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CU-Boulder ECEN 4517 - Dual High-Speed Power MOSFET Drivers

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1.0 Electrical Characteristics2.0 Typical Performance CurvesFigure 2-1: Rise Time vs. Supply Voltage.Figure 2-2: Rise Time vs. Capacitive Load.Figure 2-3: Rise and Fall Times vs. Temperature.Figure 2-4: Fall Time vs. Supply Voltage.Figure 2-5: Fall Time vs. Capacitive Load.Figure 2-6: Propagation Delay Time vs. Supply Voltage.Figure 2-7: Propagation Delay Time vs. Input Amplitude.Figure 2-8: Supply Current vs. Supply Voltage.Figure 2-9: Output Resistance (ROH) vs. Supply Voltage.Figure 2-10: Propagation Delay Time vs. Temperature.Figure 2-11: Supply Current vs. Temperature.Figure 2-12: Output Resistance (ROL) vs. Supply Voltage.Figure 2-13: Supply Current vs. Capacitive Load.Figure 2-14: Supply Current vs. Capacitive Load.Figure 2-15: Supply Current vs. Capacitive Load.Figure 2-16: Supply Current vs. Frequency.Figure 2-17: Supply Current vs. Frequency.Figure 2-18: Supply Current vs. Frequency.Figure 2-19: Crossover Energy vs. Supply Voltage.3.0 Pin DescriptionsTable 3-1: Pin Function Table3.1 Inputs A and B3.2 Ground (GND)3.3 Output A and B3.4 Supply Input (VDD)3.5 Exposed Metal Pad4.0 Applications InformationFigure 4-1: Switching Time Test Circuit.5.0 Packaging Information5.1 Package Marking Information 2004 Microchip Technology Inc. DS21422C-page 1TC4426/TC4427/TC4428Features• High Peak Output Current – 1.5A• Wide Input Supply Voltage Operating Range:- 4.5V to 18V• High Capacitive Load Drive Capability – 1000 pF in 25 ns (typ.)• Short Delay Times – 40 ns (typ.)• Matched Rise and Fall Times• Low Supply Current:- With Logic ‘1’ Input – 4 mA- With Logic ‘0’ Input – 400 µA• Low Output Impedance – 7Ω• Latch-Up Protected: Will Withstand 0.5A Reverse Current• Input Will Withstand Negative Inputs Up to 5V• ESD Protected – 4 kV• Pin-compatible with the TC426/TC427/TC428• Space-saving 8-Pin MSOP and 8-Pin 6x5 DFN PackagesApplications• Switch Mode Power Supplies• Line Drivers• Pulse Transformer DriveGeneral DescriptionThe TC4426/TC4427/TC4428 are improved versionsof the earlier TC426/TC427/TC428 family of MOSFETdrivers. The TC4426/TC4427/TC4428 devices havematched rise and fall times when charging anddischarging the gate of a MOSFET. These devices are highly latch-up resistant under anyconditions within their power and voltage ratings. Theyare not subject to damage when up to 5V of noise spik-ing (of either polarity) occurs on the ground pin. Theycan accept, without damage or logic upset, up to500 mA of reverse current (of either polarity) beingforced back into their outputs. All terminals are fullyprotected against Electrostatic Discharge (ESD) up to4kV.The TC4426/TC4427/TC4428 MOSFET drivers caneasily charge/discharge 1000 pF gate capacitances inunder 30 ns. These device provide low enoughimpedances in both the on and off states to ensure theMOSFET's intended state will not be affected, even bylarge transients.Other compatible drivers are the TC4426A/TC4427A/TC4428A family of devices. The TC4426A/TC4427A/TC4428A devices have matched leading and fallingedge input-to-output delay times, in addition to thematched rise and fall times of the TC4426/TC4427/TC4428 devices.Package TypesNote 1: Exposed pad of the DFN package is electrically isolated.8-Pin DFN(1)NCIN AGNDIN B234567811234NC5678OUT AOUT BNCIN AGNDIN BVDDTC4426TC4427TC4426 TC4427NCOUT AOUT BVDDTC4426TC4427TC4428NCOUT AOUT BVDDTC4428TC4428NCOUT AOUT BVDDTC4426 TC4427NCOUT AOUT BVDDTC4428NCOUT AOUT BVDD8-Pin MSOP/PDIP/SOIC1.5A Dual High-Speed Power MOSFET DriversTC4426/TC4427/TC4428DS21422C-page 2  2004 Microchip Technology Inc.Functional Block DiagramEffective Input C = 12 pF (Each Input)TC4426/TC4427/TC4428OutputInputGNDVDD300 mV 4.7VInvertingNon-InvertingNote 1: TC4426 has two inverting drivers, while the TC4427 has two non-invertingdrivers. The TC4428 has one inverting and one non-inverting driver.2: Ground any unused driver input.1.5 mA 2004 Microchip Technology Inc. DS21422C-page 3TC4426/TC4427/TC44281.0 ELECTRICAL CHARACTERISTICSAbsolute Maximum Ratings †Supply Voltage.....................................................+22VInput Voltage, IN A or IN B.....................................(VDD + 0.3V) to (GND – 5V)Package Power Dissipation (TA ≤ 70°C)DFN.............................................................. Note 3MSOP..........................................................340 mWPDIP............................................................730 mWSOIC............................................................470 mWStorage Temperature Range..............-65°C to +150°CMaximum Junction Temperature...................... +150°C† Stresses above those listed under "Absolute MaximumRatings" may cause permanent damage to the device. Theseare stress ratings only and functional operation of the deviceat these or any other conditions above those indicated in theoperation sections of the specifications is not implied.Exposure to Absolute Maximum Rating conditions forextended periods may affect device reliability.PIN FUNCTION TABLEDC CHARACTERISTICSName FunctionNC No ConnectionIN A Input AGND GroundIN B Input BOUT B Output BVDDSupply InputOUT A Output ANC No ConnectionElectrical Specifications: Unless otherwise noted, TA = +25ºC with 4.5V ≤ VDD ≤ 18V.Parameters Sym Min Typ Max Units ConditionsInputLogic ‘1’, High Input Voltage VIH2.4 — — V Note 2Logic ‘0’, Low Input Voltage VIL——0.8VInput Current IIN-1.0 — +1.0 µA 0V ≤ VIN ≤ VDDOutputHigh Output Voltage VOHVDD – 0.025 — — V DC TestLow Output Voltage VOL— — 0.025 V DC TestOutput Resistance RO—710Ω IOUT = 10 mA, VDD = 18VPeak Output Current IPK—1.5—AVDD = 18VLatch-Up ProtectionWithstand Reverse CurrentIREV— > 0.5 — A Duty cycle ≤ 2%, t ≤ 300 µsVDD = 18VSwitching Time (Note 1)Rise Time tR—1930nsFigure 4-1Fall Time tF—1930nsFigure 4-1Delay Time tD1—2030nsFigure 4-1Delay Time tD2—4050nsFigure 4-1Power SupplyPower Supply Current IS————4.50.4mA VIN = 3V (Both inputs)VIN = 0V (Both inputs)Note 1: Switching times ensured by design.2: For V temperature range devices, the VIH (Min) limit is 2.0V.3: Package power dissipation is dependent on the copper pad area on the PCB.TC4426/TC4427/TC4428DS21422C-page 4  2004 Microchip Technology Inc.DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)TEMPERATURE CHARACTERISTICSElectrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V ≤ VDD ≤ 18V.Parameters Sym


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CU-Boulder ECEN 4517 - Dual High-Speed Power MOSFET Drivers

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