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CU-Boulder ECEN 4517 - N-Channel UltraFET Power MOSFETs

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©2001 Fairchild Semiconductor Corporation HUF75321P3, HUF75321S3S Rev. BHUF75321P3, HUF75321S3S35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETsThese N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75321.Features• 35A, 55V• Simulation Models- Temperature Compensated PSPICE® and SABER™ Models- Thermal Impedance SPICE and SABER Models Available on the WEB at: www.fairchildsemi.com• Peak Current vs Pulse Width Curve• UIS Rating Curve• Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”SymbolPackagingJEDEC TO-220AB JEDEC TO-263ABProduct reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.htmlFor severe environments, see our Automotive HUFA series.All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.Ordering InformationPART NUMBER PACKAGE BRANDHUF75321P3 TO-220AB 75321PHUF75321S3S TO-263AB 75321SNOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75321S3ST.DGSDRAINSOURCEGATEDRAIN (FLANGE)DRAIN (FLANGE)GATESOURCEData Sheet December 2001©2001 Fairchild Semiconductor Corporation HUF75321P3, HUF75321S3S Rev. BAbsolute Maximum RatingsTC = 25oC, Unless Otherwise Specified UNITSDrain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . VDSS55 VDrain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . VDGR55 VGate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS±20 VDrain CurrentContinuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDPulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM35Figure 4APulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Figures 6, 14, 15Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PDDerate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .930.625WW/oCOperating and Storage Temperature . . . . . . . . . . . . . . . . . .TJ, TSTG-55 to 175oCMaximum Temperature for SolderingLeads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . TLPackage Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . Tpkg300260oCoCCAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of thedevice at these or any other conditions above those indicated in the operational sections of this specification is not implied.NOTE:1. TJ = 25oC to 150oC.Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITSOFF STATE SPECIFICATIONSDrain to Source Breakdown Voltage BVDSSID = 250µA, VGS = 0V (Figure 11) 55 - - VZero Gate Voltage Drain Current IDSSVDS = 50V, VGS = 0V - - 1 µAVDS = 45V, VGS = 0V, TC = 150oC--250µAGate to Source Leakage Current IGSSVGS = ±20V - - ±100 nAON STATE SPECIFICATIONSGate to Source Threshold Voltage VGS(TH)VGS = VDS, ID = 250µA (Figure 10) 2 - 4 VDrain to Source On Resistance rDS(ON)ID = 35A, VGS = 10V (Figure 9) - 0.028 0.034 ΩTHERMAL SPECIFICATIONSThermal Resistance Junction to Case RθJC(Figure 3) - - 1.6oC/WThermal Resistance Junction to Ambient RθJATO-220, TO-263 - - 62oC/WSWITCHING SPECIFICATIONS (VGS = 10V)Turn-On Time tONVDD = 30V, ID ≅ 35A,RL = 0.86Ω, VGS = 10V,RGS = 25Ω--100nsTurn-On Delay Time td(ON)-11- nsRise Time tr-55- nsTurn-Off Delay Time td(OFF)-47- nsFall Time tf-66- nsTurn-Off Time tOFF--170nsGATE CHARGE SPECIFICATIONSTotal Gate Charge Qg(TOT)VGS = 0V to 20V VDD = 30V,ID ≅ 35A,RL = 0.86ΩIg(REF) = 1.0mA(Figure 13)-3644nCGate Charge at 10V Qg(10)VGS = 0V to 10V - 21 26 nCThreshold Gate Charge Qg(TH)VGS = 0V to 2V - 1.3 1.6 nCGate to Source Gate Charge Qgs-3-nCReverse Transfer Capacitance Qgd-9-nCHUF75321P3, HUF75321S3S©2001 Fairchild Semiconductor Corporation HUF75321P3, HUF75321S3S Rev. BCAPACITANCE SPECIFICATIONSInput Capacitance CISSVDS = 25V, VGS = 0V,f = 1MHz(Figure 12)- 680 - pFOutput Capacitance COSS- 270 - pFReverse Transfer Capacitance CRSS-60-pFElectrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITSSource to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITSSource to Drain Diode Voltage VSDISD = 35A - - 1.25 VReverse Recovery Time trrISD = 35A, dISD/dt = 100A/µs--59nsReverse Recovered Charge QRRISD = 35A, dISD/dt = 100A/µs--82nCTypical Performance Curves FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATUREFIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATUREFIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCETC, CASE TEMPERATURE (oC)POWER DISSIPATION MULTIPLIER00 25 50 75 100 1500.20.40.60.81.01.2125 175ID, DRAIN CURRENT (A)TC, CASE TEMPERATURE (oC)10203050 75 100 125 150 17502540t, RECTANGULAR PULSE DURATION (s)SINGLE PULSENOTES:DUTY FACTOR: D = t1/t2PEAK TJ = PDM x ZθJC x RθJC + TCPDMt1t2DUTY CYCLE - DESCENDING ORDER0.50.20.10.050.010.0210-410-310-210-110010110-50.1120.01ZθJC, NORMALIZEDTHERMAL IMPEDANCEHUF75321P3, HUF75321S3S©2001 Fairchild Semiconductor Corporation HUF75321P3, HUF75321S3S Rev. BFIGURE 4. PEAK CURRENT CAPABILITYFIGURE 5. FORWARD BIAS SAFE OPERATING AREANOTE: Refer to Fairchild Application Notes AN9321 and AN9322.FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITYFIGURE 7. SATURATION CHARACTERISTICS FIGURE 8. TRANSFER CHARACTERISTICSTypical Performance Curves (Continued)10110010-110-210-310-410-510100500TC = 25oCI = I25 175 - TC150FOR TEMPERATURESABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS:VGS = 10VIDM, PEAK CURRENT (A)t, PULSE WIDTH (s)TRANSCONDUCTANCEMAY LIMIT CURRENTIN THIS REGIONVGS = 20V1010030010 10011 200VDS, DRAIN TO SOURCE VOLTAGE


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CU-Boulder ECEN 4517 - N-Channel UltraFET Power MOSFETs

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