General Purpose Transistor(Isolated Dual Transistors)EMT1 / UMT1N / IMT1AEMT1 / UMT1N / IMT1A Transistors Rev.A 1/3 General Purpose Transistor (Isolated Dual Transistors) EMT1 / UMT1N / IMT1A zFeatures 1) Two 2SA1037AK chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. zStructure Epitaxial planar type PNP silicon transistor zEquivalent circuit EMT1 / UMT1N IMT1ATr2Tr1(3) (2) (1)(4) (5) (6)Tr2Tr1(4) (5) (6)(3) (2) (1) The following characteristics apply to both Tr1 and Tr2. zAbsolute maximum ratings (Ta = 25°C) Parameter SymbolVCBOVCEOVEBOICTjTstgPCEMT1, UMT1NIMT1ALimits−60−50−6−150150−55 to +150150 (TOTAL)300 (TOTAL)UnitVVVmA°C°CmW∗1∗2Collector-base voltageCollector-emitter voltageEmitter-base voltageCollector currentJunction temperatureStorage temperatureCollectorpower dissipation∗1 120mW per element must not be exceeded.∗2 200mW per element must not be exceeded. zExternal dimensions (Unit : mm) ROHM : EMT6EMT1ROHM : UMT6EIAJ : SC-88UMT1NROHM : SMT6EIAJ : SC-74IMT1AAbbreviated symbol : T1Abbreviated symbol : T1Abbreviated symbol : T10.221.21.6(1)(2)(5)(3)(6)(4)0.130.50.50.51.01.6Each lead has same dimensions0to0.1(6)2.01.30.90.150.70.1Min.2.10.650.21.25(1)0.65(4)(3)(2)(5)Each lead has same dimensions(6)(5)(4)0.3to0.60.150.31.10.80to0.1(3)2.81.61.92.90.95(2)0.95(1)Each lead has same dimensionsEMT1 / UMT1N / IMT1A Transistors Rev.A 2/3 zElectrical characteristics (Ta = 25°C) Parameter SymbolBVCBOBVCEOBVEBOICBOIEBOhFEVCE(sat)fTCobMin.−60−50−6−−120−−−−−−−−−−1404−−−−0.1−0.1560−0.5−5VIC = −50µAIC = −1mAIE = −50µAVCB = −60VVEB = −6VVCE = −6V, IC = −1mAVCE = −12V, IE = 2mA, f = 100MHzIC/IB = −50mA/−5mAVCB = −12V, IE = 0A, f = 1MHzVVµAµA−VMHzpFTyp. Max. Unit ConditionsCollector-base breakdown voltageCollector-emitter breakdown voltageEmitter-base breakdown voltageCollector cutoff currentEmitter cutoff currentDC current transfer ratioCollector-emitter saturation voltageTransition frequencyOutput capacitance zPackaging specifications Package TapingCodeUMT1NEMT1TypeIMT1ATR3000T2R8000−−−T1083000−−−Basic ordering unit (pieces) zElectrical characteristic curves -0.2COLLECTOR CURRENT : Ic (mA)-50-20-10-5-2-1-0.5-0.2-0.1-0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6VCE = −6VBASE TO EMITTER VOLTAGE : VBE (V)Fig.1 Grounded emitter propagation characteristicsTa = 100°C25°C−40°C -0.4-4-8-1.20-2-6-10-0.8 -1.6 -2.0-3.5µA-7.0-10.5-14.0-17.5-21.0-24.5-28.0-31.5IB = 0Ta = 25°C-35.0COLLECTOR CURRENT : IC (mA)COLLECTOR TO EMITTER VOLTAGE : VCE (V)Fig.2 Grounded emitter output characteristics ( Ι ) -40-80-5-3 -4-2-1-20-60-1000IB = 0Ta = 25°CCOLLECTOR CURRENT : IC (mA)COLLECTOR TO EMITTER VOLTAGE : VCE (V)Fig.3 Grounded emitter output characteristics ( ΙΙ )-50µA-100-150-200-250-500-450-400-350-300 50020010050-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100DC CURRENT GAIN : hFETa = 25°CVCE = -5V-3V-1VCOLLECTOR CURRENT : IC (mA)Fig.4 DC current gain vs. collector current ( Ι ) 50020010050-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100DC CURRENT GAIN : hFECOLLECTOR CURRENT : IC (mA)Fig.5 DC current gain vs. collectorcurrent ( ΙΙ )VCE = -6VTa = 100°C-40°C25°C -0.1-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100-1-0.5-0.2-0.05Ta = 25°CCOLLECTOR SATURATION VOLTAGE : VCE(sat) (V)COLLECTOR CURRENT : IC (mA)Fig.6 Collector-emitter saturation voltage vs. collector current ( Ι )IC/IB = 502010EMT1 / UMT1N / IMT1A Transistors Rev.A 3/3 -0.1-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100-1-0.5-0.2-0.05COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)COLLECTOR CURRENT : IC (mA)Fig.7 Collector-emitter saturation voltage vs. collector current ( ΙΙ )lC/lB = 10Ta = 100°C25°C-40°C 50 1000.5 2050100200500100012 510EMITTER CURRENT : IE (mA)TRANSITION FREQUENCY : fT (MHz)Fig.8 Gain bandwidth product vs. emitter currentTa = 25°CVCE = -12V COLLECTOR TO BASE VOLTAGE : VCB (V)EMITTER TO BASE VOLTAGE : VEB (V)COLLECTOR OUTPUT CAPACITANCE : Cob (pF)EMITTER INPUT CAPACITANCE : Cib (pF)Collector output capacitance vs.Emitter input capacitance vs.collector-base voltageemitter-base voltageFig.9-0.5 -202510-1 -2 -5 -1020CibCobTa = 25°Cf = 1MHzIE = 0AIC = 0AAppendix Appendix1-Rev1.1 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys).Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be separately delivered.Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuitsand deciding upon circuit constants in the set.Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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