UH ECE 6347 - ECE 6347 Chapter 2- pn Junction Diodes (22 pages)

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ECE 6347 Chapter 2- pn Junction Diodes



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ECE 6347 Chapter 2- pn Junction Diodes

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Lecture Notes


Pages:
22
School:
University of Houston
Course:
Ece 6347 - Advanced Topics in MOS Devices

Unformatted text preview:

Advanced MOS Devices Chapter 2 pn Junction Diodes Cullen College of Engineering Department of Electrical and Computer Engineering Dr Len Trombetta Spring 2011 Equilibrium Junction Diode Energy Ec EF q x Ei Ev x x po x x no Wile E Coyote Theorem It doesn t matter how high or steep the cliff is if Wile E Coyote goes over the edge he will fall This theorem suggests that the drift current will be about the same in forward and reverse bias as it is at equilibrium Only the diffusion current changes significantly ACME Blue Pointing Arrows Box of 25 pn Junction Diode with Applied Bias q Vo Va Ec EF qVa Ei Ev x x x po x x no Pierret Semiconductor Device Fundamentals Addison Wesley 1996 The forward and reverse bias regions are enhanced in the next slides Pierret Semiconductor Device Fundamentals Addison Wesley 1996 Roll off at high current is due to either series resistance or to high level injection effects The smaller slope at low current is due to carrier recombination in the depletion region which increases the total current The gradual increase in current before breakdown is due to the increase in size of the depletion region which allows more generation current Pierret Semiconductor Device Fundamentals Addison Wesley 1996 Tunnel Ohmic Contact tunneling electron EF n semiconductor



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