UCSB ECE 145b - Silicon Tuning Diodes (5 pages)

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Silicon Tuning Diodes



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Silicon Tuning Diodes

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Pages:
5
School:
University of California, Santa Barbara
Course:
Ece 145b - Communications Electronics II
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MMBV2101LT1 Series MV2105 MV2101 MV2109 LV2209 Preferred Device Silicon Tuning Diodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC general frequency control and tuning applications They provide solid state reliability in replacement of mechanical tuning methods Also available in a Surface Mount Package up to 33 pF http onsemi com 6 8 100 pF 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODES Features High Q Controlled and Uniform Tuning Ratio Standard Capacitance Tolerance 10 Complete Typical Design Curves Pb Free Packages are Available 3 Cathode SOT 23 2 Cathode MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 30 Vdc Forward Current IF 200 mAdc Forward Power Dissipation TA 25 C MMBV21xx Derate above 25 C PD TA 25 C Derate above 25 C 1 Anode TO 92 MARKING DIAGRAMS 3 1 MV21xx LV2209 225 1 8 mW mW C 280 2 8 mW mW C Junction Temperature TJ 150 C Storage Temperature Range Tstg 55 to 150 C Maximum ratings are those values beyond which device damage can occur Maximum ratings applied to the device are individual stress limit values not normal operating conditions and are not valid simultaneously If these limits are exceeded device functional operation is not implied damage may occur and reliability may be affected 2 SOT 23 TO 236 CASE 318 08 STYLE 8 Characteristic Symbol V BR R Typ Max Unit Vdc 30 25 IR 0 1 mAdc TCC 280 ppm C Reverse Voltage Leakage Current VR 25 Vdc TA 25 C Diode Capacitance Temperature Coefficient VR 4 0 Vdc f 1 0 MHz Min xxx M G G 1 xxx Specific Device Code M Date Code G Pb Free Package Note Microdot may be in either location Date Code orientation and or overbar may vary depending upon manufacturing location ELECTRICAL CHARACTERISTICS TA 25 C unless otherwise noted Reverse Breakdown Voltage IR 10 mAdc MMBV21xx MV21xx LV2209 1 Anode 1 2 TO 92 TO 226AC CASE 182 STYLE 1 yy yyyy AYWW G G yyyyyy Specific Device Code A Assembly Location Y Year WW Work Week G Pb Free Package Note Microdot may be in either location ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet Preferred devices are recommended choices for future use and best overall value Semiconductor Components Industries LLC 2006 January 2006 Rev 4 1 Publication Order Number MMBV2101LT1 D MMBV2101LT1 Series MV2105 MV2101 MV2109 LV2209 CT Diode Capacitance VR 4 0 Vdc f 1 0 MHz pF Q Figure of Merit VR 4 0 Vdc f 50 MHz TR Tuning Ratio C2 C30 f 1 0 MHz Marking Package Shipping Min Nom Max Typ Min Typ Max MMBV2101LT1 M4G SOT 23 3 000 Tape Reel 6 1 6 8 7 5 450 2 5 2 7 