Hieu Do Dr. Zhou EE 136TopicBase drive requirements for high-voltage BJTProportional drive circuit for BJTAnti-saturation technique of high-voltage transistorReducing transistor stressSimulationSimple drive circuitryHieu DoDr. ZhouEE 136Topic•Base drive requirements for high-voltage BJT•Proportional drive circuit for BJT•Anti-saturation technique of high-voltage transistor•Reducing transistor stressBase drive requirements for high-voltage BJTProportional drive circuit for BJTAnti-saturation technique of high-voltage transistorReducing transistor stressSimulationTWTVclamp.V [V] Vs.V [V] t [s] 0.8k-0.1k00.1k0.2k0.3k0.4k0.5k0.6k0.7k0 4m0.5m 1m 1.5m 2m 2.5m 3m 3.5m+ V+ V+ VTWT1RloadC1E1300D1BJT1VclampL1VsVc1L1 := 500uL2 := 56u1u200u 567Vclamp.V [V] Vs.V [V] t [s] 0.8k-0.1k00.1k0.2k0.3k0.4k0.5k0.6k0.7k3m 3m3m 3m 3m 3m 3m 3m 3m 3m 3mVclamp.V [V] Vs.V [V] t [s] 0.6k-0.2k0-0.1k0.1k0.2k0.3k0.4k0.5k0 4m0.5m 1m 1.5m 2m 2.5m 3m 3.5mVclamp.V [V] Vs.V [V] t [s] 0.6k-0.2k0-0.1k0.1k0.2k0.3k0.4k0.5k3m 3m3m 3m 3m 3m 3m 3m 3m 3m 3mTWT+ V+ V+ V+ VTWT1Rload5C167200uE1300D1D2C2.01uR1.1kVclampL1VsVc1Vc2BJT11uL1 := 500uL2 := 56uSimple drive circuitryNPN61.IB t [s] 3-10-0.50.511.522.59.5u 15u10u 11u 11u 12u 12u 13u 13u 14u 14uNPN61E2EMF := 30L11mE1TPERIO := 10uAMPL :=
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