© Semiconductor Components Industries, LLC, 2006January, 2006 − Rev. 41 Publication Order Number:MMBV2101LT1/DMMBV2101LT1 Series,MV2105, MV2101, MV2109,LV2209Preferred Device Silicon Tuning DiodesThese devices are designed in popular plastic packages for the highvolume requirements of FM Radio and TV tuning and AFC, generalfrequency control and tuning applications. They provide solid−statereliability in replacement of mechanical tuning methods. Alsoavailable in a Surface Mount Package up to 33 pF.Features• High Q• Controlled and Uniform Tuning Ratio• Standard Capacitance Tolerance − 10%• Complete Typical Design Curves• Pb−Free Packages are AvailableMAXIMUM RATINGSRating Symbol Value UnitReverse Voltage VR30 VdcForward Current IF200 mAdcForward Power Dissipation@ TA = 25°C MMBV21xxDerate above 25°C@ TA = 25°C MV21xxDerate above 25°C LV2209PD2251.82802.8mWmW/°CmWmW/°CJunction Temperature TJ+150 °CStorage Temperature Range Tstg−55 to +150 °CMaximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (notnormal operating conditions) and are not valid simultaneously. If these limits areexceeded, device functional operation is not implied, damage may occur andreliability may be affected.ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)Characteristic Symbol Min Typ Max UnitReverse Breakdown Voltage(IR = 10 mAdc)MMBV21xx, MV21xxLV2209V(BR)R3025−−−−VdcReverse Voltage Leakage Current(VR = 25 Vdc, TA = 25°C)IR− − 0.1mAdcDiode Capacitance Temperature Co-efficient (VR = 4.0 Vdc, f = 1.0 MHz)TCC− 280 − ppm/°CPreferred devices are recommended choices for future useand best overall value.3Cathode1Anode2Cathode1AnodeSOT−23TO−9212312yyyyyyAYWW GGTO−92 (TO−226AC)CASE 182STYLE 1SOT−23 (TO−236)CASE 318−08STYLE 8yyyyyy = Specific Device CodeA = Assembly LocationY = YearWW = Work WeekG = Pb−Free Packagehttp://onsemi.comSee detailed ordering and shipping information in the packagedimensions section on page 2 of this data sheet.ORDERING INFORMATION6.8−100 pF, 30 VOLTSVOLTAGE VARIABLECAPACITANCE DIODES1xxx M GGxxx = Specific Device CodeM = Date Code*G = Pb−Free Package(Note: Microdot may be in either location)(Note: Microdot may be in either location)*Date Code orientation and/or overbar mayvary depending upon manufacturing location.MARKINGDIAGRAMSMMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209http://onsemi.com2CT, Diode CapacitanceVR = 4.0 Vdc, f = 1.0 MHzpFQ, Figure of MeritVR = 4.0 Vdc,f = 50 MHzTR, Tuning RatioC2/C30f = 1.0 MHzDevice Marking Package Shipping†Min Nom Max Typ Min Typ MaxMMBV2101LT1 M4G SOT−23 3,000 / Tape & Reel 6.1 6.8 7.5 450 2.5 2.7 3.2MMBV2101LT1G M4G SOT−23(Pb−Free)3,000 / Tape & Reel 6.1 6.8 7.5 450 2.5 2.7 3.2MMBV2101L M4G SOT−23 Bulk (Note 1) 6.1 6.8 7.5 450 2.5 2.7 3.2MV2101 MV2101 TO−92 1,000 per Box 6.1 6.8 7.5 450 2.5 2.7 3.2MV2101G MV2101 TO−92(Pb−Free)1,000 per Box 6.1 6.8 7.5 450 2.5 2.7 3.2MMBV2103LT1 4H SOT−23 3,000 / Tape & Reel 9.0 10 11 400 2.5 2.9 3.2MMBV2105LT1 4U SOT−23 3,000 / Tape & Reel 13.5 15 16.5 400 2.5 2.9 3.2MMBV2105LT1G 4U SOT−23(Pb−Free)3,000 / Tape & Reel 13.5 15 16.5 400 2.5 2.9 3.2MMBV2105L 4U SOT−23 Bulk (Note 1) 13.5 15 16.5 400 2.5 2.9 3.2MV2105 MV2105 TO−92 1,000 per Box 13.5 15 16.5 400 2.5 2.9 3.2MV2105G MV2105 TO−92(Pb−Free)1,000 per Box 13.5 15 16.5 400 2.5 2.9 3.2MMBV2107LT1 4W SOT−23 3,000 / Tape & Reel 19.8 22 24.2 350 2.5 2.9 3.2MMBV2107LT1G 4W SOT−23(Pb−Free)3,000 / Tape & Reel 19.8 22 24.2 350 2.5 2.9 3.2MMBV2107L 4W SOT−23 Bulk (Note 1) 19.8 22 24.2 350 2.5 2.9 3.2MMBV2108LT1 4X SOT−23 3,000 / Tape & Reel 24.3 27 29.7 300 2.5 3.0 3.2MMBV2108LT1G 4X SOT−23(Pb−Free)3,000 / Tape & Reel 24.3 27 29.7 300 2.5 3.0 3.2LV2209 LV2209 TO−92 1,000 per Box 29.7 33 36.3 200 2.5 3.0 3.2MMBV2109LT1 4J SOT−23 3,000 / Tape & Reel 29.7 33 36.3 200 2.5 3.0 3.2MMBV2109LT1G 4J SOT−23(Pb−Free)3,000 / Tape & Reel 29.7 33 36.3 200 2.5 3.0 3.2MMBV2109L 4J SOT−23 Bulk (Note 1) 29.7 33 36.3 200 2.5 3.0 3.2MV2109 MV2109 TO−92 1,000 per Box 29.7 33 36.3 200 2.5 3.0 3.2MV2109G MV2109 TO−92(Pb−Free)1,000 per Box 29.7 33 36.3 200 2.5 3.0 3.2†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecification Brochure, BRD8011/D.1. MMBV2101LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop the “T1”suffix when ordering any of these devices in bulk.PARAMETER TEST METHODS1. CT, DIODE CAPACITANCE(CT = CC + CJ). CT is measured at 1.0 MHz using a capacitancebridge (Boonton Electronics Model 75A or equivalent).2. TR, TUNING RATIOTR is the ratio of CT measured at 2.0 Vdc divided by CTmeasured at 30 Vdc.3. Q, FIGURE OF MERITQ is calculated by taking the G and C readings of an admittancebridge at the specified frequency and substituting in thefollowing equations:Q +2pfCG(Boonton Electronics Model 33AS8 or equivalent). Use LeadLength [ 1/16″.4. TCC, DIODE CAPACITANCE TEMPERATURECOEFFICIENTTCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0MHz, TA = −65°C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA= +85°C in the following equation, which defines TCC:TCC+ŤCT() 85°C) – CT(–65°C)85 ) 65Ť·106CT(25°C)Accuracy limited by measurement of CT to ±0.1 pF.MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209http://onsemi.com3TYPICAL DEVICE CHARACTERISTICSFigure 1. Diode Capacitance versus Reverse VoltageFigure 2. Normalized Diode Capacitance versusJunction TemperatureFigure 3. Reverse Current versus Reverse BiasVoltageFigure 4. Figure of Merit versus Reverse VoltageVR, REVERSE VOLTAGE (VOLTS)1.0 2.00.2 1030201.02.05.010100050201005005.00.50.1200CT, DIODE CAPACITANCE (pF)TA = 25°Cf = 1.0 MHzMMBV2109LT1/MV21091.0401.0301.0201.0101.0000.9900.980TJ, JUNCTION TEMPERATURE (°C)+125−75 −25 0 +25 +50−50 +75NORMALIZED DIODE CAPACITANCE+1000.9700.960VR = 2.0 VdcVR = 4.0 VdcVR = 30 Vdc1005020105.00.01VR, REVERSE VOLTAGE (VOLTS)5.0 10 2015 25I30, REVERSE CURRENT (nA)R0.020.050.100.200.501.02.0TA = 125°CTA = 75°CTA = 25°C1002005001000500020001.0 2.0 5.0 7.0103.020VR, REVERSE VOLTAGE (VOLTS)Q, FIGURE OF MERIT20001000200500300100f, FREQUENCY (MHz)1030 50 70Q, FIGURE OF MERIT10030005030201020 200 250TA = 25°Cf = 50 MHzTA = 25°CVR = 4.0 VdcFigure 5. Figure of Merit versus