Nanotechnology AddendumM. Saif IslamECE Department, UC Davis [email protected]. Sharma, T. I. Kamins, R. Stanley Williams HP Laboratories, Palo Alto, CA 94304Nanowire Integration Techniques for Massively Parallel & Manufacturable Electronic & Photonic DevicesCMOS Scaling: Critical IssuesDevice size and densityPhysically small featuresOperation with small featuresLimited number of electronsInterconnectionsCostMinimize expensive lithographySelf (or directed) assemblySimpler architecture Defect-tolerant architecture Moore's “Second Law”Cost of IC Fabrication FacilityYearIC FabricationFacility Cost ($B)1995 2005 20101101002000Moore's Law(Number of Electrons)YearElectrons per Device1988 20201996 2004 20121011031040.1102AnalogDigitalBasic devicephysicsWill Device Size Keep Shrinking? Carbon nanotubes110100100010000Transistor Size (nm)2040202020001980YearOptical LithographyExtreme UV??DNADNANanowiresENIAC circa 1947ENIAC circa 194715,000 vacuum tubes and weighs 30 tonsENIAC circa 1947ENIAC circa 1947Shrink volume by 108Improve power efficiency by 108iPAQ 2002iPAQ 2002Synthesis of Nanowires(Some Examples)Wang et. al.Kamins et. al.Yang et. al.Cao et. al.Busbee et. al.Gundiah et. al.Fukui et. al.2 µmIslam et. al.Samuelson et. al. Xia et. al.Lieber et. al.Sunkara et. al.Meyyappan et. al.Ag, Au, Zn, InP, ZnO, Si, Ge, Si-Ge, SiGeC, GaAs, ZnS, GaN, InGaAs, In2O3 and other materials ….Applications of Nanowires• Transistor, laser, LED• Electron emitter, AFM or STM probes• Interconnect for molecular electronics, decoders• Electrical sensor• Photonic crystals, test-bed for SERS for single molecule sensingMOS TransistorNWDielectricGateInterconnectCrossed NW FET decoders Chemical SensorBiological SensorOptical
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