CBETO-92CBEBCCSOT-223EPNP General Purpose AmplifierThis device is designed for general purpose amplifier and switchingapplications at collector currents of 10 µA to 100 mA.Absolute Maximum Ratings* TA = 25°C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.Symbol Parameter Value UnitsVCEOCollector-Emitter Voltage 40 VVCBOCollector-Base Voltage 40 VVEBOEmitter-Base Voltage 5.0 VICCollector Current - Continuous 200 mATJ, TstgOperating and Storage Junction Temperature Range -55 to +150°C 2001 Fairchild Semiconductor CorporationThermal Characteristics TA = 25°C unless otherwise notedSymbol Characteristic Max Units2N3906 *MMBT3906 **PZT3906PDTotal Device DissipationDerate above 25°C6255.03502.81,0008.0mWmW/°CRθJCThermal Resistance, Junction to Case 83.3°C/WRθJAThermal Resistance, Junction to Ambient 200 357 125°C/W*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.2N3906 MMBT3906SOT-23Mark: 2APZT39062N3906 / MMBT3906 / PZT3906NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.3) All voltages (V) and currents (A) are negative polarity for PNP transistors.2N3906/MMBT3906/PZT3906, Rev AElectrical Characteristics TA = 25°C unless otherwise notedSymbol Parameter Test Conditions Min Max UnitsOFF CHARACTERISTICSON CHARACTERISTICSSMALL SIGNAL CHARACTERISTICSSWITCHING CHARACTERISTICSV(BR)CEOCollector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 VV(BR)CBOCollector-Base Breakdown VoltageIC = 10 µA, IE = 040 VV(BR)EBOEmitter-Base Breakdown VoltageIE = 10 µA, IC = 05.0 VIBLBase Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nAICEXCollector Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nAhFEDC Current Gain * IC = 0.1 mA, VCE = 1.0 VIC = 1.0 mA, VCE = 1.0 VIC = 10 mA, VCE = 1.0 VIC = 50 mA, VCE = 1.0 VIC = 100 mA, VCE = 1.0 V60801006030300VCE(sat)Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mAIC = 50 mA, IB = 5.0 mA0.250.4VVVBE(sat)Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mAIC = 50 mA, IB = 5.0 mA0.65 0.850.95VVfTCurrent Gain - Bandwidth Product IC = 10 mA, VCE = 20 V,f = 100 MHz250 MHzCoboOutput Capacitance VCB = 5.0 V, IE = 0,f = 100 kHz4.5 pFCiboInput Capacitance VEB = 0.5 V, IC = 0,f = 100 kHz10.0 pFNF Noise FigureIC = 100 µA, VCE = 5.0 V,RS =1.0kΩ,f=10 Hz to 15.7 kHz4.0 dBtdDelay Time VCC = 3.0 V, VBE = 0.5 V, 35 nstrRise Time IC = 10 mA, IB1 = 1.0 mA 35 nstsStorage Time VCC = 3.0 V, IC = 10mA 225 nstfFall Time IB1 = IB2 = 1.0 mA 75 nsSpice ModelPNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4Xtf=6 Rb=10)*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.2N3906 / MMBT3906 / PZT3906PNP General Purpose Amplifier(continued)2N3906 / MMBT3906 / PZT3906Typical CharacteristicsCommon-Base Open Circuit Input and Output Capacitancevs Reverse Bias Voltage0.1 1 100246810REVERSE BIAS VOLTAGE (V)CAPACITANCE (pF)CoboC iboPNP General Purpose Amplifier(continued)Typical Pulsed Current Gainvs Collector Current0.1 0.2 0.5 1 2 5 10 20 50 1 0050100150200250I - COLLECTOR CURRENT (mA)h - TYPICAL PULSED CURRENT GAINCFE125 °C25 °C- 40 °CV = 1.0VCECollector-Emitter SaturationVoltage vs Collector Current11010020000.050.10.150.20.250.3I - COLLECTOR CURRENT (mA)V - COLLECTOR EMITTER VOLTAGE (V)CCESAT25 °C- 40 °C 125°Cβ= 10Base-Emitter SaturationVoltage vs Collector Current11010020000.20.40.60.81I - COLLECTOR CURRENT (mA)V - BASE EMITTER VOLTAGE (V)CBESATβ= 1025 °C- 40 °C 125 °CBase Emitter ON Voltage vsCollector Current0.1 1 10 2500.20.40.60.81I - COLLECTOR CURRENT (mA)V - BASE EMITTER ON VOLTAGE (V)CBE(ON)V = 1VCE 25 °C- 40 °C 125 °CCollector-Cutoff Currentvs Ambient Temperature25 50 75 100 1250.010.1110100T - AMBIE NT TEMP ERATURE ( C)I - COLLE CTOR CU RRENT (nA)ACBO°V = 25VCBPower Dissipation vsAmbient Temperature0 25 50 75 100 125 15000.250.50.751TEMPERATURE ( C)P - POWER DISSIPATION (W)DoSOT-223SOT-23TO-92Typical Characteristics (continued)Noise Figure vs Frequency0.1 1 10 1000123456f - FREQUENCY (kHz)NF - NOISE FIGURE (dB)I = 100 µA, R = 200ΩCV = 5.0VCESI = 100 µA, R = 2.0 kΩCSI = 1.0 mA, R = 200ΩCSNoise Figure vs Source Resistance0.1 1 10 100024681012R - SOURCE RESISTANCE ( )NF - NOISE FIGURE (dB)kΩI = 100 µACV = 5.0Vf = 1.0 kHzCEI = 1.0 mACSSwitching Timesvs Collector Current1 10 100110100500I - COLLECTOR CURRENT (mA)TIME (nS)I = I = trt sB1CB2Ic10tftdTurn On and Turn Off Timesvs Collector Current1 10 100110100500I - COLLECTOR CURRENT (mA)TIME (nS)I = I = t offB1 B2Ic10t onV = 0.5VBE(OFF) t I = ont offB1Ic102N3906 / MMBT3906 / PZT3906PNP General Purpose Amplifier(continued)2N3906 / MMBT3906 / PZT3906Typical Characteristics (continued)PNP General Purpose Amplifier(continued)Input Impedance0.1 1 100.1110I - COLLECTOR CURRENT (mA)h - INPUT IMPEDANCE (k )V = 10 VCE Cie f = 1.0 kHzΩOutput Admittance0.1 1 10101001000I - COLLECTOR CURRENT (mA)h - OUTPUT ADMITTANCE ( mhos)V = 10 VCE Coe f = 1.0 kHzµCurrent Gain0.1 1 101020501002005001000I - COLLECTOR CURRENT (mA)h - CURRENT GAINV = 10 VCE Cfe f = 1.0 kHzVoltage Feedback Ratio0.1 1 10110100I - COLLECTOR CURRENT (mA)h - VOLTAGE FEEDBACK RATIO (x10 )Cre_4TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. 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