Reactive Ion Etching RIE and Deep Reactive Ion Etching DRIE Bryan Janaskie Shuk Yin Chuk ENEE 416 November 11 2007 Reactive Ion Etching RIE Dry Etching Method z Plasma etching combined with sputtering z Etch deepths of 10um z Etch rate of up to 100 um min z QuickTime and a TIFF LZW decompressor are needed to see this picture Etchant chemistries Isotropic F based plasma zAnisotropic Cl and BR z QuickTime and a TIFF LZW decompressor are needed to see this picture Advantages of RIE zHighly Anisotropic zEnhanced structure zHigh resolution QuickTime and a TIFF LZW decompressor are needed to see this picture Disadvantages of RIE zLow Etch Rate zLow level of selectivity zSurface damage z Chemical Physical balance Applications zSolar Cells zLaser diodes zMEMs Deep Reactive Ion Etching DRIE Dry etch micromachining method z High density plasma HDP z Inductively couple plasma ICP z Cryo Process z Bosch Process z Cryo Process Single step process z Etch gas and passivation gas are released at the same time z Done at cryogenic temperature 110 C z Bosch Process Developed by German company Robert Bosch in 1994 z Cycling two steps process altering between deposition and etch steps z 1st standard isotropic plasma etch z 2nd passivation layer deposition z Advantages of DRIE Vertical side walls z Fine resolution z High aspect ratio z High etch rate z High selectivity z Precise z Disadvantages of DRIE Use high plasma power z Single wafer at a time z Specialized hardware z Expensive z DRIE Applications Few micrometers to 0 5mm in MEMS z Sensors and actuators z Printer heads z Accelerometer for air bags z Capacitor in DRAM memory circuits z Questions
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