©2000 Fairchild Semiconductor International Rev. A, February 2000TIP31 Series(TIP31/31A/31B/31C)NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25°C unless otherwise notedElectrical Characteristics TC=25°C unless otherwise noted* Pulse Test: PW≤300µs, Duty Cycle≤2%Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP31 : TIP31A : TIP31B : TIP31C 40 60 80100VVVV VCEO Collector-Emitter Voltage : TIP31 : TIP31A : TIP31B : TIP31C 40 60 80100VVVV VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 3 A ICP Collector Current (Pulse) 5 A IB Base Current 1 A PC Collector Dissipation (TC=25°C) 40 W PC Collector Dissipation (Ta=25°C) 2 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °CSymbol Parameter Test Condition Min. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage: TIP31: TIP31A: TIP31B: TIP31C IC = 30mA, IB = 0 40 60 80100VVVV ICEO Collector Cut-off Current: TIP31/31A: TIP31B/31C VCE = 30V, IB = 0 VCE = 60V, IB = 00.30.3mAmA ICES Collector Cut-off Current: TIP31: TIP31A: TIP31B: TIP31C VCE = 40V, VEB = 0 VCE = 60V, VEB = 0 VCE = 80V, VEB = 0 VCE = 100V, VEB = 0200200200200µAµAµAµA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1 mA hFE* DC Current Gain VCE = 4V, IC = 1A VCE = 4V, IC = 3A 25 10 50 VCE(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 375mA 1.2 V VBE(sat) * Base-Emitter Saturation Voltage VCE = 4V, IC = 3A 1.8 V fT Current Gain Bandwidth Product VCE = 10V, IC = 500mA 3.0 MHzTIP31 Series(TIP31/31A/31B/31C)Medium Power Linear Switching Applications• Complementary to TIP32/32A/32B/32C1.Base 2.Collector 3.Emitter1TO-220©2000 Fairchild Semiconductor InternationalTIP31 Series(TIP31/31A/31B/31C)Rev. A, February 2000Typical CharacteristicsFigure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation VoltageFigure 3. Safe Operating Area Figure 4. Power Derating1 10 100 1000 100001101001000VCE = 4V hFE, DC CURRENT GAINIC[mA], COLLECTOR CURRENT1 10 100 1000 1000010100100010000IC/IB = 10VCE(sat)VBE(sat) VBE(sat), VCE(sat)[mV], SATURATION VOLTAGEIC[mA], COLLECTOR CURRENT10 1000.1110100µsTIP31C VCEO MAX.TIP31B VCEO MAX.TIP31A VCEO MAX.TIP31 VCEO MAX.IC(MAX) (DC)IC(MAX) (PULSE)5ms1ms IC[A], COLLECTOR CURRENTVCE[V], COLLECTOR-EMITTER VOLTAGE0 25 50 75 100 125 150 175 20005101520253035404550 PC[W], POWER DISSIPATIONTC[oC], CASE TEMPERATURE4.50 ±0.209.90 ±0.201.52 ±0.100.80 ±0.102.40 ±0.2010.00 ±0.201.27 ±0.10ø3.60 ±0.10(8.70)2.80 ±0.1015.90 ±0.2010.08 ±0.3018.95MAX.(1.70)(3.70)(3.00)(1.46)(1.00)(45°)9.20 ±0.2013.08 ±0.201.30 ±0.101.30+0.10–0.050.50+0.10–0.052.54TYP[2.54 ±0.20]2.54TYP[2.54 ±0.20]TO-220Package Demensions©2000 Fairchild Semiconductor International Rev. A, February 2000TIP31 Series(TIP31/31A/31B/31C)Dimensions in Millimeters©2000 Fairchild Semiconductor International Rev. ETRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.ACEx™Bottomless™CoolFET™CROSSVOLT™E2CMOS™FACT™FACT Quiet Series™FAST®FASTr™GTO™HiSeC™ISOPLANAR™MICROWIRE™POP™PowerTrench®QFET™QS™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™UHC™VCX™DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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