VLSI Technology TrendsECE4420JAD public.itrs.orgOutline• Introduction/Performance Metrics• ITRS Definitions• Physical Technology Trends• Clock Frequency and Power Trends• Intel’s 90nm Logic Process• Future Opportunities• DiscussionMoore’s LawNumber of transistors doubles every 18 months!!Smaller Transistor size reduces the Cost-Per-Function!1101001000100001995 2000 2005 2010 2015Year# of transistors per chip (M/chip)•ITRS partially uses historicaltrends to PROJECT theFUTURE of theSemiconductor Industry• FYI: Intel announced thatthey has reach 1.7 billion withItanium processorITRS Future Trends/ProjectionsGigascale Integration (GSI) = 1 billion transistors per chip(public.itrs.net)Technology GenerationDefinitionTraditionally this has been every three years (1994 Roadmap)Mark Bohr, Intel Fellow, 2002 Press Release www.intel.com(Intel has new technology generation every two years)Long-Channel MOSFETApproximationIdsVdsDrainSourceGateVdd2)(2tddoxrodriveVVLWtI !=""µVdsIdsVgs=VddVt <Vgs<VddVgs< Vt Drive CurrentNot include: 1) Channel Length Modulation2) Mobility degradation3) Drain Induced Barrier Lowering (DIBL)4) etc…Approximate Drive CurrentMetricn+ n+pSource DrainGateM(etal) O(xide)S(emiconductor)toxL F22)(2)(2ddoxrotddoxrodriveVLWtVVLWtI!!µ!!µ"#=VddConstant-Field ScalingMOSFET device parametersScaling factor (s>1)Doping concentration (Na, Nd)sVoltage (V)1/sGate Oxide Thickness (tox) 1/sChannel Length (L)1/sTransistor Width (W)1/sJunction Depth (xj)1/s22)(2)(2ddoxrotddoxrodriveVLWtVVLWtI!!µ!!µ"#=Electric Field (E)Scaling factor (s>1)1Carrier Velocity (v = µE)1Depletion Layer Width1/sCapacitance (C=εA/tox)1/sInversion layer charge density (Qi)1Current (drift)1/sChannel Resistance (R)1Constant-Field ScalingDevice BehaviorMOSFET device parametersConstant-Field ScalingCircuit BehaviorCircuit Delay Time(τ ~ CV/I)1/sPower Dissipation per circuit (~VI)1/s2Power-Delay Product per circuit (P x τ)1/s3Circuit Density ( µ 1/A ) s2Power Density (P/A)1MOSFET device parametersScaling factor (s>1)driveICVdtdVCIdsgds=)(2)(222ddtddoxddoxdriveddVLVVLWCWLVCIVCµµ!"#==Transistor Performance Metric!!=====dddsdsVVVdsdsgttdVICdt001"( )!!"#$$%&+'(+=+=ddoxwddtddoxddwddoxdsddwgWVCLCVLVVLWCVCWLVCIVCCµµµ)2)(2)(222CgdriveICVWith Extra Wire Capacitance??Cw Rwire=!WH!Lwire Cwire=!r!oWH!Lwire != RwireCwire="r"o#Lwire2H#H"Global Wire Performance MetricWHρHεTransistor and InterconnectPerformance Metrics)(22ddVLµ!!"#$$%&+ddoxwddWVCLCVLµµ2)(222wireLHHW!"!"Smaller = Faster!Smaller = No Improvement!….Or slower!!Transistor only Transistor plus local wire Global long wireITRS DefinitionWhat is the ITRS?“It [ITRS] presents an industry-wide consensus on the‘best current estimate’of the industry’s research anddevelopment needs out to a 15-year horizon. As such itprovides a guide to the efforts of companies, researchorganizations, and governments. The ITRS hasimproved the quality of R&D investment decisions madeat all levels and has helped channel research efforts toareas that truly need research breakthroughs.” (ITRSExecutive Summary)Single Most Important Trend...