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TABLE OF CONTENTS1 Development and Characterization of Buffer Layers for Copper-Indium-Diselenide-Based Solar Cells1.1 Introduction1.2 Processing1.3 Characterization of CdS, (Cd,Zn)S, ZnS, and In(OH)xSy Buffer Layers1.4 Current-Voltage Characteristics of CIGS-Based Solar Cells with CdS, (Cd,Zn)S, ZnS, or In(OH)xSy Buffer Layers1.5 Conclusions1.6 References cited2 Growth and Characterization of Chemical-Bath-Deposition of ZnxCd1-xS Buffer Layers Grown on CIGS Absorbers2.1 Accomplishments2.2 Introduction2.3 Experimental2.4 Conclusions2.5 References Cited3 Effects of Buffer Layer Processing on CIGS Thin Films Characterized by the Dual-Beam Optical Modulation Technique3.1 Introduction3.2 Simplified Theory for Reflection-Mode DBOM3.3 Experimental Details3.4 Results and Discussion3.5 Conclusions3.6 References cited4 Epitaxial Growth of CuInSe2 at High Temperature4.1 Introduction4.2 Experimental Approach4.3 Composition, Phase and Surface Morphology of CIS Films4.4 XRD Analysis of CIS Films Grown at High Temperature4.5 TEM Analysis of CIS Films Grown at High Temperature4.6 Conclusions4.7 References cited5 Study of the Defect Structure of CGS by Photoluminescence Spectroscopy5.1 Introduction5.2 Theoretical Background5.3 Experimental Approach5.4 PL Measurements of Epitaxial CGS Films5.5 Conclusions5.6 References cited6 Investigation of Deep-Level Defects in Cu(In,Ga)Se2 Solar Cells by Deep-Level Transient Spectroscopy6.1 Introduction6.2 DLTS Principles and Experimental Procedures6.3 Results and Discussions6.4 Conclusions6.5 References cited7 Thermodynamic Modeling of the Isothermal 500°C Section of the Cu-In-Se System Using a Defect Model7.1 Introduction7.2 Experimental Phase Equilibria Data in the Cu-In-Se System7.3 Thermodynamic Modeling of Defect-free Cu-In-Se System at773 K7.4 Defect Model of Off-Stoichiometry α-CuInSe27.5 References cited8 Formation of α-CuInSe2 by Rapid Thermal Processing of a Stacked Binary Compound Bilayer8.1 Introduction8.2 Background8.3 Experimental apparatus8.4 Film Characterization8.5 Experimental Results and Discussions8.6 Conclusions8.7 References cited9 Investigation of Pulsed Non-Melt Laser Annealing on the Film Properties and Performance of Cu(In,Ga)Se2 Solar Cells.9.1 Accomplishments9.2 References cited10 Device Modeling and Simulation of CIGS Solar Cells10.1 Accomplishments10.2 Introduction10.3 Cell Structure and Material Parameters10.4 Effect of Graded Band-gaps on Cell Performance10.5 Comparison with Experimental Data10.6 Conclusions10.7 References Cited●A national laboratory of the U.S. Department of Energy Office of Energy Efficiency & Renewable Energy National Renewable Energy Laboratory Innovation for Our Energy Future Fundamental Materials Research Subcontract Report NREL/SR-520-40568 and Advanced Process September 2006 Development for Thin-Film CIS-Based Photovoltaics Final Technical Report 2 October 2001 — 30 September 2005 T.J. Anderson, S.S. Li, O.D. Crisalle, and V. Craciun University of Florida Gainesville, Florida NREL is operated by Midwest Research Institute Battelle Contract No. DE-AC36-99-GO10337Subcontract Report NREL/SR-520-40568September 2006 Fundamental Materials Research and Advanced Process Development for Thin-Film CIS-Based Photovoltaics Final Technical Report 2 October 2001 — 30 September 2005 T.J. Anderson, S.S. Li, O.D. Crisalle, and V. Craciun University of Florida Gainesville, FloridaNREL Technical Monitor: B. von Roedern Prepared under Subcontract No. ADJ-2-30630-13 National Renewable Energy Laboratory1617 Cole Boulevard, Golden, Colorado 80401-3393 303-275-3000 • www.nrel.govOperated for the U.S. Department of EnergyOffice of Energy Efficiency and Renewable Energyby Midwest Research Institute • Battelle Contract No. DE-AC36-99-GO10337This publication was reproduced from the best available copySubmitted by the subcontractor and received no editorial review at NRELNOTICEThis report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, orusefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service bytrade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement,recommendation, or favoring by the United States government or any agency thereof. The views andopinions of authors expressed herein do not necessarily state or reflect those of the United Statesgovernment or any agency thereof. Available electronically at http://www.osti.gov/bridgeAvailable for a processing fee to U.S. Department of Energyand its contractors, in paper, from: U.S. Department of EnergyOffice of Scientific and Technical Information P.O. Box 62 Oak Ridge, TN 37831-0062phone: 865.576.8401 fax: 865.576.5728 email: mailto:[email protected] for sale to the public, in paper, from: U.S. Department of Commerce National Technical Information Service 5285 Port Royal Road Springfield, VA 22161 phone: 800.553.6847 fax: 703.605.6900 email: [email protected] ordering:http://www.ntis.gov/ordering.htmPrinted on paper containing 100% postconsumer wasteTABLE OF CONTENTS 1 Development and Characterization of Buffer Layers for Copper-Indium- Diselenide-Based Solar Cells.............................................................................................1 1.1 Introduction..............................................................................................................1 1.2 Processing ................................................................................................................2 1.2.1 Chemical-Bath-Deposition Conditions....................................................... 2 1.2.2 Device Fabrication...................................................................................... 2 1.3 Characterization of CdS, (Cd,Zn)S, ZnS, and In(OH)xSy Buffer Layers ...............3 1.3.1 Compositional Analysis.............................................................................. 3 1.3.2 Optical Properties ....................................................................................... 7 1.4 Current-Voltage
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