CS* < 10 pF+16 V−14 V0< 20 ns1.0 to 100 ms,DUTY CYCLE ≈ 2.0%1 k+30 V200CS* < 10 pF−4 V1N914100010203050701002003005007001.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700IC, COLLECTOR CURRENT (mA)hFE, DC CURRENT GAINVCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)1.00.80.60.40.200.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50IB, BASE CURRENT (mA)Figure 3. Collector Saturation RegionTJ = 125°CTJ = 25°C25°C−55°CIC = 1.0 mA10 mA 150 mA500 mAVCE = 1.0 VVCE = 10 VFigure 4. DC Current GainP2N2222Ahttp://onsemi.com4Figure 5. Turn−On TimeIC, COLLECTOR CURRENT (mA)7010020050t, TIME (ns)10 20705.01005.0 7.0 30 5020010307.020IC/IB = 10TJ = 25°Ctr @ VCC = 30 Vtd @ VEB(off) = 2.0 Vtd @ VEB(off) = 03.02.0300 500500t, TIME (ns)5.07.01020305070100200300Figure 6. Turn−Off TimeIC, COLLECTOR CURRENT (mA)10 20 70 1005.0 7.0 30 50 200 300 500VCC = 30 VIC/IB = 10IB1 = IB2TJ = 25°Ct′s = ts − 1/8 tftfFigure 7. Frequency Effectsf, FREQUENCY (kHz)4.06.08.0102.00.1Figure 8. Source Resistance EffectsRS, SOURCE RESISTANCE (OHMS)NF, NOISE FIGURE (dB)1.0 2.0 5.0 10 20500.2 0.50100NF, NOISE FIGURE (dB)0.01 0.02 0.05RS = OPTIMUMRS = SOURCERS = RESISTANCEIC = 1.0 mA, RS = 150 W500 mA, RS = 200 W100 mA, RS = 2.0 kW50 mA, RS = 4.0 kWf = 1.0 kHzIC = 50 mA100 mA500 mA1.0 mA4.06.08.0102.0050 100 200 5001.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 kFigure 9. CapacitancesREVERSE VOLTAGE (VOLTS)3.05.07.0102.00.1CAPACITANCE (pF)1.0 2.0 3.0 5.0 7.0 10 2030 500.2 0.3 0.5 0.7Ccb2030CebFigure 10. Current−Gain Bandwidth ProductIC,