3 2 MMBV2101LT1G M4G SOT 23 Pb Free 3 000 Tape Reel 6 1 6 8 7 5 450 2 5 2 7 3 2 MMBV2101L M4G SOT 23 Bulk Note 1 6 1 6 8 7 5 450 2 5 2 7 3 2 MV2101 MV2101 TO 92 1 000 per Box 6 1 6 8 7 5 450 2 5 2 7 3 2 MV2101G MV2101 TO 92 Pb Free 1 000 per Box 6 1 6 8 7 5 450 2 5 2 7 3 2 MMBV2103LT1 4H SOT 23 3 000 Tape Reel 9 0 10 11 400 2 5 2 9 3 2 MMBV2105LT1 4U SOT 23 3 000 Tape Reel 13 5 15 16 5 400 2 5 2 9 3 2 MMBV2105LT1G 4U SOT 23 Pb Free 3 000 Tape Reel 13 5 15 16 5 400 2 5 2 9 3 2 Device MMBV2105L 4U SOT 23 Bulk Note 1 13 5 15 16 5 400 2 5 2 9 3 2 MV2105 MV2105 TO 92 1 000 per Box 13 5 15 16 5 400 2 5 2 9 3 2 MV2105G MV2105 TO 92 Pb Free 1 000 per Box 13 5 15 16 5 400 2 5 2 9 3 2 MMBV2107LT1 4W SOT 23 3 000 Tape Reel 19 8 22 24 2 350 2 5 2 9 3 2 MMBV2107LT1G 4W SOT 23 Pb Free 3 000 Tape Reel 19 8 22 24 2 350 2 5 2 9 3 2 MMBV2107L 4W SOT 23 Bulk Note 1 19 8 22 24 2 350 2 5 2 9 3 2 MMBV2108LT1 4X SOT 23 3 000 Tape Reel 24 3 27 29 7 300 2 5 3 0 3 2 MMBV2108LT1G 4X SOT 23 Pb Free 3 000 Tape Reel 24 3 27 29 7 300 2 5 3 0 3 2 LV2209 TO 92 1 000 per Box 29 7 33 36 3 200 2 5 3 0 3 2 MMBV2109LT1 4J SOT 23 3 000 Tape Reel 29 7 33 36 3 200 2 5 3 0 3 2 MMBV2109LT1G 4J SOT 23 Pb Free 3 000 Tape Reel 29 7 33 36 3 200 2 5 3 0 3 2 LV2209 MMBV2109L 4J SOT 23 Bulk Note 1 29 7 33 36 3 200 2 5 3 0 3 2 MV2109 MV2109 TO 92 1 000 per Box 29 7 33 36 3 200 2 5 3 0 3 2 MV2109G MV2109 TO 92 Pb Free 1 000 per Box 29 7 33 36 3 200 2 5 3 0 3 2 For information on tape and reel specifications including part orientation and tape sizes please refer to our Tape and Reel Packaging Specification Brochure BRD8011 D 1 MMBV2101LT1 MMBV2105LT1 MMBV2107LT1 thru MMBV2109LT1 are also available in bulk Use the device title and drop the T1 suffix when ordering any of these devices in bulk PARAMETER TEST METHODS 1 CT DIODE CAPACITANCE Boonton Electronics Model 33AS8 or equivalent Use Lead Length 1 16 CT CC CJ CT is measured at 1 0 MHz using a capacitance bridge Boonton Electronics Model 75A or equivalent 4 TCC DIODE CAPACITANCE TEMPERATURE COEFFICIENT 2 TR TUNING RATIO TCC is guaranteed by comparing CT at VR 4 0 Vdc f 1 0 MHz TA 65 C with CT at VR 4 0 Vdc f 1 0 MHz TA 85 C in the following equation which defines TCC TR is the ratio of CT measured at 2 0 Vdc divided by CT measured at 30 Vdc 3 Q FIGURE OF MERIT Q is calculated by taking the G and C readings of an admittance bridge at the specified frequency and substituting in the following equations TCC CT 65 C 106 CT 85 C 85 65 C 25 C T Accuracy limited by measurement of CT to 0 1 pF Q 2pfC G http onsemi com 2 MMBV2101LT1 Series MV2105 MV2101 MV2109 LV2209 TYPICAL DEVICE CHARACTERISTICS 1000 TA 25 C f 1 0 MHz C T DIODE CAPACITANCE pF 500 200 100 MMBV2109LT1 MV2109 50 MMBV2105LT1 MV2105 20 MMBV2101LT1 MV2101 10 5 0 2 0 1 0 0 1 0 2 0 3 0 5 1 0 2 0 5 0 3 0 20 10 30 VR REVERSE VOLTAGE VOLTS Figure 1 Diode …


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