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UMD ENEE 416 - Deep Reactive Ion Etching

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Deep Reactive Ion EtchingOverviewConcept of DRIEThe Bosch ProcessThe Bosch Process (cont’d)The Bosch Process (cont’d)The Cryogenic ProcessThe Cryogenic Process (cont’d)Bosch vs. CryogenicDRIE ApplicationsDeep Reactive Ion EtchingRaj BhattacharyaAlex ReisOverview Concept behind DRIE DRIE processes and technology Bosch process Cryogenic process DRIE applicationsConcept of DRIE Reactive ion etching (RIE) Etch gas is converted to plasma Electrode beneath wafer accelerates ions Ions etch substrate through both chemical and physical reactions DRIE Expands on RIE technology Can produce vertical sidewalls High aspect ratio High etch rate More precise than RIE; useful for micromachiningThe Bosch Process Developed in Germany in 1994 Alternates etching and passivation layer deposition – allows for high aspect ratio etching SF6 to etch, fluorocarbon to passivateSiPRAfter etch stepPassivation layer depositionAfter second etch stepThe Bosch Process (cont’d) Technology High-density plasma (HDP) is needed for high etch rates – inductively coupled plasma (ICP) systems produce the required density plasma at low pressureTypical ICP system used for Bosch processThe Bosch Process (cont’d) Technology (cont’d) Specific hardware High capacity gas pump – fast pumping is required to achieve high etch rates Fast response mass flow controllers – required to accommodate fast switching of injected gas Purely inductive plasma coupling – capacitive coupling causes variations in plasma density uniformityThe Cryogenic Process Uses ICP system to produce HDP One-step etching – etch gas and passivation gas are released at the same time SF6 to etch and SiOxFy to passivate Cryogenic temperatures (-110oto -130oC) are used to reduce the etch rate on the passivated sidewallsThe Cryogenic Process (cont’d) Technology Hardware Cryogenically cooled stage Mass flow controller for oxygen – very small amounts of oxygen can have significant effects on etch profileBosch vs. Cryogenic Bosch process advantages Can be conducted at room temperature Low temperature sensitivity Cryogenic process advantages Lower power requirements –less attack on mask and therefore higher selectivity Smooth sidewalls Less specialized hardware is requiredRough sidewall from Bosch processDRIE Applications Micromachining Bosch process Printer heads Accelerometer for air bags Cryogenic process Preferred for through-wafer etching Fluid transport – smooth


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UMD ENEE 416 - Deep Reactive Ion Etching

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