February 2007FAN73832 Half-Bridge Gate-Drive IC © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.comFAN73832 Rev. 1.0.2 FAN73832Half-Bridge Gate-Drive ICFeatures Floating Channel for Bootstrap Operation to +600V Typically 350mA/650mA Sourcing/Sinking Current Driving Capability for Both Channels Extended Allowable Negative VS Swing to -9.8V for Signal Propagation at VDD=VBS=15V High-Side Output in Phase of IN Signal Built-in UVLO Functions for Both Channels Built-in Common-Mode dv/dt Noise Canceling Circuit Internal 400ns Minimum Dead-Time at RDT=20KΩ Programmable Turn-on Delay-Time Control (Dead-Time)Applications SMPS Motor Drive Inverter Fluorescent Lamp Ballast HID Ballast Description The FAN73832 is a half-bridge, gate-drive IC with shut-down and programmable dead-time control functions fordriving MOSFETs and IGBTs, operating up to +600V. Fairchild’s high-voltage process and common-modenoise canceling technique provide stable operation ofhigh-side driver under high dv/dt noise circumstances.An advanced level-shift circuit allows high-side gatedriver operation up to VS=-9.8V (typical) for VBS=15V. The UVLO circuits for both channels prevent malfunctionwhen VDD and VBS are lower than the specified thresh-old voltage. Output drivers typically source/sink 350mA/650mA,respectively, which is suitable for all kinds of half- andfull-bridge inverters.Ordering Information Note:1. These devices passed wave soldering test by JESD22A-111.8-SOP8-DIPPart Number Package Pb-Free Operating Temperature Range Packing MethodFAN73832M(1)8-SOPYes -40°C ~ 125°CTubeFAN73832MX(1)Tape & ReelFAN73832N 8-DIP TubeFAN73832 Half-Bridge Gate-Drive IC© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.comFAN73832 Rev. 1.0.2 2 Typical Application Diagrams Figure 1. Application Circuit for Half-Bridge Switching Power Supply Figure 2. Application Circuit for Full-Bridge DC Motor DriverVDDVDCPWM ICPWMShutdownControl132VDDLOVBVSHOGNDIN4FAN738328567RDTDBOOTCBOOTDT/ SDRBOOTFAN73832 Rev.01HOVDDGNDINFAN73832 DC Motor ControllerPHAPHBLOSDDT/SDMHOGNDINFAN73832LODT/SDFAN73832 Rev.01VDCVCCVDDVBVBVSVSForwardReverseFAN73832 Half-Bridge Gate-Drive IC© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.comFAN73832 Rev. 1.0.2 3 Internal Block Diagram Figure 3. Functional Block Diagram of FAN73832UVLODRI VERPULS EGEN ERATOR314286INVDDGNDLOVBHOVSRRSQDRI VERHS(ON/ OFF)LS( ON/ OFF)DELAYUVLOSCHMITTTRIGGER INPUTDEAD - TIMENOISECANCELLER57DT/SDRDTINTCONTROLFAN73832 Rev:00FAN73832 Half-Bridge Gate-Drive IC© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.comFAN73832 Rev. 1.0.2 4 Pin Assignments Figure 4. Pin Configuration (Top View)Pin DefinitionsPin # Name Description1 IN Logic Input 2 GND Ground 3DT/SDDead-Time Control with External Resistor and Shutdown Function4VDDLow-Side Supply Voltage5 LO Low-Side Driver Output6VSHigh-Side Floating Supply Return 7 HO High-Side Driver Output8VBHigh-Side Floating SupplyLOINVDDVSHOVBGND12348765FAN73832DT/SDFAN73832 Rev:00FAN73832 Half-Bridge Gate-Drive IC© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.comFAN73832 Rev. 1.0.2 5 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. Theabsolute maximum ratings are stress ratings only. TA=25°C unless otherwise specified. Notes: 2. Mounted on 76.2 x 114.3 x 1.6mm PCB (FR-4 glass epoxy material).3. Refer to the following standards: JESD51-2: Integral circuits thermal test method environmental conditions - Natural convection JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages4. Do not exceed PD under any circumstances.Recommended Operating ConditionsThe Recommended Operating Conditions table defines the conditions for actual device operation. Recommendedoperating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does notrecommend exceeding them or designing to Absolute Maximum Ratings.Symbol Parameter Min. Max. UnitVSHigh-side offset voltage VB-25 VB+0.3 VVBHigh-side floating supply voltage -0.3 625 VVHOHigh-side floating output voltage HO VS-0.3 VB+0.3 VVDDLow-side and logic-fixed supply voltage -0.3 25 VVLOLow-side output voltage LO -0.3 VDD+0.3 VVINLogic input voltage (IN) -0.3 VDD+0.3 VVDT/SDDead-time and shutdown control voltage -0.3 5.0 VGND Logic ground VDD-25 VDD+0.3 VdVS/dt Allowable offset voltage slew rate 50 V/nsPD(2)(3)(4)Power dissipation8-SOP 0.625 W8-DIP 1.25θJAThermal resistance, junction-to-ambient8-SOP 200 °C/W 8-DIP 100TJJunction temperature 150 °CTSTGStorage temperature 150 °CSymbol Parameter Condition Min. Max. UnitVBHigh-side floating supply voltage VS+15 VS+20 VVSHigh-side floating supply offset voltage 6-VDD600 VVDDLow-side supply voltage 15 20 VVHOHigh-side (HO) output voltage VS VBVVLOLow-side (LO) output voltage GND VDDVVINLogic input voltage (IN) GND VDDVTAAmbient temperature -40 125 °CFAN73832 Half-Bridge Gate-Drive IC© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.comFAN73832 Rev. 1.0.2 6 Electrical CharacteristicsVBIAS (VDD, VBS)=15.0V, RDT=20KΩ,TA=25°C, unless otherwise specified. The VIN and IIN parameters are referencedto GND. The VO and IO parameters are referenced to VS and COM and are applicable to the respective outputs HOand LO.Note: 5. This parameter guaranteed by design. Symbol Parameter Condition Min. Typ. Max. UnitSUPPLY CURRENT SECTIONIQBSQuiescent VBS supply current VIN=0V or 5V 35 90µAIQDDQuiescent VDD supply current VIN=0V or 5V, RDT=20KΩ 300 450ISD(5)Shutdown supply current DT/SD=GND 650 900IPBSOperating VBS supply current fIN=20kHz, rms value 400 700IPDDOperating VDD supply current fIN=20kHz, rms value 650 850ILKOffset supply leakage current VB=VS=600V 10POWER SUPPLY SECTIONVDDUV+VBSUV+VDD and VBS supply under-voltage positive going threshold10.7 11.6 12.5 VVDDUV-VBSUV-VDD and VBS supply under-voltage negative going threshold10.0 10.8 11.6 VVDDUVHVBSUVHVDD supply under-voltage lockout hysteresis0.8 VDEAD-TIME CONTROL SECTIONRDTINTInternal dead-time setting resistance 20 KΩVDTNormal voltage at DT RDT=20KΩ 3.0 VGATE DRIVER OUTPUT SECTIONVOHHigh-level output
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