“Of course, the most frequently cited trend is inintegration level, which is usually expressed as Moore’sLaw (the number of components per chip doubles every 18months). The most significant for society is thedecreasing cost-per-function, which has led to significantimprovements of productivity and quality of life throughproliferation of computers, electronics communication,and consumer electronics.” (ITRS, 2002 ExecutiveSummary)Average reduction is 25% per year!Improvement Trends Enabled byFeature ScalingKey Lithographic CharacteristicsScaling factor is x0.7 per technology generationHalf Pitch (=Pitch/2) DefinitionITRS Accerleration1999 ITRSClock Frequency(MHz)Power (W)Ion (uA/um)Ioff (pA/um)295215049016417115811005e42004 ITRSCan ITRS predict the future?Technology Trends1999 ITRS and INTELMinimum Lithographic Feature Size Projections0204060801001201401601802001999 2002 2005 2008 2011 2014YearDrawn and Effective Channel LengthProject Drawn ChannelLength (nm)Effective Channel Length(nm)!!"#$$%&+ddoxwddWVCLCVLµµ2)(22Minimum Feature Size Decreases 30% every technology generation!Minimum Feature Size ProjectionsDRAM 1/2 PitchMPU Gate Length11010010002004 2007 2010 2013 2016YearCharacteristic Length [nm]DRAM 1/2 Pitch OR MPU 1/2 poly pitchPrinted Gate LengthPhysical Gate LengthMPU Metal 1 1/2 PitchMinimum Feature Size30% Reduction every 3 years!Remember gate length is smaller!Mark Bohr, Intel Fellow, 2002 Press Release www.intel.com00.511.522.531999 2002 2005 2008 2011 2014YearEffective Oxide Thickness [nm]Equivalent Gate OxideThickness Projections!!"#$$%&+ddoxwoxddWVCLtVLµ'µ2)(22No known solutionsQuantum Effects!Mark Bohr, Intel Fellow, 2002 Press Release www.intel.comIntel is ahead!2004 ITRS GateThickness/Leakage00.20.40.60.811.21.41.61.80 20 40 60 80 100Technology GenerationGate Thickness (nm) OR Gate Leakage (uA/um)Equiv. Physical Oxide Thickness MPUGate Dielectric Leakage 100oC HP/MPU(uA/um)No known solutionsGate Leakage on the RISE!Intel Technology Journal Q3 1998 Thompson, Packan and Bohr00.20.40.60.811.21.41.61.821999 2002 2005 2008 2011 2014YearSupply Voltage [Volts]Supply Voltage Scaling!!"#$$%&+ddoxwddWVCLCVLµµ2)(22WHY SCALE THIS?Mark Bohr, Intel Fellow, 2002 Press Release www.intel.comIntel...050010001500200025001999 2002 2005 2008 2011 2014YearDrive Current per unit width (Idrive/W) (microA/micron)Drive Current Projections(microA/micron)ITRS ProjectionsITRS Drive Current perTransistor Width??22)(2)(2ddoxrotddoxrodriveVLWtVVLWtI!!µ!!µ"#=Mark Bohr, Intel Fellow, 2002 Press Release www.intel.comIntel...2004 ITRS Drive Current(uA/um)00.511.522.530 20 40 60 80 100Technology GenerationDrive Current (Ion) [mA/um]Old ITRS Values02E-124E-126E-128E-121E-111.2E-111999 2002 2005 2008 2011 2014YearCV/I metric [secs]Transistor OnlyTransistor plus Local Interconnect ITRS Values!!"#$$%&+ddoxwddWVCLCVLµµ2)(22CV/I Metric ProjectionsAssume Lwire = 30F!!0.0020.0040.0060.0080.00100.00120.00140.00160.001999 2002 2005 2008 2011 2014Year Global RC Charging Time/ CV/I gate delay metricGlobal Interconnect 1mm : W=F : AluminumGlobal Interconnect DelayTrends for Lwire=1mm !r!o"F2Lwire2What are we going to do! Interconnects don’t scale!Material Changes will help!0.0020.0040.0060.0080.00100.00120.00140.00160.001999 2002 2005 2008 2011 2014YearGlobal RC Charging Time/ (CV/I) gate delay